Masks for 0.25-um lithography

Wilhelm Maurer; Donald J. Samuels

doi:10.1117/12.191936

3 November 1994 Masks for 0.25-μm lithography

Wilhelm Maurer, Donald J. Samuels

Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191936
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan

Abstract

Specifications for photomasks to be used to print 0.25 micrometers structures have to be much tighter than mask specifications for today's most advanced 0.5 micrometers technologies. As optical lithography works closer to its resolution limit, line shortening, increased susceptibility to errors in mask manufacturing, and enhanced printing of mask defects has to be taken into account. Phase shift masks improve the process window of lithography and provide therefore more room for selective mask biasing. However, the additional parameters inherent to particular phase shift mask types (phase shift, transmission uniformity for attenuated phase shift masks, rim uniformity for rim-phase shift masks) contribute to the total error budget and need therefore to be controlled to very tight tolerances, too.

Citation Download Citation

Wilhelm Maurer and Donald J. Samuels "Masks for 0.25-μm lithography", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191936

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available