FDSOI transistor-based uncooled microbolometer: demonstration of a 12µm pixel sensitive to IR flux

A. Albouy; G. Dumont; M. Le Cocq; C. Vialle; R. M. R. Kubica; L. Carle; V. Goudon; T. Perrillat-Bottonet; J. J. Yon; P. Leduc

doi:10.1117/12.3013449

7 June 2024 FDSOI transistor-based uncooled microbolometer: demonstration of a 12μm pixel sensitive to IR flux

A. Albouy, G. Dumont, M. Le Cocq, C. Vialle, R. M. R. Kubica, L. Carle, V. Goudon, T. Perrillat-Bottonet, J. J. Yon, P. Leduc

Author Affiliations +

Proceedings Volume 13046, Infrared Technology and Applications L; 130460Z (2024) https://doi.org/10.1117/12.3013449
Event: SPIE Defense + Commercial Sensing, 2024, National Harbor, Maryland, United States

Abstract

As uncooled microbolometer market grows, there is a need for cost-reduced detectors with the right performance level for the considered market. CMOS devices as transistors or diodes are therefore promising alternatives to standard thermistor materials of microbolometers. In this context CEA LETI developed a 12μm pitch proof of concept of a FDSOI transistor-based microbolometer suspended pixel. The suspended pixel is realized with a 3D integration technological process. This proof of concept aims to validate the technological process by demonstrating pixel capacity to be sensitive to the infrared ux. This work reports details on technological process, electro-optical measurements and discussion on achievable performances.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

A. Albouy, G. Dumont, M. Le Cocq, C. Vialle, R. M. R. Kubica, L. Carle, V. Goudon, T. Perrillat-Bottonet, J. J. Yon, and P. Leduc "FDSOI transistor-based uncooled microbolometer: demonstration of a 12μm pixel sensitive to IR flux", Proc. SPIE 13046, Infrared Technology and Applications L, 130460Z (7 June 2024); https://doi.org/10.1117/12.3013449

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