Presentation + Paper
14 March 2023 GaN-on-silicon nanowire technology for microLED devices.
Pierre Tchoulfian, Ulrich Steegmueller, Benoît Amstatt, Markus Broell, Philippe Gilet
Author Affiliations +
Abstract
GaN-on-Silicon nanowire technology is promising for several display applications. Since one of the microLED display major challenges is to drastically reduce the cost, the possibility to downsize the microLED is paramount. Aledia has developed a nanowire microLED technology on large Si wafers which keeps the same blue emission efficiency for ⪅2μm size devices containing only 1 NW as for larger devices containing up to few hundreds of NWs. A RGB integrated pixel relying on this technology is presented where quantum dots are used for green and red color conversion. Another nanowire microLED concept for AR/MR applications is also presented where light emission directivity and pixel size downsizing are mandatory.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Tchoulfian, Ulrich Steegmueller, Benoît Amstatt, Markus Broell, and Philippe Gilet "GaN-on-silicon nanowire technology for microLED devices.", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 1244109 (14 March 2023); https://doi.org/10.1117/12.2652105
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KEYWORDS
Nanowires

RGB color model

Nanotechnology

Electroluminescence

Quantum dot emission

Semiconducting wafers

Light emitting diodes

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