Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers

A. Nishikawa; A. Loesing; B. Slischka

doi:10.1117/12.2511390

1 March 2019 Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers

A. Nishikawa, A. Loesing, B. Slischka

Author Affiliations +

Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications; 109400Z (2019) https://doi.org/10.1117/12.2511390
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is not wide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well-controlled strain by precise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.

Citation Download Citation

A. Nishikawa, A. Loesing, and B. Slischka "Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400Z (1 March 2019); https://doi.org/10.1117/12.2511390

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