Track based techniques to improve high-resolution EUV patterning defectivity

Naoki Shibata; Lior Huli; Corey Lemley; Dave Hetzer; Eric Liu; Ko Akiteru; Shinichiro Kawakami; Karen Petrillo; Luciana Meli; Nelson Felix; Cody Murray; Alex Hubbard; Rick Johnson

doi:10.1117/12.2501668

19 October 2018 Track based techniques to improve high-resolution EUV patterning defectivity

Naoki Shibata, Lior Huli, Corey Lemley, Dave Hetzer, Eric Liu, Ko Akiteru, Shinichiro Kawakami, Karen Petrillo, Luciana Meli, Nelson Felix, Cody Murray, Alex Hubbard, Rick Johnson

Author Affiliations +

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 1080922 (2018) https://doi.org/10.1117/12.2501668
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling the second generation of EUV patterning, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse, and eliminate film-related defects. In addition, CD uniformity improvements must be continued to meet patterning performance requirements. Tokyo Electron Limited (TELTM) and IBM Corporation are continuously developing manufacturing quality processes for EUV.

Citation Download Citation

Naoki Shibata, Lior Huli, Corey Lemley, Dave Hetzer, Eric Liu, Ko Akiteru, Shinichiro Kawakami, Karen Petrillo, Luciana Meli, Nelson Felix, Cody Murray, Alex Hubbard, and Rick Johnson "Track based techniques to improve high-resolution EUV patterning defectivity", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080922 (19 October 2018); https://doi.org/10.1117/12.2501668

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