Employing MoS2 as a saturable absorber, We firstly demonstrated a passively Q-switched mode-locked (QML) Tm,Ho:CaYAlO4 laser. A tunable wavelength Ti:sapphire laser is used as the pumping source, and the continuous operation threshold of the Tm,Ho:CaYAlO4 laser is as low as 191 mw. When the absorption pumping power reached 1210 mW, the Tm,Ho:CaYAlO4 laser will entered a stable Q-switched mode-locked operation state, further increasing the pump power to 2.6w, the maximum output power of the laser is 216 mW, which corresponds a slope efficiency of 9.32% at the central wavelength of 2089 nm. In this case, the modulation depth is close to 100%. the experiments show the potential application of MoS2 in mode-locked operation at 2 micron band.
Employing double wall carbon nanotube (DWCNT) grown by vertical growth method as saturable absorbe(SA)r, and we realize a watt-level Q-switched mode-locking operation in an all-solid-state Tm,Ho:LiLuF4 (Tm,Ho:LLF) laser with high power. When the pump power is greater than 7.76 W, the laser operation enters a stable Q-switched mode-locking state. When the pump power is increased to 20 W, the maximum output power is 1480 mW under 9% output coupled mirror. In this case, the central wavelength is 1882 nm and the repetition frequency is 55.55MHz, corresponding a maximum single pulse energy of 2.88 nJ, and modulation depth in Q-switching envelopes is close to 100%.
The reflection-type MoS2 saturable absorber was prepared by the spin coating method. The silver plated reflector was made by plating the sliver reflective film on a Hydrophilic treated quartz sheet. The Tm,Ho:LiLuF4 all solid-state laser with MoS2 reflective saturable absorber is realized in Q-switched mode-locking operation. The laser maximum output power is 156 mW, typical Q-switched pulse envelope repetition frequency is 10KHz and the pulse width about 200μs. The repetition frequency of the mode-locked pulse sequence is 100 MHz and the modulation depth is close to 100%. The results show that the reflective MoS2 material can be used as a saturable absorber for all solid-state lasers in 2μm band.
By employing Graphene Oxide (GO) grown by vertical growth method as a saturable absorber, we first demonstrated a stable passively Q-switched mode-locked (QML) all-solid-state Tm:LLF laser. when the LD pump power is higher than 8.58W, the laser operation gets into a stable Q-switched mode-locked state, corresponding mode-locked pulse repetition frequency is 104.2MHz. The modulation depth of mode-locked pulses in the Q envelope is close to 100%. The results show that graphene oxide is a promising SA for QML solid-state laser in the 2μm wavelength
We demonstrated a dual-wavelength Tm,Ho:LuLiF4 laser operating at 1895nm and 1950nm by adjusting the pitch angle of the output coupling mirror. With a X-type four-mirror cavity, a total output power of 575 mW is achieved at an incident pump power of 2.1 W, which corresponding slope efficiency is 27.95% and the threshold power is low to 110 mW. The dual-wavelength laser is very useful for the generation of coherent light source in terahertz band.
A passively Q-switched mode locking operation was first realized in a Tm, Ho:LLF laser by using a reflection-type MoS2 saturable absorber. When the absorption pump power is greater than 1.1W, a stable Q-switched mode locking operation was achieved, corresponding to a 100MHz of the mode-locked frequency. The modulation depth in Q-switching envelopes is close to 100%. The results show that the reflection-type MoS2 can be used as the absorber material for 2μm all solid state lasers.
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