The responsivity and the bandwidth are both key parameters of a PD but also encounter tradeoff during the device designing due to the thickness of InGaAs layer absorbing light. In this paper, a balanced structure to achieve both high speed and relatively high responsivity is reported. A uni-traveling carrier PD(UTC-PD) structure is taking advantage of the high drift velocity to meet the rather high-speed exhibition. For responsivity enhancing, we apply back reflector beneath the top-illuminated UTC-PD based on micro transfer printing. To further increase the bandwidth of small size PD, we optimize the shape of CPW electrodes of PDs. With our final structure, the UTC-PD exhibits 3dB bandwidth of 100GHz and responsivity of 0.4A/W.
GaAs Schottky barrier diode (SBD) based terahertz mixer and frequency multiplier represent one of the most important method for terahertz signal emitting and receiving from 0.5THz to 5THz. Compared with original GaAs substrate, quartz using as GaAs SBD circuit base could suppress transmission loss and high order transmission mode on chip, benefits from low dielectric constant of quartz. In this paper, GaAs SBD was integrated on quartz substrate using transfer printing technique, which could achieve membrane device transfer and low cost high output of original GaAs wafer.
A heterogeneous photonic integration of silicon photonic devices and III-V compound semiconductor photodetector (PD) is demonstrated by micro transfer printing (μ-TP). Via transfer printing, InP/InGaAs PIN PD is directly bonded on the top of silicon grating coupler by ultra-thin DVS-BCB adhesion layer. 0.4A/W of photo-responsibility @1550nm and ~25GHz of -3dB bandwidth are measured on printed PD. No deterioration in coupling loss is detected in the printed PD on the silicon gratings coupler with alignment accuracy of ±1μm. This technique enables a feasible route to photonic integrated circuits.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.