Prof. Yujuan He Profile

Prof. Yujuan He

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Proceedings Article | 16 September 2024 Paper

Research on single event effect of silicon carbide diode induced by Californium source

Hong Zhang, Chao Peng, Teng Ma, Zhangang Zhang, Yuebo Liu, Yujuan He, Bin Li, Zhifeng Lei

Proceedings Volume 13255, 132550B (2024) https://doi.org/10.1117/12.3039508

KEYWORDS: Silicon carbide, Diodes, Californium, Resistance, Anodes, Electric fields, Ions, Oscilloscopes, Ion irradiation, Resistors

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The single event effect of 650 V silicon carbide diode induced by Californium source was studied. The leakage current of silicon carbide diodes irradiated under 300 V and 350 V bias voltages increased continuously, and when the cumulative irradiation fluence reaching 3 × 10⁴ n·cm^-2, the reverse leakage current of silicon carbide diodes under the two bias voltages differed by two orders of magnitude. Under the bias voltages of 370 V and 400 V, silicon carbide diodes suffered single event burnout, and the cumulative irradiation fluence that occurred single event burnout was related to the bias voltage of silicon carbide diode. The electrical characteristics test results show that the breakdown voltage of silicon carbide diodes with continuous increase of leakage current is degraded to varying degrees, and it still retains part of the breakdown characteristics, while the device with single event burnout completely loses the breakdown characteristics. The micro damage analysis results show that the single event burnout leads to the destruction of the anode contact of silicon carbide diode, which affects the turn-on and breakdown characteristics.

Proceedings Article | 18 March 2024 Paper

Influence of temperature on the total ionizing dose effects in Al2O3-doped optical fibers

Teng Ma, Yujuan He, ZhiFeng Lei, Hong Zhang, Chao Peng, ZhanGang Zhang, Yuebo Liu

Proceedings Volume 13104, 131043J (2024) https://doi.org/10.1117/12.3023490

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This article investigates the influence of temperature on the total ionizing dose (TID) effects in optical fibers. Radiation induced attenuation (RIA) spectra at 1310 nm were measured in G652, OM, PM1016-C, and homemade B1-R fibers during and after γ-irradiation at different temperatures. The B1-R fibers were doped with varying Al₂O₃ content in their core and coating layers. Experimental results show that the B1-R fibers have significant lower losses compared with the other three fibers. At a temperature of 25° and a TID does of 50 kGy, the B1-R fiber showed an RIA of only 1.35 dB/Km, while the other three fibers exhibit a minimum loss exceeding 6.44 dB/Km. Furthermore, the B1-R fiber withstood an irradiation does 100 times higher than other optical fibers. For a fixed temperature, the attenuation in B1-R fibers recovered quickly after irradiation, reaching their minimum values approximately 15 days post-irradiation, whereas the other three optical fibers required more than 25 days to recover. This study also delves into the underlying mechanisms contributing to the radiation resistance of B1-R optical fibers. The findings presented in this work offer critical insights for the development of high-performance, radiation resistant fibers, rendering them suitable for deployment in challenging deep space environments characterized by intense radiation conditions.

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