In order to solve the problem that the extra removal layer and the motion characteristics of the machine tool are difficult to meet the processing requirements of ion beam figuring, an ion beam figuring method based on new controllable ion source is proposed. By changing the working parameters of the ion optical system, the timing and duration of ion beam extraction are controlled in real time. The influence law of the machine tool motion acceleration in the process is analyzed theoretically, and then a new ion beam figuring method is proposed for the lack of dynamic performance. By adjusting the working parameters of the ion source developed by ourselves, the pulse duty ratio is continuously adjustable from 0 to 100% , and the pulse frequency is continuously adjustable from 1 to 1000 Hz. The sample is Φ100 mm monocrystalline silicon plane mirror. Firstly, the long-time stability of the new ion source was verified by line- scanning experiments, and then the error of 14.5 mm wavelength was etched with the axis of motion at a constant speed. The results show that the technology can make up for the lack of motion acceleration and avoid the extra removal layer, and have a wide range of potential applications in high precision quality adjustment, special surface treatment and so on. It is expected to promote the progress of ultra-precision machining technology.
The ultrasonic vibration cutting (UVC) method is an efficient cutting technique for the hard and brittle materials. The influence of ultrasonic vibration parameters on the critical cutting thickness (CCT) of single crystal silicon was investigated by spirally grooving experiment, and a series of experimental trials were carried out by using different cutting duty ratios (CDR). The results show that: the ultrasonic vibration efficiency is closely related to CDR, and increases with the decrease of CDR; when the ultrasonic vibration frequency and velocity were fixed, the CCT decreases as the vibration amplitude increases; the smaller the CDR is, the higher the surface finish of single crystal silicon machined by UVC will achieve. In the cutting tests, the experiment in which the value of CDR is 0.13, realized the ductile mode cutting for the Φ100mm specimen in the whole area.
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