Mr. Yasuki Kimura Profile

Yasuki Kimura

at HOYA Corp

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 28 June 2013 Paper

Better numerical model for shape-dependent dose margin correction using model-based mask data preparation

Yasuki Kimura, Takao Kubota, Kenji Kouno, Kazuyuki Hagiwara, Shohei Matsushita, Daisuke Hara

Proceedings Volume 8701, 87010H (2013) https://doi.org/10.1117/12.2028333

KEYWORDS: Photomasks, Data modeling, Model-based design, Process modeling, Critical dimension metrology, Mask making, Computer simulations, Logic, Lithography, Electron beams

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Proceedings Article | 8 November 2012 Paper

Shape-dependent dose margin correction using model-based mask data preparation

Yasuki Kimura, Ryuuji Yamamoto, Takao Kubota, Kenji Kouno, Shohei Matsushita, Kazuyuki Hagiwara, Daisuke Hara

Proceedings Volume 8522, 85221I (2012) https://doi.org/10.1117/12.958601

KEYWORDS: Photomasks, Data modeling, Model-based design, Mask making, Logic, Immersion lithography, Electron beams, Vestigial sideband modulation, SRAF, Modulation

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Proceedings Article | 30 June 2012 Paper

Placement error due to charging in EBL: experimental verification of a new correction model

Sergey Babin, Sergey Borisov, Yasuki Kimura, Kenji Kono, Vladimir Militsin, Ryuuji Yamamoto

Proceedings Volume 8441, 844112 (2012) https://doi.org/10.1117/12.978924

KEYWORDS: Electron beam lithography, Photomasks, Data modeling, Calibration, Double patterning technology, Software development, Mask making, Electron beams, Distortion, Etching

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SPIE Journal Paper | 1 April 2005

Intensity imbalance in phase shift masks and correction by multiple exposures

Moitreyee Mukherjee-Roy, Navab Singh, Sohan Mehta, Yasuki Kimura, Hideki Suda, Kazunori Nagai

JM3, Vol. 4, Issue 02, 023004, (April 2005) https://doi.org/10.1117/12.10.1117/1.1898043

KEYWORDS: Photomasks, Phase shifts, Monochromatic aberrations, Reticles, Diffraction, Critical dimension metrology, Cadmium, Scattering, Optical lithography, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

Key challenges in across-pitch 0.33-k1 trench patterning using hybrid mask

Navab Singh, Moitreyee Mukherjee-Roy, Sohan Mehta, Hideki Suda, Takao Kubota, Yasuki Kimura, Hiroshi Kinoshita

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.547729

KEYWORDS: Photomasks, Optical lithography, Etching, Modulation, Phase shifts, Lithography, Binary data, Scanners, Manufacturing, Scanning electron microscopy

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Proceedings Article | 24 May 2004 Paper

Alignment in chromeless masks

Moitreyee Mukherjee-Roy, Navab Singh, Sohan Mehta, Hideki Suda, Takao Kubota, Yasuki Kimura, Hiroshi Kinoshita

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.538224

KEYWORDS: Scanning electron microscopy, Overlay metrology, Monochromatic aberrations, Optical lithography, Reticles, Photomasks, Etching, Mask making, Phase shifts, Structural design

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Proceedings Article | 19 July 2000 Paper

Fogging effect compensation technique for photomask making

Yuji Nozaki, Toshiyuki Tanaka, Katsuhiro Takushima, Seki Suzuki, Akihiro Endo, Kohei Sogo, Yasuki Kimura

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392057

KEYWORDS: Photomasks, Etching, Anisotropy, Electrodes, Anisotropic etching, Ions, Optical lithography, Mask making, Oxygen, Plasma

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Proceedings Article | 29 June 1998 Paper

Advance of resist profile control in multilayer resist process for sub-150-nm lithography

Yasuki Kimura, Hiroyuki Endo, Akihiro Endo

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312424

KEYWORDS: Bioalcohols, Sulfur, Photoresist processing, Ions, Oxygen, Etching, Photoresist developing, Critical dimension metrology, Lithography, Plasma

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Proceedings Article | 12 February 1997 Paper

On the way to 1 Gb: demonstration of e-beam proximity effect correction for mask making

Anja Rosenbusch, Christian Kalus, Hiroyuki Endo, Yasuki Kimura, Akihiro Endo

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.284027

KEYWORDS: Mask making, Raster graphics, Photomasks, Critical dimension metrology, Data corrections, Scattering, Electron beam lithography, Sun, Control systems, Data conversion

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The e-beam proximity effect is well known as one of the limiting factors in e-beam lithography. As features get smaller the need for e-beam proximity effect correction increases. There exist different approaches to cover these effects by varying dose or shape of the pattern layout during the exposure step. Whichever algorithm is used, the question of proximity effect correction gets more and more a performance problem for forefront applications like the 256 megabit and 1 gigabit chips. The correction approach has to handle large data volume in reasonable time. Key to overcome this hurdle is to include hierarchial data handling into the proximity correction algorithm, which involves hierarchical data structures as well as hierarchy reorganization methods. The goal of the present work is to perform all necessary steps in order to guarantee the accuracy of the exposure result for the 1 gigabit memory chip. One step of the preparation is the e-beam proximity correction for raster scan machines. With respect to proximity effect correction, raster scan machines have a severe drawback. The scanning speed is constant while writing the layout, i.e., dose variation is not applicable to compensate for the proximity effect. There is, however, the geometry which can be exploited as degree of freedom. Geometrical variations of the layout underlie many constraints such as neighboring features, the exposure grid of the e-beam tool and, but not least, writing time. The paper presents how to solve some of the major problems occurring when proximity effect correction becomes an unavoidable step in the mask making process. Power and application limits of proximity effect correction for raster scan machines are investigated. The exposure has been carried out on a MEBES 4500 system. Process latitude and line width linearity are presented. In addition, practical questions like file size increase due to proximity correction are investigated. Exposure results of uncorrected and corrected pattern are compared to demonstrate the necessity of the correction as well as the improvement in pattern fidelity.

Proceedings Article | 8 December 1995 Paper

Hierarchical proximity correction using CAPROX

Ulrich Hofmann, Christian Kalus, Anja Rosenbusch, Hiroyuki Endo, Yasuki Kimura, Akihiro Endo

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228210

KEYWORDS: Scattering, Optical proximity correction, Electrons, Algorithm development, Data processing, Computer aided design, Optical spheres, Electron beam lithography, Scanning electron microscopy, Data corrections

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Proceedings Article | 16 April 1993 Paper

New method for etching rate and resist profile control in O2RIE

Yasuki Kimura, Ryouichi Aoyama, Seki Suzuki, Hiroshi Ohtsuka

Proceedings Volume 1803, (1993) https://doi.org/10.1117/12.142908

KEYWORDS: Oxygen, Etching, Molecules, Ions, Semiconducting wafers, Nitrogen, Reactive ion etching, Chemical analysis, Carbon monoxide, Scanning electron microscopy

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Showing 5 of 11 publications

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