With the advancing development of the semiconductor industry, optical resolution of EUV lithography has shrinked to 13nm. In the preceding inspection process of unpatterned silicon wafer, the resolution of nano-metrology of 12.5nm has been realized. For better improving the resolution of nano-metrology in unpatterned silicon wafer, more precise modelling of scatterometry is necessary. Metrology of silicon wafer is standardized with Polystyrenelatex (PSL) and metallic nano-spheres. Rayleigh scattering of PSL and metallic nano-particles in the three dimensional space is modeled and analyzed with Bidirectional Reflectance Distribution Function. Given the setting up of a simplified dark field inspection system and the established Rayleigh scattering BRDF model, the impact of different parameters on the polarized Rayleigh scattering of nano-particles on the silicon wafer are evaluated. The comprehensive analysis in this article provides a theoretical foundation for the following system design and upgradation.
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