Magnetically doped Fe:InP and Fe:InGaAsP was characterized for verdict coefficient. The verdet coefficient was measured to be 180°/mm/T for Fe:InGaAsP, which is higher than YIG. High mesa waveguide of Fe doped InP/InGaAsP was fabricated and characterized. Faraday rotation in InP/InGaAsP waveguide was measured for the first time. The measured verdict coefficient is 33.3°/mm/T, which is only four times smaller than that of YIG.
The Faraday effect of magnetically doped Fe:InP with Fe concentration of 3 x 1016 cm-3 doping is characterized. It demonstrates a Verdet coefficient of 23.8 °/cm/T at 1550 nm. For 45°rotation, the insertion loss at this wavelength is 1.66 dB. A zero-birefringence waveguide is designed and fabricated. The loss and birefringence of the waveguide are characterized.
Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating substrates is analyzed. A model developed reveals an exponential decrease of the current density with distance from the mesa edge. Devices with stripe- shaped mesa geometry display current crowding and a saturation of the optical output power at high injection currents. It is shown that the optical power saturation depends on the device geometry. It is also shown that saturation is less pronounced in LEDs employing a ring-shaped mesa geometry, which reduces current crowding, as compared to the conventional square- shaped mesa geometry.
A new white light emitting diode, the photon recycling semiconductor light emitting diode (PRS-LED) is demonstrated. The device consists of a GaInN/GaN LED emitting in the blue spectral range and an AlGaInP photon recycling semiconductor emitting at the complementary color. Thus the PRS-LED has two emission peaks, one in the blue and one in the amber wavelength range. The theoretical luminous performance of the PRS-LED exceeds 300 lm/W, higher than the performance of phosphor-based white LEDs.
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