In recent years, photoresists suppliers have migrated to offering a full palette of resist chemistries and processes which are specifically tailored for particular pattern types and/or exposure processes. Thus we now see designations such as 'contact resists', 'isolated line resists', 'dense line resists', 'attenuated phase shift resist', etc. This specialization offers the lithographer more choices for continual performance improvement and optimization, but implementation of multiple resist platforms in manufacturing can be problematic. In this paper, we examine the design criteria and efficacy of pattern- and application-specific photoresist versus a generic 'multi-purpose' material, and identify some of the trade-offs which can be expected when employing these resists. Generalized ideal resist behaviors are presented for different pattern criteria, including proximity bias. Both experimental and simulation results are given.
A major factor in the substantial improvement in the performance and environmental stability of DUV chemical amplified resists involved a change in the chemistry of the protecting group. A divergence of resist design has recently occurred, leading to two completely different resist classes, each with its promises and problems. These new resists (once again based on hydroxystyrene copolymers and terpolymers) can be grouped by activation energy. In this paper the authors will attempt to answer these questions and perhaps highlight areas of additional concern. Results from our investigations of two photoresists of either high or low activation energy system will be presented. Critical parameters such as overall process windows for sub-200 nm lithography variation with PEB temperature (linewidth/ degree(s)C), PEB delay, line slimming, etch rates and bottle stability will be discussed.
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