Work reports on results in development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. 4H-SiC detectors are based on high purity liquid phase epitaxy layer with the Schottky barrier contact formed by semitransparent Ni. SI GaAs detectors are based on bulk undoped material using novel electrode metallization with improved sensitivity in UV and soft X-ray ranges. The novel detector use semitransparent low work function Mg metal contact giving a new electronic characteristic of the junction. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays using the 241Am source, are presented. Improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated. Problems with design and application of related ultra-low noise electronics are introduced and discussed.
In this work, the most important aspects of semi-insulating (SI) GaAs and SI InP-based radiation detectors will be listed.
Based on that, the material and technology requirements will be identified. Further, the status of development of X- and
gamma-ray detectors based on the bulk SI GaAs and SI InP will be reviewed. The emphasis will be concentrated on the
following important aspects: (i) basic material characteristics, (ii) role of the electrodes (blocking contacts, ohmic
contacts) in the overall performances of detectors. The fabrication technology and the performances of detectors and
their application in the first quantum X-ray digital scanner recently developed will also be illustrated along with some
conclusions about the material/application relations: (i) radiation detectors based on bulk SI GaAs may readily find
applications in X-ray digital radiology imaging systems, whilst (ii) SI InP-based detectors are very promising but need
further development to reach performances suitable for the application.
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