We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement
of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of
GaN due to the non centrosymmetric crystalline structure of this material. It consists of a GaN cavity embedded between
two GaN/AlGaN Distributed Bragg Reflectors designed for a reference mode coincident with a second harmonic field
generated in the near UV region (~ 400 nm). Critical issues for this target are the crystalline quality of the material,
together with sharp and abrupt interfaces among the multi-stacked layers. A detailed investigation on the growth
evolution of GaN and AlGaN epilayers in such a configuration is reported, with the aim to obtain high quality factor in
the desiderated spectral range. Non linear second harmonic generation experiments have been performed and the results
were compared with bulk GaN sample, highlighting the effect of the microcavity on the non linear optical response of
this material.
In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC)
microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two
AlGaN/GaN Distributed Bragg Reflectors on sapphire substrate, designed to generate a λ= 800 nm frequency downconverted
signal (χ(2) effect) from an incident pump signal at λ= 400 nm. The heterostructure was epitaxially grown by
metal organic chemical vapour deposition (MOCVD) and integrates a properly designed 1D-PhC grating, which
amplifies the signal by exploiting the double effect of cavity resonance and non linear GaN enhancement. The integrated
1D-PhC microcavity was fabricate combing a high resolution e-beam writing with a deep etching technique. For the
pattern transfer we used ~ 170 nm layer Cr metal etch mask obtained by means of high quality lift-off technique based
on the use of bi-layer resist (PMMA/MMA). At the same time, plasma conditions have been optimized in order to
achieve deeply etched structures (depth over 1 micron) with a good verticality of the sidewalls (very close to 90°).
Gratings with well controlled sizes (periods of 150 nm, 230 nm and 400 nm respectively) were achieved after the pattern
is transferred to the GaN/AlGaN heterostructure.
We present experimental results on noncollinear second harmonic generation from III-V nitrides
structures, discussing the collinear and noncollinear configuration as a function of polarization
state of both fundamental and generated beams .
We analyze in this work the second harmonic amplification of χ(2) nonlinear process in membrane type GaAs circular
photonic crystal. This unconventional kind of photonic crystal is well suited for the generation of whispering gallery
modes due to the circular symmetric periodic pattern. The Gaussian beam of a fundamental pump signal at 1.55 μm
defines a whispering gallery mode resonance and generates a second harmonic mode at 0.775 μm in the central missing
hole micro-cavity. The periodic pattern and the micro-cavity are tailored and optimized in order to generate a second
harmonic conversion efficiency of 50 %. We predict the resonances by an accurate 2D time domain model including χ(2)
nonlinearity and also by a 3D Finite Element Method FEM. Moreover, by using a 3D membrane configuration, we
predict a quality factor of the second harmonic mode of the order of 35000.
We present in this work the scalar potential formulation of second harmonic generation process in χ(2) nonlinear
analysis. This approach is intrinsically well suited to the application of the concept of circuit analysis and synthesis to
nonlinear optical problems, and represents a novel alternative method in the analysis of nonlinear optical waveguide, by
providing a good convergent numerical solution. The time domain modeling is applied to nonlinear waveguide with
dielectric discontinuities in the hypothesis of quasi phase matching condition in order to evaluate the conversion
efficiency of the second harmonic signal. With the introduction of the presented rigorous time domain method it is
possible to represent the physical phenomena such as light propagation and second harmonic generation process inside a
nonlinear optical device with a good convergent solution and low computational cost. Moreover, this powerful approach
minimizes the numerical error of the second derivatives of the Helmholtz wave equation through the generator
modeling. The novel simulation algorithm is based on nonlinear wave equations associated to the circuital approach
which considers the time-domain wave propagating in nonlinear transmission lines. The transmission lines represent the
propagating modes of the nonlinear optical waveguide. The application of quasi phase matching in high efficiency
second harmonic generation process is analyzed in this work. In particular we model the χ(2) non linear process in an
asymmetrical GaAs slab waveguide with nonlinear core and dielectric discontinuities: in the nonlinear planar
waveguides a fundamental mode at λ=1.55 μm is coupled to a second-harmonic mode (λ=0.775 μm) through an
appropriate nonlinear susceptibility coefficient. The novel method is also applied to three dimensional structures such as
ridge waveguides.
We report on the growth and characterization of low threshold 1.32-μm quantum dots (QDs) laser diodes. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). From samples containing multilayer QDs and using the Limited-Area Photoluminescence (LAPL) technique we have shown that the gain of an N-layer structure is higher than N times that of a single layer. This enhancement is attributed to the increase of the quantum dot density in the upper layers and also to the use of the high growth temperature spacer layer. Broad area laser diodes were processed from the grown samples containing three layers of InAs QDs grown directly on GaAs and capped with 4-nm-thick InxGa1-xAs layer. Than measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit between 1.29 and 1.32-μm which is beyond the strategic telecommunication wavelength. The characteristic temperature is around 80 K and very stable in the hole range of the operating temperature (from 0 to 90 °C). The internal quantum efficiency is 53% and the modal gain per QD layer was estimated to be ~ 6 cm-1. For an infinite cavity length a threshold current density of 8 A/cm2 per QD layer was obtained. From the calculation of the optical confinement of QDs, we have estimated a material gain of 1979 cm-1.
In this work we present a method to obtain room temperature ground state emission beyond 1.3 μm from InGaAs QDs, grown by MOCVD, embedded directly into a binary GaAs matrix. The wavelength is tuned from 1.26 μm up to 1.33 μm by varying the V/III ratio during the growth of the GaAs cap layer, without using seeding layer or InGaAs wells. A line-shape narrowing (from 36 meV to 24 meV) and a strong reduction of the temperature dependent quenching of the emission (down to a factor 3 from 10K to 300K) are observed, that represent the best value reported for QD structures emitting at 1.3 μm.
The results are explained in term different morphological evolution and surface reconstruction undergone by the InGaAs islands during the GaAs overgrowth that result in larger QD size and in lower In-Ga intermixing. Indeed, cross sectional TEM images show an increase in the QD size of more than 30% with decreasing the AsH3 flow.
The overall strain reduction due to the use of the GaAs matrix allows the fabrication of highly efficient staked QD layers. The single and multiple QDs samples show a systematic increase of the emission intensity and similar spectral shape.
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