This work presents a new burst mode CMOS image sensor in 0.35 μm SiGe BiCMOS technology that can achieve a pixel rate of 1 TS/s. The sensor employs a novel integrated Streak architecture that includes a vector of 200 integrated photodiodes, each connected to a wideband transimpedance amplifier, and a 200 points deep analogue on-chip memory for burst imaging. Placing the pixel electronics next to the photodector results in a high fill factor of 84 %. The circuit has a closed loop delay generator that allows sampling speeds from 50 μs to 200 ps, resulting in the largest range recorded for a monolithic CMOS sensor to date. The sensor features a post-trigger functionality to avoid synchronization issues during event recording. For the recording of repetitive events, the sensor has a new accumulation mode to enhance the signal to noise ratio (SNR) by reducing the bandwidth of the sample and hold circuit, thus allowing the SNR to be increased by a factor of sqrt(10) per decade. The state-of-the-art time resolution makes this sensor ideal for observing subnanosecond events. It finds applications in various fields, including fluorescence metrology, time-resolved spectroscopy, optical tomography, laser Doppler velocimetry, and detonics.
we present the very first fully integrated streak camera realized with a specific ultrafast CMOS sensor. This sensor is composed of a vector of 200 photodiodes and each photodiode signal is sampled on an on-chip memory that can record 200 samples. It results on a sampling matrix of 200x200 samples that stores the values of the slit at the different sampling time. The sampling rate can be set up to 4 GS/s, i.e., the maximal total sampling rate of the matrix is 800 GS/s. It is possible to post trigger the streak camera and to extract the past samples.
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