Dr. Vincent Jacques Profile

Dr. Vincent Jacques

at Lab Charles Coulomb

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Publications (2)

Proceedings Article | 1 August 2021 Presentation

Quantitative imaging of antiferromagnetic spin cycloidal textures on strain engineered BiFeO3 thin films with a scanning nitrogen-vacancy magnetometer

Hai Zhong, Johanna Fischer, Angela Haykal, Aurore Finco, Alexander Stark, Felipe Favaro de Oliveira, Patrick Maletinsky, Mathieu Munsch, Karim Bouzehouane, Stéphane Fusil, Vincent Jacques, Vincent Garcia

Proceedings Volume 11805, 118050U (2021) https://doi.org/10.1117/12.2600960

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Antiferromagnetic thin films attract significant interest for future low-power spintronic devices [1]. Multiferroics, such as bismuth ferrite BiFeO3, in which antiferromagnetism and ferroelectricity coexist at room temperature, appears as a unique platform for spintronic [2] and magnonic devices [3]. The nanoscale structure of its ferroelectric domains has been widely investigated with piezoresponse force microscopy (PFM), revealing unique domain structures and domain wall functionalities [4]. However, the nanoscale magnetic textures present in BiFeO3 and their potential for spin-based technology remain concealed. In this report, we present two different antiferromagnetic spin textures in multiferroic BiFeO3 thin films with different epitaxial strains, using a commercial non-invasive scanning Nitrogen-Vacancy (NV) magnetometer based on a single NV defect in diamond, with a calibrated NV flying height of 60 nm and a proven DC field sensitivity of 1 T/Hz. Two BiFeO3 samples were grown on DyScO3 (110) and SmScO3 (110) substrates (later mentioned as BFO/DSO and BFO/SSO, respectively) using pulsed laser deposition. The striped ferroelectric domains in both samples are first observed by the in-plane PFM. The scanning NV magnetometry (SNVM) confirms the existence of the spin cycloid texture, with zig-zag wiggling angles of 90 and 127, and propagation wavelength of DSO=64 nm andSSO=103 nm, respectively. At the local scale, the combination of PFM and SNVM allows to identify the relative orientation of the ferroelectric polarization and cycloid propagation directions on both sides of a domain wall. For the BFO/DSO sample, the 90-degree in-plane rotation of the ferroelectric polarization imprints the 90-degree in-plane rotation of the cycloidal propagation direction along k1=[-1 1 0], corresponding to the type-I cycloid. On the contrary, in the BFO/SSO sample, the propagation vectors are found to be along k1'=[-2 1 1] and k2'= [1 -2 1] directions in the neighboring domains separated by the 71 domain wall. It is worth to mentioned that in the previous report [5], BFO/SSO, prepared in another growth chamber, showed G-type antiferromagnetic textures, compared to the observed type-II cycloid here. Our results here shed the light on future potential for reconfigurable nanoscale spin textures on multiferroic systems by strain engineering.

Proceedings Article | 19 April 2017 Presentation

Single-photon emission from a high-purity hexagonal boron nitride crystal (Conference Presentation)

Luis Martinez, Thomas Pelini, Victor Waselowski, Jeronimo Maze, Bernard Gil, Guillaume Cassabois, Vincent Jacques

Proceedings Volume 10104, 101040Z (2017) https://doi.org/10.1117/12.2255811

KEYWORDS: Single photon, Quantum information, Boron, Crystals, Metrology, Diamond, Heterojunctions, Heart, Quantum information processing, Solid state electronics

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Point-like defects in wide-bandgap materials are at the heart of a broad range of emerging applications including quantum information processing and metrology [1]. A well-known example is the nitrogen-vacancy (NV) defect in diamond, which can be used as a solid-state qubit to perform elaborate quantum information protocols [2] and highly sensitive magnetic field sensing [3]. These results motivate the search of new defects in other wide-bandgap materials, which would offer an expanded range of functionalities compared to NV defects in diamond. In that context, hexagonal boron nitride (hBN) appears as an appealing material. First, it has a 6-eV bandgap, which is ideally suited to host optically active defects with energy levels deeply buried between the valence band and the conduction band. Second, hBN is an electrical insulator with a two-dimensional (2D) honeycomb structure, which is a key element of Van der Waals heterostructures. Such “artificial” materials are currently attracting a great interest owing to their unique mechanical, electrical and optical properties [4]. Combining these properties with individual quantum systems would likely open new perspectives in quantum technologies. In this talk, I will report on the optical detection of individual defects hosted in a high-purity hBN crystal. Stable single photon emission is demonstrated under ambient conditions by means of photon correlation measurements [5]. A detailed analysis of the photophysical properties of the defect reveals a highly efficient radiative transition, leading to one of the brightest single photon source reported to date from a bulk, unpatterned, material. These results make a bridge between the physics of 2D materials and quantum technologies, and pave the way towards applications of van der Waals heterostructures in photonic-based quantum information science, metrology and optoelectronics. References [1] D. D. Awschalom, L. C. Bassett, A. S. Dzurak, E. L. Hu, and J. R. Petta, Science 339, 1174 (2013). [2] B. Hensen et al., Nature 526, 682-686 (2015). [3] J.-P. Tetienne, T. Hingant, J.-F. Roch, P. Maletinsky, and V. Jacques, Rep. Prog. Phys. 77, 056503 (2014). [4] A. K. Geim and I. V. Grigorieva, Nature 499, 419-425 (2013). [5] L. J. Martinez, T. Pelini, V. Waselowski, J. R. Maze, B. Gil, G. Cassabois, and V. Jacques, preprint arXiv:1606.04124.

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