We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two
gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped
semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short
upperstate lifetime of the OPS, the generated 593nm output power was stable.A
Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features
such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and
reliability opened this pioneering technology access to a wide range of applications such as flow cytometry,
confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts,
forensic, metrology.
This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers.
It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently
accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be
discussed. A survey of key applications will be given.
Optically pumped semiconductor lasers are scalable up to several 10ths of Watts of output power, maintaining
excellent beam quality and high reliability. A further key advantage of the OPS technology is wavelength flexibility:
the accessible wavelength range spans from 915 nm to 1180 nm. Frequency doubling expands this into the blue to
yellow spectral range. The current investigation aims at applications (such as Raman spectroscopy) where ultra-narrow
bandwidth lasers are required. Results of a single frequency green-yellow OPS laser will be presented.
We present an air-cooled optically pumped semiconductor laser that provides a cw output power of 1W at 488
nm. This performance was achieved via intracavity frequency doubling at a laser diode pump power of 2.5
Watts. The increased efficiency was realized by optimizing the OPS chip design and improving the heat
extraction from the OPS chip. Efficient cooling of the OPS chip and a compact and mechanically stable folded
resonator provide maintenance-free long life laser operation with an M2 of less than 1.1 and a noise of less than
0.25% rms. The size of the laser head is the same as for the 20 mW commercially available version, namely
125 x 70 x 34 mm.
The lack of blue pump sources for Pr-doped materials has been overcome with the recent progress in optically
pumped semiconductor lasers (OPS) operating at 479 nm. The availability of reliable high power OPS pump lasers,
makes Pr3+-doped crystals ideal gain media for compact and efficient ultraviolet solid-state lasers with output power
in the Watt range.
We report on the scalability of a 522/261 nm Pr:YLF cw laser that is dual-end-pumped by two OPS lasers at 479 nm.
At 9.6 W of incident pump power more than 4 W were obtained at 522 nm with a slope efficiency of 45%.
Intracavity frequency doubling of 522 nm resulted in 1 Watt of cw UV output at 261 nm.
Diode pumped frequency doubled Optically Pumped Semiconductor lasers (OPS), has proven to be a reliable source
of laser radiation in the blue and blue-green spectral range between 460 nm and 505 nm. One of the major
advantages of using semiconductors as gain medium is the possibility to tailor the wavelength of the semiconductor
material by means of band gap engineering. Here we report about new OPS material enabling the wavelength region
between 1090 nm and 1160 nm which allows the realization of frequency doubled lasers between 545 nm and 580
nm. Laser results up to several Watts in the yellow spectral range as well as efficiency and lifetime data will be
presented.
In this paper, we report on 500 mW of cw ultraviolet radiation at 360 nm, which has been obtained by intracavity
frequency doubling of a Pr:YLF laser, end pumped by 1.8 W Coherent High Power OPS Laser at 479 nm. We have
demonstrated the scalability of Pr:YLF laser to pump power of 5.3Watts, resulting in real continuous wave 2.5 Watts
of output power at 720 nm and cw 1.3 Watts at 360 nm.
In this paper, we report on 2.5 Watts of output power at 522 nm of Pr:YLF laser end pumped by 5.3 W Coherent
High Power OPS Laser at 479 nm, and on 620 mW of cw ultraviolet radiation at 261 nm, which has been obtained
by intracavity frequency doubling of the Pr:YLF laser with a BBO crystal.
Optically pumped semiconductor material is a complimentary gain medium for rare earth or transition metal doped crystals. The design of several compositions based on GaAs allows the realization of a wavelength range between 710nm and 1180nm. This can be diode pumped and frequency doubled to cover the near UV up to the yellow spectral range. The power is scaleable and we have realized several Watts at 488nm and 460nm. Experimental results will be presented and discussed as well as reliability data to show that this technology has ripened for industrial applications.
This paper is devoted to the donor (chromium ion) excitation-energy decay caused by interaction with the acceptors (rare earth ions) in garnet crystals, as analyzed within the approximation of a static nonradiative energy transfer.
Processes of interaction of excited ions are investigated in several laser crystals: Er-Er -- in YSGG:Cr, Er and GSAG:Cr,Er crystals; Ho-Ho -- in YSGG:Cr, Ho crystals; Tm-Tm -- in YSGG:Cr,Tm and YAG:Cr,Tm crystals; Tm-Ho -- in YSGG:Cr, Tm, Ho and YSAG:Cr, Tm, Ho crystals; Cr-Cr -- in 11 of different laser crystals (ruby, YAG, GSGG, YSGG, LICAF, et al.); Cr-TR (Er, Ho, Tb, Tm, Nd, -- TR) in YAG, YSGG, GSGG, GSAG crystals.
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