Mr. Thijs Hollink Profile

Thijs Hollink

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Publications (6)

Proceedings Article | 24 March 2017 Presentation + Paper

Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform

V. Blanco Carballo, J. Bekaert, M. Mao, B. Kutrzeba Kotowska, S. Larivière, I. Ciofi, R. Baert, R. H. Kim, E. Gallagher, E. Hendrickx, L. E. Tan, W. Gillijns, D. Trivkovic, P. Leray, S. Halder, M. Gallagher, F. Lazzarino, S. Paolillo, D. Wan, A. Mallik, Y. Sherazi, G. McIntyre, M. Dusa, P. Rusu, T. Hollink, T. Fliervoet, F. Wittebrood

Proceedings Volume 10143, 1014318 (2017) https://doi.org/10.1117/12.2258005

KEYWORDS: Metals, Extreme ultraviolet lithography, Optical lithography, Back end of line, Extreme ultraviolet, Etching, Semiconducting wafers, Logic, Critical dimension metrology, Tin

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Proceedings Article | 4 September 2015 Paper

Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies

N. Davydova, R. Kottumakulal, J. Hageman, J. McNamara, R. Hoefnagels, V. Vaenkatesan, A. van Dijk, K. Ricken, L. de Winter, R. de Kruif, R. Jonckheere, T. Hollink, G. Schiffelers, E. van Setten, P. Colsters, W. Liebregts, R. Pellens, J. van Dijk

Proceedings Volume 9661, 96610B (2015) https://doi.org/10.1117/12.2195733

KEYWORDS: Aluminum, Deep ultraviolet, Reflectivity, Reticles, Semiconducting wafers, Scanners, Extreme ultraviolet, Extreme ultraviolet lithography, Coating, Reflection

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EUV sources emit a broad band DUV Out-of-Band (OOB) light, in particular, in the wavelength range 100-400 nm. This can cause additional exposure of EUV resists made that are based on a ArF/KrF resist platform. This DUV light is partially suppressed while travelling through the optical path but a non-negligible part of it reaches wafer level and impacts imaging.

This is important for imaging at the edges of an image field when fields are printed very close to each other on the wafer (so-called butted fields, with zero field to field spacing). DUV light is reflected from the reticle black border (BB) into a neighboring exposure field on the wafer. This results in a CD change at the edges and in the corners of the fields and therefore has an impact on CD uniformity. Experimental CDU results are shown for 16 nm dense lines (DL) and 20 nm isolated spaces (IS) (N7 logic design features) in the fields exposed at 0 mm and 0.5mm distance on the wafer. Areas close to the edge of the image field are important for customer applications as they often contain qualification and monitoring structures; in addition, limited imaging capabilities in this area may result in loss of usable wafer space.

In order to understand and control OOB DUV light, it must be measured in the scanner. DUV measurements are performed in resist using a special OOB reticle coated with Aluminum (Al) having low EUV reflectance and high DUV reflectance. A model for DUV light impact on the imaging is proposed and verified. For this, DUV reflectance data is collected in the wavelengths range 100-400 nm for Al and BB and the ratio of reflectances of these materials is determined for assumed scanner and resist OOB spectra. Also direct BB OOB test is performed on the wafer and compared to Al OOB results. The sensitivity of 16 nm DL and 20 nm IS to OOB light is experimentally determined by means of double exposure test: a wafer with exposed imaging structures undergoes a second flood exposure from a DUV reflective material (Al or BB).

Finally, several OOB mitigation strategies are discussed, in particular, suppression of DUV light in the scanner (~3x improvement), recent successes of DUV suppression for 16 nm imaging resist (~1.8x improvement) and DUV reflectance mitigation in the reticle black border (~3.8x). An overview of OOB test results for multiple NXE systems will be shown including systems with new NXE:3350 optics with improved OOB suppression.

Proceedings Article | 17 April 2014 Paper

EUV source-mask optimization for 7nm node and beyond

Xiaofeng Liu, Rafael Howell, Stephen Hsu, Kaiyu Yang, Keith Gronlund, Frank Driessen, Hua-Yu Liu, Steven Hansen, Koen van Ingen Schenau, Thijs Hollink, Paul van Adrichem, Kars Troost, Jörg Zimmermann, Oliver Schumann, Christoph Hennerkes, Paul Gräupner

Proceedings Volume 9048, 90480Q (2014) https://doi.org/10.1117/12.2047584

KEYWORDS: Source mask optimization, Photomasks, Extreme ultraviolet, Scanners, Fiber optic illuminators, 3D modeling, Optimization (mathematics), Extreme ultraviolet lithography, Deep ultraviolet, Algorithm development

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Proceedings Article | 16 April 2012 Paper

NXE:3100 full wafer imaging performance and budget verification

Eelco van Setten, Koen van Ingen Schenau, Mark O'Mahony, Thijs Hollink, Friso Wittebrood, Natalia Davydova, Mark Eurlings, Kees Feenstra, Jo Finders, Mircea Dusa, Stuart Young

Proceedings Volume 8352, 835205 (2012) https://doi.org/10.1117/12.918495

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Imaging systems, Reticles, Extreme ultraviolet, Electroluminescence, Critical dimension metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 2 April 2011 Paper

Mask 3D effects: impact on imaging and placement

Jo Finders, Thijs Hollink

Proceedings Volume 7985, 79850I (2011) https://doi.org/10.1117/12.896909

KEYWORDS: Photomasks, Scattering, Semiconducting wafers, Seaborgium, 3D modeling, Polarization, Lithography, Wavefronts, 3D image processing, Diffraction

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Proceedings Article | 23 March 2011 Paper

Advanced wavefront engineering for improved imaging and overlay applications on a 1.35 NA immersion scanner

Frank Staals, Alena Andryzhyieuskaya, Hans Bakker, Marcel Beems, Jo Finders, Thijs Hollink, Jan Mulkens, Angelique Nachtwein, Rob Willekers, Peter Engblom, Toralf Gruner, Youping Zhang

Proceedings Volume 7973, 79731G (2011) https://doi.org/10.1117/12.880759

KEYWORDS: Wavefronts, Photomasks, Scanners, Source mask optimization, Optimization (mathematics), Semiconducting wafers, 3D acquisition, Reticles, Computational lithography, 3D image processing

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Showing 5 of 6 publications

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