Extreme Ultraviolet (EUV) patterning technology was deployed for the mass production of 7nm logic devices in 2018 and recently achieved 5nm. The demand for device scaling has produced more complex processes and expensive multiple-patterning requirements. Broad consensus on the direction of EUV technology has triggered the semiconductor industry to aggressively push new resist material development, particularly designed to overcome stochastic issues, which coincides with the establishment of the single-print capability infrastructure for the high numerical aperture (NA) EUV scanner. Although standard chemically amplified resists (CAR) have been struggling to overcome stochastic issues, they have improved significantly to demonstrate 24nm resolution with single exposure patterning using ASML’s NXE3400B. At the point of use filtration, ultrahigh molecular weight polyethylene (UPE) filters have been widely used to eliminate traditional sources of defectivity, such as particles and aggregates in photoresist materials thanks to their high retention efficiency and excellent photochemical compatibility. However, newly designed UPE filters with innovative membrane morphology are needed to further lower defectivity rates. This paper describes our efforts to optimize filtration and improve photoresist defectivity. A comparative study of the patterning performance of various POU filters is presented. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM Lithius ProTM Z series. An EUV CAR resist was filtered and coated on wafers that were subsequently exposed, etched in hardmask stack, and analyzed for patterning defect performance. This study examines the efficacy of optimized filter design to reduce defects and provides a recommendation to achieve lower defect density.
Extreme Ultraviolet (EUV) lithography poses an ever greater challenge to RLS (resolution, line edge roughness, and sensitivity) than previous photolithography methods as lithographers try to achieve sub-14nm pitch in a single-exposure. Additionally, EUV is particularly susceptible to stochastic imaging defects. Although standard chemically amplified resists (CARs) can be exposed with EUV, these materials struggle to achieve resolution targets at manufacturable doses due to limitations in laser source power and resist sensitivity and contribute to stochastics by nature of their random distribution of components. An innovative approach with Inpria Metal Oxide Resists (MORs) can offer an alternative to overcome both EUV resolution and sensitivity limitations, as well as address stochastic defects. On the other hand, traditional sources of defectivity, such as particles, present another challenge, especially when moving toward high-volume manufacturing. Ultrahigh molecula r weight polyethylene (UPE) membrane filters have been used for metal oxide EUV resist filtration because of their high retention efficiency and excellent photochemical compatibility. However, newly designed UPE filters with innovative membrane morphology are needed to further lower defectivity rates with these new resists. This paper describes efforts to continue to improve metal oxide EUV resist defectivity through filtration optimization. A comparative study of the patterning performance of various Point-of-Use (POU) filters is presented. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM Lithius ProTM Z series. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for patterning defect performance. This study examines the efficacy of optimized filtration design to reduce defects and provides a recommendation to achieve lower defect density.
Extreme Ultraviolet (EUV) lithography poses an ever greater challenge to RLS (resolution, line edge roughness, and sensitivity) than previous photolithography methods, as lithographers try to achieve sub-14 nm pitch in a single-exposure [1-2]. Additionally, EUV is particularly susceptible to stochastic imaging defects[3]. Although standard chemically amplified resists (CAR) can be exposed with EUV, these materials struggle to achieve resolution targets at manufacturable doses due to limitations in laser source power and resist sensitivity and contribute to stochastics by nature of their random distribution of components. An innovative approach with metal-oxide resist can offer an alternative to overcome both EUV resolution and sensitivity limitations, as well as address stochastic defects[4-5]. On the other hand, traditional sources of defectivity, such as particles, presents another challenge, especially when moving toward high volume manufacturing. Ultrahigh molecular weight polyethylene (UPE) filters have been used for metal oxide EUV resist filtration because of their high retention efficiency and excellent photochemical compatibility. However, other filters with innovative materials are needed to further lower defectivity of these new resists. This paper describes efforts to continuously improve metal oxide EUV resist defectivity through filtration optimization. A comparative study of the patterning performance of various Point-of-Use (POU) filters is presented. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM LITHIUS ProTM Z EUV series. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for after etch inspection (AEI) patterning defect performance. This study examines the efficacy of optimized filtration design to reduce defects and provides a recommendation to achieve lower defect density.
Defect source reduction in Extreme Ultraviolet (EUV) photoresists is a critical requirement to improve device performance and overall yield for a seamless transition to high volume manufacturing, especially for technologies in the 3 nm node and beyond. This is particularly true considering the increased influence of stochastic imaging defectivity in EUV relative to prior lithographic technologies. Filtration is one of the key enabling technologies to maintain a material’s purity and therefore enhance process performance, beginning when the photoresist is manufactured, and continuing until the photoresist is dispensed on a wafer. We have previously presented a novel filtration technology development to maximize filtration efficiency for specific contamination sources and reduce defectivity in EUV photoresists. In this paper, further results and possible defect reduction mechanisms will be updated and discussed to address stochastic issues, specially variability of polymer molecular weight distribution in EUV CAR (Chemically Amplified Resists) photoresists.
Continued momentum in the development of EUV photolithography toward high volume manufacturing has increased photoresist purity requirements that accelerate improvements in resolution, sensitivity, and line edge roughness. Previous research indicates 1,2,3 that the composition of photoresist materials is a major contributor to stochastic effects as semiconductor device critical dimensions decrease. Photoresist is a mixture of small molecules of PAG (photo acid generator) and quencher, and large polymer molecules, whose molecular weight can pose significant challenges to filtration and purification operations. It is critical to maintain the compositional balance, stability, and uniformity of photoresist to ensure expected lithographic performance. Contamination control (filtration + purification) technology is important to maintain a material’s purity, removal of undesired species, to improve lithographic performance. This paper describes research to develop a new filter evaluation method to understand and assess interactions of filters with photochemicals. The study investigates the ability of various filtration materials to improve polymer uniformity in an EUV polymer analogue. This study also demonstrates the efficacy of optimized filtration design to capture different contamination sources and improve polymer distribution uniformity, providing recommendations to reduce contaminants and their impact on stochastic issues.
The progression of EUV (Extreme Ultra-Violet) lithography into high volume manufacturing is driving the evolution of increased photochemical purity requirements. Further scaling will intensify the challenge to improve inline yield, ensure supply chain integrity, and increase reliability. Si hardmask materials play an important role in pattern transfer, and therefore require strict compositional materials integrity and stability to ensure expected performance. It is therefore critical to assess interactions between Si hardmask materials and components in the chemical delivery system to ensure hardmask materials purity and overall integrity.
There has been an increasing demand on filtration technology to enhance material purity in semiconductor unit processes. Many efforts to improve filtration have focused on establishing retention ratings using various particulate contaminants. While this is an important parameter to understand particle removal, it is equally important to understand the fundamental interactions between photochemicals and filters. As materials change and the smallest defects become even more challenging to detect, new filter screening methodologies are needed to address the most stringent defect targets.
In this paper, a novel filter screening metrology is introduced to identify optimized filtration candidates for specific defect sources and improve defectivity in Si hardmask materials. Results and possible mechanisms of defect reduction will be discussed.
Continued momentum in the development of EUV photolithography toward high volume manufacturing has driven the evolution of increased photoresist purity requirements. Further scaling will intensify the challenge to improve inline yield and reliability performance. The composition of EUV photoresist materials requires careful compositional balance and stability to ensure expected lithographic performance. It is therefore critical to understand and assess interactions between photomaterials and the many touchpoints along the entire value chain to maintain the purity and integrity of these materials.
Filtration technology is an important part of maintaining a material’s purity. When choosing a filter, there are many factors to consider, starting with the membrane material. For instance, nylon filters effectively remove polar polymers through an adsorption mechanism. Particulate contaminants are often removed by size-exclusion, mostly commonly observed with certain UPE (ultra-high molecular weight polyethylene) membranes. As lithography materials change and the smallest defects become even more challenging to detect, filtration technology innovation, such as the development of OktolexTM, is needed to meet the most stringent defect targets. In this paper, a tailored filter is introduced to enhance filtration performance and address specific defect sources in EUV photoresists. Results and possible mechanisms of the defect reduction will be discussed.
ArF lithography is the primary technique used in leading edge semiconductor fabrication. However, as lithographers attempt to create manufacturable processes for N7 and future nodes, they are challenged to achieve improvements in cost of ownership and productivity. One means to reduce cost of ownership is to reduce photolithography layers, which can be achieved with EUV lithography. Chemical manufacturers are struggling to solve stochastic issues that evolve with the use of EUV lithography, as well as develop the many complementary materials required to enable the technology. Conventional filters such as Nylon and UPE (ultra-high molecular weight polyethylene) have been used in manufacture of photochemicals and new filtration technologies must be developed to innovate along with chemical suppliers.
Entegris has recently developed several innovative membranes: a next generation UPE and OktolexTM. The next generation UPE overcomes the trade-off between flow rate and pore size, while also being compatible with a range of chemistries. OktolexTM selectively removes defects based on tailored membrane modification technology, further addressing defect sources that come from newly formulated chemistries.
In this paper, these innovative technologies are introduced to address the challenges of advanced photoresist defectivity by enhancing filtration performance. Results and possible mechanisms of defect reduction will be discussed.
Defect source reduction in leading-edge iArF resists is a critical requirement to improve device performance and overall yield in lithography manufacturing processes. It is believed that some polar polymers can aggregate and be responsible for single or multiple micro-bridge defects. Further investigation into the formation of these defects is needed. We have previously presented the effective removal of gel-like polymers using nylon media [1]. However, as the industry is moving to smaller feature sizes, there is a need to further improve the defect removal efficiency. In this paper, a filter, comprised of a novel membrane called Azora with unique morphology and high flow performance is introduced. This new filter shows better on-wafer in an advanced ArF solution than conventional Nylon and UPE media. In addition, it shows improved stability during chemical storage. Results and possible retention mechanisms are discussed.
Metal ions in photoresists and solvents pose an ever greater contamination problem in photolithography’s advanced applications. The reduction of metal contaminants is critical in the entire photochemical supply chain. In this paper we demonstrate that two novel membrane purifiers dramatically reduced the metal contents in a range of organic solvents. These solvents are used for photoresist manufacturing and for wafer surface and dispense line rinse in track tools. The impact of flow rate and metal concentrations in the feed on the metal removal efficiency of the purifiers is presented. Furthermore, a study to determine the dominant mechanism of metal reduction in solvents is proposed.
Weak-polar solvents like PGMEA (Propylene Glycol Monomethyl Ether Acetate) or CHN (Cyclohexanone) are used to dissolve hydrophobic photo-resist polymers, which are challenging for traditional cleaning methods such as distillation, ion-exchange resins service or water-washing processes. This paper investigated two novel surface modifications to see their effectiveness at metal removal and to understand the mechanism. The experiments yielded effective purification methods for metal reduction, focusing on solvent polarities based on HSP (Hansen Solubility Parameters), and developing optimal purification strategies.
Recently nylon filters have been widely implemented in photolithography processes to improve the
yields because many IC and photoresist manufacturers have empirical evidence indicating that the
nylon membrane can adsorb impurities. However, the mechanism by which the nylon membrane
reduces defects is unclear. It is useful to study different defect-causing mechanisms by focusing on the
particular components of photoresists. In this paper various adsorption tests were performed utilizing
surface modification and different photoresist components to measure the effect of nylon membranes
on resist properties, including surface tension, PAG (photoacid generator) concentration and quencher
concentration. Ultimately, the study hopes to determine the most effective way to increase yields by
focusing on how to best implement a nylon filtration strategy.
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