Mr. Tasuku Matsumiya Profile

Tasuku Matsumiya

at Tokyo Ohka Kogyo Co., Ltd.

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Publications (7)

Proceedings Article | 1 April 2016 Paper

Directed self-assembly of Si-containing and topcoat free block copolymer

Tasuku Matsumiya, Takehiro Seshimo, Tsuyoshi Kurosawa, Hitoshi Yamano, Ken Miyagi, Tomotaka Yamada, Katsumi Ohmori

Proceedings Volume 9777, 97771P (2016) https://doi.org/10.1117/12.2218243

KEYWORDS: Directed self assembly, Annealing, Thin films, Etching, Lithography, Optical lithography, Manufacturing, Semiconductors, Polymers, Control systems, Silicon, Dry etching, Nitrogen, Scanning electron microscopy

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Proceedings Article | 25 March 2016 Paper

Directed self-assembly of PS-b-PMMA with ionic liquid addition

Xuanxuan Chen, Takehito Seo, Paulina Rincon-Delgadillo, Tasuku Matsumiya, Akiya Kawaue, Takaya Maehashi, Roel Gronheid, Paul Nealey

Proceedings Volume 9779, 97790S (2016) https://doi.org/10.1117/12.2220420

KEYWORDS: Directed self assembly, Liquids, Polymethylmethacrylate, Annealing, Lithography, Scanning electron microscopy, Nanostructures, Materials processing, Semiconducting wafers, Picosecond phenomena

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Proceedings Article | 20 March 2015 Paper

Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process

Tasuku Matsumiya, Tsuyoshi Kurosawa, Masahito Yahagi, Hitoshi Yamano, Ken Miyagi, Takaya Maehashi, Issei Suzuki, Akiya Kawaue, Yoshitaka Komuro, Taku Hirayama, Katsumi Ohmori

Proceedings Volume 9425, 942517 (2015) https://doi.org/10.1117/12.2087009

KEYWORDS: Materials processing, Coating, Annealing, Error analysis, Critical dimension metrology, Optical lithography, Polymers, Image processing, Manufacturing, Directed self assembly

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Proceedings Article | 1 April 2013 Paper

Deep ultraviolet out-of-band characterization of EUVL scanners and resists

Gian Lorusso, Tasaku Matsumiya, Jun Iwashita, Taku Hirayama, Eric Hendrickx

Proceedings Volume 8679, 86792V (2013) https://doi.org/10.1117/12.2011119

KEYWORDS: Deep ultraviolet, Photomasks, Aluminum, Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Semiconducting wafers, Reflectivity, Critical dimension metrology, Environmental monitoring

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Proceedings Article | 26 March 2013 Paper

Perpendicular orientation of block-co-polymer on controlled neutralization layer

Daiju Shiono, Tsuyoshi Kurosawa, Kenichiro Miyashita, Tasuku Matsumiya, Ken Miyagi, Katsumi Ohmori

Proceedings Volume 8680, 86801Q (2013) https://doi.org/10.1117/12.2011638

KEYWORDS: Surface roughness, Polymers, Coating, Atomic force microscopy, Scanning electron microscopy, Surface properties, Chemical analysis, Thin film coatings, Phase measurement, Directed self assembly

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Proceedings Article | 24 March 2006 Paper

Tri-layer resists process for fabricating 45-nm L&S patterns by EPL

Fumihiro Koba, Kazuyuki Matsumaro, Eiichi Soda, Tadayoshi Watanabe, Yoshihisa Matsubara, Hiroshi Arimoto, Tasuku Matsumiya, Daisuke Kawana, Naoki Yamashita, Yasushi Fujii, Katsumi Ohmori, Mitsuru Sato, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6151, 615127 (2006) https://doi.org/10.1117/12.655976

KEYWORDS: Photoresist processing, Failure analysis, Etching, Back end of line, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Photomasks

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In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we tried to fabricate sub 45-nm L&S (1:1) patterns using a conventional EPL single-layer resist process. There, the resolution of the EPL resist patterns turned out to be limited to 70 nm L&S (1:1) with aspect ratio (AR) of 3.3 which was caused by pattern collapse during the drying step in resist develop process. It has been common knowledge that pattern collapse of this type could be prevented by reducing the surface tension of the rinse-liquid and by decreasing the AR of the resist patterns. Therefore, we first applied a surfactant rinse to a single-layer resist process that could control the pattern collapse by its reduced surface tension. In this experiment, we used the ArF resist instead of the EPL resist because the surfactant that we were able to obtain was the one optimized to the ArF resist materials. From the results of ArF resist experiments, it was guessed that it was difficult for the EPL resist to obtain the L&S patterns with AR of 3.5 or more even if we used the surfactant optimized to the EPL resist. And we found that it was considerably difficult to form 45-nm L&S patterns with AR of 5.1 that was our target. Next, we evaluated a EPL tri-layer resist process to prevent pattern collapse by decreasing the AR of the resist patterns. Because in a tri-layer resist process the purpose of the top-layer resist is to transfer pattern to the middle-layer, a thinner top-layer resist was selected. By using the tri-layer resist process we were able to control the resist pattern collapse and thus were successful in achieving 40-nm L/S (1:1) top-layer resist patterns with AR of 2.3. The process also gave us 40-nm L&S (1:1) patterns after low-k film etching. And moreover, using our tri-layer resist process we were able to fabricate a wiring device with Cu/low-k. Although it was our first attempt, the process resulted in a high yield of 70 % for a 60-nm (1:1) wiring device. As a part of our study we conducted failure analysis of the results of our experiment. We found that the failures were located at the edge of the wafer and might originate in the bottom-layer pattern collapse. We thought that the wiring yield could be increased by control the bottom-layer pattern collapse. These findings indicated that our tri-layer resist process had a high applicability for device fabrication in BEOL.

Proceedings Article | 20 May 2004 Paper

Resist outgassing in electron projection lithography

Tasuku Matsumiya, Tomoyuki Ando, Masaaki Yoshida, Kiyoshi Ishikawa, Sumito Shimizu

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536168

KEYWORDS: Polymers, Electron beam lithography, Protactinium, Lithography, Electroluminescence, Projection lithography, Optical lithography, Semiconducting wafers, Neodymium, Electron beams

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Showing 5 of 7 publications

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