Dr. Stefan Schulz Profile

Dr. Stefan Schulz

at University College Cork

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 21 March 2023 Presentation

Carrier localization effects in c-plane (Al,Ga)N quantum wells

Stefan Schulz, Robert Finn

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646311

KEYWORDS: Quantum wells, Aluminum, Ultraviolet radiation, Optical properties, Light emitting diodes, Systems modeling, Semiconductors, Polarization, Optoelectronic devices, Magnetism

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Proceedings Article | 21 March 2023 Presentation

Effect of boron incorporation on the luminescence and structural properties of B xAl yGa 1-x-yN/AlGaN MQWs for UV emitters

Thomas O'Connor, Vitaly Zubialevich, Praveen Kumar, Miryam Arredondo-Arechavala, Stefan Schulz, Peter Parbrook

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648283

KEYWORDS: Luminescence, Boron, Ultraviolet radiation, Metalorganic chemical vapor deposition, Interfaces, Transmission electron microscopy, Sapphire, X-ray diffraction, Satellites, Quantum wells

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Proceedings Article | 14 March 2023 Presentation

III-N materials for UV light emitters: from atomistic structure to optical properties (Conference Presentation)

S. Schulz

Proceedings Volume PC12441, PC1244106 (2023) https://doi.org/10.1117/12.2647961

KEYWORDS: Ultraviolet radiation, Optical properties, Quantum wells, Light emitting diodes, Deep ultraviolet, Aluminum nitride, Systems modeling, Optoelectronic devices, Boron, Aluminum

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Proceedings Article | 2 March 2020 Paper

Multi-scale modeling of electronic, optical, and transport properties of III-N alloys and heterostructures

S. Schulz, D. Chaudhuri, M. O'Donovan, S. Patra, T. Streckenbach, P. Farrell, O. Marquardt, T. Koprucki

Proceedings Volume 11274, 1127416 (2020) https://doi.org/10.1117/12.2551055

KEYWORDS: Quantum wells, 3D modeling, Light emitting diodes, Gallium, Heterojunctions, Chemical species, Finite element methods, Gallium nitride

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Proceedings Article | 28 April 2017 Presentation

New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation)

Timothy Eales, Igor Marko, Seyed Ghetmiri, Wei Du, Yiyin Zhou, Shui-Qing Yu, Joe Margetis, John Tolle, Stefan Schulz, Edmond O’Halloran, Eoin O'Reilly, Stephen Sweeney

Proceedings Volume 10108, 101080F (2017) https://doi.org/10.1117/12.2252724

KEYWORDS: Current controlled current source, Tin, Electronics, Photonics, Germanium, Silicon photonics

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Proceedings Article | 8 March 2016 Paper

Development of semipolar (11-22) LEDs on GaN templates

B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. Humphreys, F. Brunner, M. Weyers, T. Meyer, L. Lymperakis

Proceedings Volume 9768, 97681G (2016) https://doi.org/10.1117/12.2204758

KEYWORDS: Light emitting diodes, Gallium nitride, Visible radiation, Sapphire, Chemical mechanical planarization, Surface finishing, Quantum wells, Semiconducting wafers, Polarization, Indium, Indium gallium nitride

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Proceedings Article | 16 March 2015 Paper

Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells

Stefan Schulz, O. Marquardt, C. Coughlan, M. Caro, O. Brandt, E. O'Reilly

Proceedings Volume 9357, 93570C (2015) https://doi.org/10.1117/12.2084800

KEYWORDS: Chemical species, Quantum wells, Electrons, Gallium, Systems modeling, Gallium nitride, Data modeling, Indium nitride, Physics, Optoelectronic devices

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Showing 5 of 7 publications

Conference Committee Involvement (2)

Physics and Simulation of Optoelectronic Devices XXXIII

28 January 2025 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXXII

30 January 2024 | San Francisco, California, United States

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