The spectral radiative properties of coherent thermal emission in the mid- and far-IR from two metal-semiconductor
resonating structures were demonstrated experimentally. Using an efficient implementation of Rigorous Coupled-Wave
Analysis, a truncated resonator was designed to selectively emit at mid-IR and far-IR wavelengths. A High Impulse
Power Magnetron Sputtering deposition technique was used to fabricate two Ag-Ge-Ag resonating structures with layer
thicknesses of 6-240-160 nm for one sample and 6-700-200 nm for the other. Reflectance measurements demonstrated
spectrally selective absorption at the designed mid- and far-IR wavelengths whose general behavior was largely
unaffected by a wide range of incident angles. Further, radiance measurements were taken at various high temperatures,
up to 601 K, where spectrally selective emission was achieved through wave interference effects due to thermally excited
surface waves. From these radiance measurements, spectral emittance was directly derived and compared to the
emittance inferred from reflectance measurements. It was established that inferring emittance through Kirchhoff’s law
can help to approximate the expected emission from a structure, but it is not an exact method of determining the actual
emittance of a thermal source at higher temperatures due to the temperature dependence of material parameters.
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