Mr. Shan-Wen Lin Profile

Shan-Wen Lin

Student at National Taipei University of Technology

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Proceedings Article | 2 November 2016 Presentation

Subwavelength resolution from multilayered structure (Conference Presentation)

Bo Han Cheng, Yi-Jun Jen, Wei-Chih Liu, Shan-wen Lin, Yung-Chiang Lan, Din Ping Tsai

Proceedings Volume 9929, 99290H (2016) https://doi.org/10.1117/12.2237791

KEYWORDS: Multilayers, Diffraction, Magnetism, Terahertz radiation, Finite element methods, Optoelectronic devices, Magnetic semiconductors, Semiconductors, Dielectrics, Metamaterials

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Breaking optical diffraction limit is one of the most important issues needed to be overcome for the demand of high-density optoelectronic components. Here, a multilayered structure which consists of alternating semiconductor and dielectric layers for breaking optical diffraction limitation at THz frequency region are proposed and analyzed. We numerically demonstrate that such multilayered structure not only can act as a hyperbolic metamaterial but also a birefringence material via the control of the external temperature (or magnetic field). A practical approach is provided to control all the diffraction signals toward a specific direction by using transfer matrix method and effective medium theory. Numerical calculations and computer simulation (based on finite element method, FEM) are carried out, which agree well with each other. The temperature (or magnetic field) parameter can be tuned to create an effective material with nearly flat isofrequency feature to transfer (project) all the k-space signals excited from the object to be resolved to the image plane. Furthermore, this multilayered structure can resolve subwavelength structures at various incident THz light sources simultaneously. In addition, the resolution power for a fixed operating frequency also can be tuned by only changing the magnitude of external magnetic field. Such a device provides a practical route for multi-functional material, photolithography and real-time super-resolution image.

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