Dr. Selmer S. Wong Profile

Dr. Selmer S. Wong

Program Manager at Univ of Arizona

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 29 August 2022 Presentation + Paper

Presentation + Paper

Status update on the NEO surveyor detector development

Gregory Zengilowski, Andre Wong, Selmer Wong, Amy Mainzer, Sean Carey, Ian Diaz Vachier, Meghan Dorn, Peter Eisenhardt, Mark Farris, Christopher Horne, Molly Janasik, Donald Lee, Jessica Maiten, Franco Masci, Craig McMurtry, Jianmei Pan, James Peterson, Judith Pipher, Nick Reilly, Lennon Reinhart, Michael Ressler, Kristin Ringhand, Jason Surace

Proceedings Volume 12191, 121911V (2022) https://doi.org/10.1117/12.2629660

KEYWORDS: Sensors, Quantum efficiency, Infrared radiation, Detector development, Defense and security, Long wavelength infrared, Infrared detectors, Signal detection, Optical sensors

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Proceedings Article | 15 June 2006 Paper

Paper

Detectors for the James Webb Space Telescope near infrared spectrograph (NIRSpec)

Bernard Rauscher, Torsten Böker, Craig Cabelli, Guido De Marchi, Pierre Ferruit, James Garnett, Robert Hill, Markus Loose, Michael Regan, Augustyn Waczynski, Yiting Wen, Selmer Wong, Majid Zandian, David Alexander, Clifford Brambora, Rebecca Derro, Carol Dunn, Timothy Ellis, Matthew Garrison, Bryan Howe, Peter Jakobsen, Thomas Johnson, Miriam Jurado, Ginn Lee, Sridhar Manthripragada, James Marsh, Cheryl Marshall, Robert Martineau, Brent Mott, John Nieznanski, Wayne Roher, Kamdin Shakoorzadeh, Miles Smith, Paolo Strada, Peter Wallis, Wei Xia-Serafino, James York

Proceedings Volume 6265, 626538 (2006) https://doi.org/10.1117/12.668489

KEYWORDS: James Webb Space Telescope, Sensors, Spectrographs, Staring arrays, Near infrared, Space telescopes, Silicon, Infrared sensors, Infrared telescopes, Cameras

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Proceedings Article | 19 August 2005 Paper

Paper

The SIDECAR ASIC: focal plane electronics on a single chip

Markus Loose, James Beletic, John Blackwell, James Garnett, Selmer Wong, Don Hall, Shane Jacobson, Marcia Rieke, Greg Winters

Proceedings Volume 5904, 59040V (2005) https://doi.org/10.1117/12.619638

KEYWORDS: Analog electronics, James Webb Space Telescope, Sensors, Electronics, Staring arrays, Cryogenics, Clocks, Cadmium sulfide, Denoising, Infrared radiation

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Proceedings Article | 12 October 2004 Paper

Paper

Detectors for the James Webb Space Telescope near-infrared spectrograph

Bernard Rauscher, Donald Figer, Michael Regan, Torsten Boeker, James Garnett, Robert Hill, Giorgio Bagnasco, Jesus Balleza, Richard Barney, Louis Bergeron, Clifford Brambora, Joe Connelly, Rebecca Derro, Michael DiPirro, Christina Doria-Warner, Aprille Ericsson, Stuart Glazer, Charles Greene, Donald Hall, Shane Jacobson, Peter Jakobsen, Eric Johnson, Scott Johnson, Carolyn Krebs, Danny Krebs, Scott Lambros, Blake Likins, Sridhar Manthripragada, Robert Martineau, Ernie Morse, Samuel Moseley, D. Brent Mott, Theo Muench, Hongwoo Park, Susan Parker, Elizabeth Polidan, Robert Rashford, Kamdin Shakoorzadeh, Rajeev Sharma, Paolo Strada, Augustyn Waczynski, Yiting Wen, Selmer Wong, John Yagelowich, Monica Zuray

Proceedings Volume 5487, (2004) https://doi.org/10.1117/12.549573

KEYWORDS: Sensors, James Webb Space Telescope, Staring arrays, Calibration, Spectrographs, Readout integrated circuits, Electronics, Detector development, Clocks, Mercury cadmium telluride

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Proceedings Article | 29 September 2004 Paper

Paper

Advanced technology trends for astronomy at Rockwell Scientific

Selmer Wong, Markus Loose, Eric Piquette, James Garnett, Majid Zandian, Mark Farris

Proceedings Volume 5499, (2004) https://doi.org/10.1117/12.553254

KEYWORDS: Sensors, Readout integrated circuits, Astronomy, Staring arrays, Quantum efficiency, Mercury cadmium telluride, Analog electronics, Near infrared, Field effect transistors, Infrared radiation

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Proceedings Article | 29 September 2004 Paper

Paper

2K X 2K molecular beam epitaxy HgCdTe detectors for the James Webb Space Telescope NIRCam instrument

James Garnett, Mark Farris, Selmer Wong, Majid Zandian, Donald Hall, Shane Jacobson, Gerard Luppino, Susan Parker, David Dorn, Steve Franka, Edward Freymiller, Stuart McMuldroch

Proceedings Volume 5499, (2004) https://doi.org/10.1117/12.553063

KEYWORDS: Sensors, James Webb Space Telescope, Mercury cadmium telluride, Staring arrays, Mid-IR, Detector arrays, Short wave infrared radiation, Quantum efficiency, Readout integrated circuits, Molecular beam epitaxy

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Proceedings Article | 5 August 2002 Paper

Paper

Advanced imaging sensors at Rockwell Scientific Company

John Montroy, James Garnett, Scott Cabelli, Markus Loose, Atul Joshi, Gary Hughes, Lester Kozlowski, Allan Haas, Selmer Wong, Majid Zandian, Annie Chen, John Pasko, Mark Farris, Craig Cabelli, Donald Cooper, Jose Arias, Jagmohan Bajaj, Kadri Vural

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478849

KEYWORDS: Sensors, Mercury cadmium telluride, Mid-IR, Optical sensors, Cameras, Imaging systems, Quantum efficiency, CMOS sensors, Image resolution, Infrared radiation

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Proceedings Article | 24 August 2001 Paper

Paper

Mechanism studies of scanning electron microscope measurement effects on 193-nm photoresists and the development of improved line-width measurement methods

T. Sarrubi, Matthew Ross, Mark Neisser, Thomas Kocab, Bernard Beauchemin, William Livesay, Selmer Wong, Waiman Ng

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436837

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Electron microscopes, Etching, Photoresist materials, Polymers, Photoresist developing, Chemistry, Carbon dioxide, Critical dimension metrology

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Proceedings Article | 23 June 2000 Paper

Paper

Process margin enhancement for 0.25-um metal etch process

Chung Lee, Wei Wen Ma, Eng Lim, Alex Cheng, Raymond Joy, Matthew Ross, Selmer Wong, Trey Marlowe

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388373

KEYWORDS: Etching, Electron beams, Semiconducting wafers, Photoresist processing, Metals, Scanning electron microscopy, Resistance, Refraction, Chemical analysis, FT-IR spectroscopy

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This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCure^TM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCure^TM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm². A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl₃ and Cl₂. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side-wall angles after etch. Only a slight improvement is observed in the isolated to dense bias effects of the etch process. Improved CD control is also achieved by applying the electron beam process, as more consistent CDs are observed after etch.

Proceedings Article | 23 June 2000 Paper

Paper

Characteristic study of electron beam stabilization for deep-UV photoresists

Myoung-Soo Kim, Jae-Hak Choi, Chi Rho, Min-Jong Hong, Bum-Jin Jun, Myung-Goon Gil, Bong-Ho Kim, Dong-Jun Ahn, Matthew Ross, Selmer Wong

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388365

KEYWORDS: Electron beams, Etching, Deep ultraviolet, Photoresist processing, Photoresist materials, Refraction, Semiconducting wafers, Metals, FT-IR spectroscopy, Chemical analysis

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Proceedings Article | 11 June 1999 Paper

Paper

Evaluation of stabilization techniques for ion implant processing

Matthew Ross, Selmer Wong, Jason Minter, Trey Marlowe, Mark Narcy, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350165

KEYWORDS: Ions, Electron beams, Photoresist processing, Photoresist materials, Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Picture Archiving and Communication System, FT-IR spectroscopy, Photography

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With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across several combinations of current and energy.

Proceedings Article | 11 June 1999 Paper

Paper

Comparative study of resist stabilization techniques for metal etch processing

Gerry Becker, Matthew Ross, Selmer Wong, Jason Minter, Trey Marlowe, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350164

KEYWORDS: Etching, Metals, Photoresist processing, Electron beams, Scanning electron microscopy, Plasma systems, Ultraviolet radiation, Photoresist materials, Plasma, Photography

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Proceedings Article | 11 June 1999 Paper

Paper

Evaluation of electron beam stabilization for ion implant processing

Stephen Buffat, Bee Kickel, B. Philipps, J. Adams, Matthew Ross, Jason Minter, Trey Marlowe, Selmer Wong

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350167

KEYWORDS: Semiconducting wafers, Photoresist materials, Electron beams, Deep ultraviolet, Ions, Photoresist processing, Scanning electron microscopy, Silicon, Oxides, Photomasks

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Proceedings Article | 11 June 1999 Paper

Paper

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

Jason Minter, Matthew Ross, William Livesay, Selmer Wong, Mark Narcy, Trey Marlowe

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350158

KEYWORDS: Photoresist materials, Electron beams, Floods, Metals, Photoresist developing, Plasma etching, Image processing, Picture Archiving and Communication System, Semiconducting wafers, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Paper

Low-temperature technique for thick film resist stabilization and curing

Jason Minter, Selmer Wong, Trey Marlowe, Matthew Ross, Mark Narcy, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350163

KEYWORDS: Electron beams, Photoresist processing, Photoresist materials, Statistical analysis, FT-IR spectroscopy, Chemical analysis, Scanning electron microscopy, Picture Archiving and Communication System, Refraction, Thin films

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Showing 5 of 15 publications

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