Ring resonator modulators reach high modulation efficiencies, are very compact and can be electrically driven as lumped elements. However, their limited optical bandwidth requires temperature stabilization, limiting their power efficiency. A novel ring assisted Mach-Zehnder modulator (MZM) aggressively reduces power consumption. Moreover, an integration scheme passively sets the 3 dB point during attachment of the input fiber relative to a multimode grating coupler used as the first splitter element of the interferometer. Straight phase shifters are replaced by arrays of highly overcoupled resonators maintaining a sufficiently high finesse and a substantial resonant enhancement while minimizing the excess losses at the resonator to waveguide junctions. A large resonance bandwidth compatible with thermal operation over 50 °C without dynamic compensation is obtained together with a factor larger than four in the reduction of power consumption relative to a conventional MZM.
Photonic Integrated Circuits (PIC) will change the fundamental paradigms for the design of multi-color laser engines for life sciences. Exemplified with flow cytometry (FCM), integrated optical technology for visible wavelengths will be shown to open a new spectrum of possibilities to control flow cell illumination patterns, such as the number of output spots, the spot size, and even complex patterns generated by interferometry. Integration of additional optical functions such as variable optical attenuation, wavelength division multiplexing or fast shutters adds value to the PIC. TOPTICA is demonstrating integration of PICs in present Multi-color Laser Engine (MLE) architectures. Multiple wavelengths (405nm, 488nm, 561nm, 640nm) are coupled free space into the chip, leveraging its beam steering COOLAC (Constant Optical Output Level Auto Calibration) technology for automatic realignment, thus overcoming the need of fiber input delivery. Once in the waveguide, the light can be redirected and shaped to a desired output pattern and pitch, reducing the need of discrete optical components. In this work, we will discuss the implementation of various building blocks in PIC technology for MLEs and analyze the advantages over current macroscopic counterparts.
High-speed silicon modulators based on the plasma effect in reverse-biased p(i)n junction phase shifters have been extensively investigated. The main challenge for such modulators is to maximize their modulation efficiency without compromising high-speed performance and insertion losses. Here, we propose a highly efficient silicon modulator based on a Mach-Zehnder Interferometer in which the doping profile of a vertical pin junction is precisely controlled by means of in-situ doping during silicon epitaxial growth. The precise level of control afforded by this fabrication procedure allows separately optimizing doping concentrations in the immediate vicinity of the junction and in surrounding electrical transport layers at the nanometric scale, enabling high performance levels. Free carrier absorption losses are minimized by implementing high carrier densities only in the waveguide regions where they benefit the most, i.e., in the immediate vicinity of the junction. Since these devices rely entirely on single crystal silicon, performance degradation caused by poor transport and high optical losses in poly- or amorphous silicon (as utilized in similar vertical phase shifter geometries such as semiconductor-insulator-semiconductor capacitive phase shifters) is avoided. Furthermore, unlike conventional plasma effect silicon phase shifters, the bandwidth of the proposed phase shifters is largely independent of the applied reverse voltage and the phase shift versus applied voltage is linearized, making them more suitable for complex modulation formats. The efficiency of the single ended phase shifters is expected to reach a VπL of 0.56 V•cm and absorption losses of α=4.5 dB/mm, a good performance metric for depletion-type modulators. Lumped element Mach-Zehnder Modulators as well as travelling-wave modulators with phase matching based on meandered waveguides have been designed and their RF characteristics simulated and optimized with Ansoft HFSS. First experiments have validated the growth of the epitaxial stack and complete devices are currently being fabricated.
We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical
carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon
Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye
diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the
link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA),
preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter
pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A
systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the
link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN
for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at
higher frequencies.
We report recent progress made in our laboratory on travelling wave Mach-Zehnder Interferometer based Silicon
Photonics modulators with segmented transmission lines, as well as on resonant ring modulators and add-drop
multiplexers with peaking enhanced bandwidth extended beyond the photon lifetime limit. In our segmented
transmission lines, microstructuring of the electrodes results in radio-frequency modes significantly deviating from the
transverse electromagnetic (TEM) condition and allows for additional design freedom to jointly achieve phase matching,
impedance matching and minimizing resistive losses. This technique was found to be particularly useful to achieve the
aforementioned objectives in simple back-end processes with one or two metallization layers. Peaking results from
intrinsic time dynamics in ring resonator based modulators and add-drop multiplexers and allows extending the
bandwidth of the devices beyond the limit predicted from the photon lifetime. Simple closed form expressions allow
incorporating peaking into system level modeling.
Hybrid integration of prefabricated III-V laser diodes with sub-micrometric silicon photonic waveguides suffers from a tradeoff between alignment tolerance and coupling efficiency. In this work, we demonstrate integrated coupling devices that substantially alleviate this problem by means of a balanced distribution of the laser power between two on-chip single mode SOI waveguides. With the reported coupling devices, a horizontal misalignment of the laser is converted in a variation of the relative phase of the light coupled into the two waveguides, allowing to satisfy the reciprocity principle while maintaining a high total coupling efficiency and a balanced power splitting. The relaxed alignment tolerances facilitate passive assembly of the lasers with pick-and-place tools. The balanced splitting of the power between waveguides is particularly well suited for optical interconnects with parallel transmitters. Here, the device design is discussed for both edge couplers and grating couplers relying on similar design principles. Furthermore, experimental characterization of edge-coupling structures with a lensed fiber and a Fabry-Pérot laser is presented. These devices have been fabricated with 193nm DUV optical lithography and are compatible with mainstream CMOS technology. The edge couplers with the best horizontal misalignment exhibits an excellent 1 dB loss horizontal misalignment range of 3.8 μm with excess insertion losses below 3.1 dB (in addition to the 3dB splitting). The back-reflection induced by the device has been assessed to be below -20 dB and measured relative intensity noise is better than measured from the same laser coupled to a lensed fiber.
In most integrated optics platforms device design is restricted to variations in the lateral dimensions, and a small set of etch depths. Sub-wavelength gratings (SWGs) in silicon-on-insulator enable engineering of refractive index in a wide range. SWGs exhibit a pitch smaller than the wavelength of light propagating through them, thereby suppressing diffraction and acting as a homogenous medium with an equivalent refractive index controlled by the duty-cycle. Here, we propose to not only engineer refractive index, but to control SWG dispersion. We use this concept to design ultra-broadband directional couplers (DCs) and multimode interference couplers (MMIs) with a fivefold bandwidth enhancement compared to conventional devices.
Silicon nitride (SiN) is a promising candidate material for becoming a standard high-performance solution for integrated
biophotonics applications in the visible spectrum. As a key feature, its compatibility with the complementary-oxidemetal-
semiconductor (CMOS) technology permits cost reduction at large manufacturing volumes that is particularly
advantageous for manufacturing consumables. In this work, we show that the back-end deposition of a thin SiN film
enables the large light-cladding interaction desirable for biosensing applications while the refractive index contrast of the
technology (Δn ≈ 0.5) also enables a considerable level of integration with reduced waveguide bend radii. Design and experimental validation also show that several advantages are derived from the moderate SiN/SiO2 refractive index contrast, such as lower scattering losses in interconnection waveguides and relaxed tolerances to fabrication
imperfections as compared to higher refractive index contrast material systems. As a drawback, a moderate refractive
index contrast also makes the implementation of compact grating couplers more challenging, due to the fact that only a
relatively weak scattering strength can be achieved. Thereby, the beam diffracted by the grating tends to be rather large
and consequently exhibit stringent angular alignment tolerances. Here, we experimentally demonstrate how a proper
design of the bottom and top cladding oxide thicknesses allows reduction of the full-width at half maximum (FWHM)
and alleviates this problem. Additionally, the inclusion of a CMOS-compatible AlCu/TiN bottom reflector further
decreases the FWHM and increases the coupling efficiency. Finally, we show that focusing grating designs greatly
reduce the device footprint without penalizing the device metrics.
Subwavelength gratings (SWG) are periodically segmented waveguides with a pitch small enough to suppress
diffraction. These waveguides can be engineered to implement almost any refractive between the refractive indices of
the material that compose the waveguide, thereby opening novel design possibilities. In this communication we explore
the use of SWGs in the design and optimization of a variety of integrated optical devices in the silicon-on-insulator
platform: fiber-to-chip grating couplers, polarization splitters and high performance multimode interference couplers.
We furthermore show that the dispersion properties of SWGs enable the design of novel filters, and discuss the design of
low transitions between SWG waveguides of different characteristics.
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