Cadmium Zinc Telluride (CdZnTe/CZT) crystals were grown using a modified vertical Bridgman growth technique with
10 % Zn concentration at Washington State University (WSU). Analyses of the effects of volume (vol.) %, number
density (cm-3), mean diameter (μm) of secondary phases (SPs) and thickness (mm) of the CZT crystals on single crystal
properties such as carrier mobility lifetime (μτe) and resistivity (ρ) were performed. Some correlations were observed
between μτe values of different CZT crystals and vol. %, number density, mean diameter of SPs and thickness of the
crystals. High μτe and lower SP vol. % values were obtained for the ingots grown with rapid cool down times and with
no intentional amounts of excess Te/Cd. For the selected samples, the effects of the SPs on the μτe values were
established for the SPs whose mean diameters were ≤4 μm and >4 μm. These studies indicate vol. % and mean diameter
of SPs are the important parameters for CZT crystal performance as a radiation detector.
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