Multi-beam writer endowed photomask manufacturers a freedom in curvilinear design without concern for photomask write time. However, a similar concern is now happening in edge-based Mask Process Correction (MPC). When curvilinear pattern gets MPC, the number of figures tend to increase dramatically and takes longer time to process, just like VSB writer experienced shot count and write time increase before. NuFlare Technology Inc. has been developing inline, pixel-based MPC software and hardware embedded on multi-beam writer. This paper describes how our inline, pixel-based MPC achieves pattern fidelity enhancement and zero additional turn-around-time at the same time.
Multi-beam mask writer MBM-1000 is developed for N5. It is designed to accomplish higher throughput than a singlebeam
VSB writer EBM-9500 at shot count higher than 500 G/pass, and write masks with low sensitivity resist to have
better CDU and patterning resolution. Product version of blanking aperture array (BAA) for MBM-1000 is fabricated
along with data transfer system to accomplish data rate of 300 Gbps. They have been integrated with writing control
software based on MBF format, a tool-specific format which handles any-angle pattern and polygon patterns. Writing
test without re-adjustment of beam current showed that exposure time control by BAA blanking is very stable, and linear
CD drift is less than 0.1 nm for 10 hours. Complex OPC pattern and ring pattern were printed on low-sensitivity pCAR
resist and showed good resolution to resolve 25 nm isolated line.
Over the last two decades, eBeam mask writers have added inline correction features. Particularly when minimum feature sizes on mask went below 100nm a decade ago, the need for more precision within a reasonable write time increased the demand for more corrections. Inline correction is better for turnaround time and throughput, but inline correction is computationally limited because it is unacceptable for computation to limit the machine write time.
Simultaneously, the same need for linearity correction, printability enhancement, and resilience to manufacturing variation has caused much innovation in offline mask data preparation and mask process correction. Typically, the writer performs inline correction for backscatter, fogging, loading, charging and thermal effects, but leaves <10μm effects to offline correction.
With multi-beam writers, the write time is independent of shape count. Any set of input shapes is rasterized to a set of arrays of equal sized pixels that are each independently dosed to write the desired shapes. Multi-beam writers also have a certain minimum write time that is required for writing even a very small number of simple shapes. This gives rise to the possibility of providing linearity correction features, even for the short-range effects as inline correction in the writer. Such inline correction has zero impact on throughput and turnaround time of mask making.
This paper introduces the GPU-accelerated inline linearity correction capability of the NuFlare MBM-1000 for the first time.
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