Mr. Reuven Falah Profile

Reuven Falah

at Applied Materials Ltd

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 5 April 2007 Paper

CAD-based line/space mix-up prevention for reticle metrology

Thomas Marschner, Maik Enger, Frank Ludewig, Reuven Falah, Sergey Latinsky, Ofer Lindman, Thomas Coleman

Proceedings Volume 6518, 65181W (2007) https://doi.org/10.1117/12.712523

KEYWORDS: Computer aided design, Scanning electron microscopy, Photomasks, Metrology, Reticles, Pattern recognition, Binary data, Solid modeling, Semiconducting wafers, Target recognition

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Proceedings Article | 5 April 2007 Paper

Advanced edge roughness measurement application for mask metrology

Thomas Marschner, Jan Richter, Uwe Dersch, Amit Moran, Ruthy Katz, David Chase, Reuven Falah, Thomas Coleman

Proceedings Volume 6518, 65181R (2007) https://doi.org/10.1117/12.712530

KEYWORDS: Photomasks, Line edge roughness, Computer aided design, Metrology, Signal processing, Critical dimension metrology, Line width roughness, Semiconducting wafers, Edge roughness, Scanning electron microscopy

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Proceedings Article | 9 November 2005 Paper

Advanced edge roughness measurement application for mask metrology

D. Chase, R. Kris, R. Katz, A. Tam, L. Gershtein, R. Falah, N. Wertsman

Proceedings Volume 5992, 59924N (2005) https://doi.org/10.1117/12.632439

KEYWORDS: Photomasks, Metrology, Edge roughness, Manufacturing, Reticles, Critical dimension metrology, Scanning electron microscopy, Integrated circuits, Line edge roughness, Photomask technology

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Proceedings Article | 17 December 2003 Paper

Aerial-image-based off-focus inspection: lithography process window analysis during mask inspection

Shirley Hemar, Reuven Falah, Anja Rosenbusch, Yuval Blumberg

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517815

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Reticles, Optical proximity correction, Critical dimension metrology, Lithography, Defect detection, Image enhancement, Printing

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The industry roadmap for IC manufacturing at design rules of 90nm and below foresees low k1-factor optical lithography at 193nm exposure wavelength. Aggressive model-based OPC are being used more and more frequently in order to achieve the extremely tight mask CD specifications required by 90nm technology node. State-of-the-art mask inspection is challenged to detect CD defects close to metrology resolution. Inspection of OPC is critical; OPC feature dimensions are usually near or below the resolution limits of mask exposure. In addition, chrome defects can be semitransparent and change the intensity of light on the wafer. In this paper aerial-image based mask inspection is investigated and presented. The concept inspects a given mask based on its aerial image with selected wafer exposure conditions, thus “finds only defect which will print”. This paradigm shift in mask inspection philosophy provides the unique opportunities of verifying and controlling the entire aerial image generated by the inspected mask. As reticle enhancement techniques like OPC are designed to enhance the aerial image of a mask, this concept offers a comprehensive way of inspecting these techniques. The inspection is shifted from detecting every single minor change on mask to detecting what on mask could possibly impact the printing image quality on the wafer. In this paper an advanced application of aerial-image based mask inspection is discussed in more detail. As a standard, the Aera193 uses the best-focus aerial image for defect detection. From HNA mask inspection it is a well-known fact, that shifting the inspection off-focus, can provide a more sensitive detection. In the csase of aerial-image based inspection, going off-focus can be compared with lithography exposure out of focus. In other words, the lithography process window will be taken into account for defect detection. This methodology provides additional important information ·Understand process window printability of defects detected at best-focus ·Detect additional defects, which may print at the borders of the process window. This information is of extreme value for wafer lithography and may help by decisions about lithography process and mask usage. Focus of the paper is to analyze the application of aerial image-based off-focus inspection. Advanced OPC test plates are used to analyze detection at best and off-focus. The inspection results are compared to actual wafer results. Wafer lithography benefit is discussed.

Proceedings Article | 28 August 2003 Paper

Inspection of aggressive OPC using aerial image-based mask inspection

Luke Hsu, Johnson Hung, Hong-Chang Hsieh, Anja Rosenbusch, Reuven Falah, Yuval Blumberg

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504058

KEYWORDS: Inspection, Optical proximity correction, Heads up displays, Lithium, Imaging systems, Airborne remote sensing

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Proceedings Article | 28 August 2003 Paper

Aerial-image based inspeciton of AAPSM for 193-nm lithography generation

Anja Rosenbusch, Shirley Hemar, Reuven Falah

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504060

KEYWORDS: Heads up displays, Inspection, Lithography, Photomasks, Phase shifting, Mask making, System identification

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Proceedings Article | 2 June 2003 Paper

CD uniformity control using aerial image-based mask inspection

Shirley Hemar, Anja Rosenbusch, Reuven Falah

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482815

KEYWORDS: Photomasks, Inspection, Critical dimension metrology, Defect detection, Lithography, Metrology, Optical lithography, Optics manufacturing, Semiconducting wafers, Process control

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Proceedings Article | 27 December 2002 Paper

Aerial-image-based inspection of binary (OPC) and embedded-attenuated PSM

Felix Chang, Chang-Cheng Hung, John Lin, Anja Rosenbusch, Reuven Falah, Shirley Hemar

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467767

KEYWORDS: Inspection, Reticles, Photomasks, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Binary data, Defect detection, Airborne remote sensing, Wafer-level optics

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Proceedings Article | 19 July 2000 Paper

Halftone PSM inspection sensitivity of OPC line/space pattern for 150-nm generation

Chun-Hung Wu, Jackie Cheng, David Wang, Clare Wu, Yair Eran, Reuven Falah, Wolfgang Staud

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392070

KEYWORDS: Inspection, Reticles, Optical proximity correction, Resolution enhancement technologies, Lithography, Photomasks, Wafer-level optics, Semiconductors, Manufacturing, Process control

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Proceedings Article | 19 July 2000 Paper

Impact of pattern proximity correction on die-to-database mask inspection

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Shirley Hamar, Neil Holmes, Andrew Hourd, Hartmut Kirsch, Andrew McArthur

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392071

KEYWORDS: Inspection, Photomasks, Reticles, Critical dimension metrology, Mask making, Databases, Computer aided design, Optical proximity correction, Defect detection, Resolution enhancement technologies

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Proceedings Article | 19 July 2000 Paper

In-line verification of linewidth uniformity for 0.18 and below: design rule reticles

TaiSheng Tan, Shen Kuo, Clare Wu, Reuven Falah, Shirley Hemar, Amikam Sade, Gidon Gottlib

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392035

KEYWORDS: Reticles, Critical dimension metrology, Photomasks, Process control, Inspection, Mask making, Lithography, Wafer-level optics, Manufacturing, Semiconductors

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Proceedings Article | 3 February 2000 Paper

Improvements to mask inspectability by use of pattern proximity correction

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Neil Holmes, Andrew Hourd, Andrew McArthur, Wolfgang Staud

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377109

KEYWORDS: Inspection, Reticles, Mask making, Photomasks, Critical dimension metrology, Image quality, Image enhancement, Computer aided design, Databases, Defect detection

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Proceedings Article | 30 December 1999 Paper

High-transmission PSM inspection sensitivity

Chunhung Wu, David Wang, Chien-Ming Wang, Li-Jui Chen, Shuo-Yen Chou, Clare Wu, Nathan Schumann, Reuven Falah, Wolfgang Staud

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373307

KEYWORDS: Inspection, Scattering, Optical proximity correction, Photomasks, Transmittance, Reticles, Glasses, Binary data, Critical dimension metrology, Phase shifts

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Showing 5 of 13 publications

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