InP-based single photon avalanche diodes (SPADs) have proven to be the most practical solution currently available
for many applications requiring high-performance photon counting at near-infrared wavelengths between 1.0 and 1.6
µm. We describe recent progress in the design, characterization, and modeling of InP-based SPADs, particularly with
respect to the dark count rate vs. photon detection efficiency metric of devices optimized for use at both 1.55 μm and
1.06 μm. In this context, we report for the first time dark count probabilities as low as 7 x 10-7 ns-1 for fiber-coupled
1.55 μm SPADs operated at 20% detection efficiency and 215 K. Additionally, because of the critical role played by
afterpulsing in limiting photon counting rates, we describe recent characterization of the dependence of afterpulsing
effects on SPAD operating conditions such as photon detection efficiency, repetition rate, and bias gate length.
Single photon detectors are key components for a wide range of applications in the near infrared (NIR) wavelength range between 1.0 and 1.7 μm. To achieve high performance single photon detection in the NIR wavelength range, single photon avalanche diodes (SPADs) based on the InGaAsP quarternary material system lattice-matched to InP are likely to provide the most appropriate solution in numerous situations. In this paper, we describe the design, characterization, and modeling of InGaAsP/InP avalanche diodes designed for single photon detection at wavelengths of 1.55 μm and 1.06 μm. Critical performance parameters of these SPADs, including dark count rate, photon detection efficiency, and afterpulsing have been studied both experimentally and theoretically. The models developed for the simulation of device performance provided good agreement with experimental results. The relationship between dark count rate and photon detection efficiency is investigated for 1.55 μm SPADs under gated mode operation and 1.06 μm SPADs under both gated mode and free-running operations. We also describe in detail the dependence of afterpulsing effects on numerous operating conditions.
For the detection of single photons at 1.06 μm, silicon-based single photon avalanche diodes (SPADs) used at shorter
wavelengths have very low single photon detection efficiency (~1 - 2%), while InP/InGaAs SPADs designed for
telecommunications wavelengths near 1.5 μm exhibit dark count rates that generally inhibit non-gated (free-running)
operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 μm, we have developed high
performance, large area (80 - 200 μm diameter) InP-based InGaAsP quaternary absorber SPADs optimized for
operation at 1.06 μm. We demonstrate dark count rates that are sufficiently low to allow for non-gated operation while
achieving detection efficiencies far surpassing those found for Si SPADs. At a detection efficiency of 10%, 80 μm
diameter devices exhibit dark count rates below 1000 Hz and photon counting rates exceeding 1 MHz when operated at
-40 °C.
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