Integrating active distributed feedback reflector monolithically to replace HR coating may help reduce the cost of chip fabrication. We present the design and fabrication of a SOA integrated electro-absorption DFB laser based on identical epitaxial layer with HR coating replaced by ADR. The optimized laser structure has a 100-μm ADR, a 160-μm DFB, a 100-μm EAM and a 250-μm SOA. The fabricated device has a threshold current around 40 mA with good single mode stability. With injection current from 40 mA to 100 mA in DFB region, the SMSR is all over 50 dB. The extinction ratio is over -20 dB at the maximum EA bias voltage of 4V. The 10Gb/s eye diagrams for BTB configuration achieve a dynamic extinction over 10 dB and SNR over 7 dB.
Semiconductor lasers emitting in the mid-infrared wavelength region are of particular importance since the strong absorption bands of several technologically and industrially relevant gas species are located in this range, such as CO, CH4, NH3 and HF. These lasers are generally required a low throshold current with good single mode operation for simple and accurate gas detection. GaSb-based semiconductor material is an ideal system for realizing this mid-infrared laser due to its narrow bandgap. In this paper, we present a new design of high performance single mode GaSb DBR laser based on high order slotted surface grating for gas detection. The 2D scattering matrix method combing with the time-domain travelling-wave model has been used for the optimization of slotted surface grating to enlarge the reflection and reduce the loss. The designed 2.3μm single mode GaSb surface-grating DBR laser has been predicted with a low threshold-current of about 8 mA and a slope efficiency of about 0.14 mW/mA. The laser scheme is of a single wafer growth, can be easily fabricated, and thus has great potential to realize cost effective with high reliability.
Directly modulated semiconductor lasers (DMLs) are important components as sources for short distance communication. In this paper, we present 1.3μm directly modulated lasers with high modulation bandwidth based on high-order slotted surface gratings. Such lasers are regrowth free, thus have the advantages of low cost and high reliability compared to the typical distributed feedback Bragg (DFB) lasers with buried gratings. The two dimensional (2D) scattering matrix method (SMM) combined with the time-domain travelling-wave model (TDTW) is employed for the analysis of the designed laser. By optimization of the grating parameters and cavity length, the slope efficiency about 0.35mW/mA and 3-dB-down frequency bandwidth higher than 41GHz have been achieved for a 250μm long high-order slotted surface grating laser.
In this paper, a single facet slotted Fabry-Perot (FP) laser is demonstrated to provide tunable, single mode operation and
has been monolithically integrated into a photonic integrated circuit (PIC) with semiconductor optical amplifiers and a
multimode interference coupler. These lasers are designed by incorporating slots into the ridge of traditional FP cavity
lasers to achieve single mode output, integrability and tunability. With the feature size of the slots around 1μm, standard
photolithographic techniques can be used in the fabrication of the devices. This provides a time and cost advantage in
comparison to ebeam or holographic lithography as used for defining gratings in distributed feedback (DFB) or
distrusted Bragg reflector (DBR) lasers, which are typically used in PICs. The competitive integrable single mode laser
also enables the PIC to be fabricated using only one epitaxial growth and one etch process as is done with standard FP
lasers. This process simplicity can reduce the cost and increase the yield.
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