As we reduce the emission wavelength of III-Nitride materials, and delve deeper into the UV region, the struggle to keep the material at a high internal quantum efficiency escalates. A reduction in the quantum confined Stark effect and an improvement in strain engineering are just two of the challenges that wurtzite boron nitride (wz-BN) could play a key role in. In this presentation, we investigate the possibility of incorporating wz-BN into ternary and quaternary multiple quantum wells serving as the active region for UV emitters. This work was funded by Science Foundation Ireland (IPIC and PIADs.)
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