LEDs on a GaN epitaxial wafer grown on a Si substrate were directly bonded on a Si-based circuit board by utilizing via holes. The via holes were etched by deep reactive ion etching (DRIE) on the Si side of the LED wafer. The un-doped GaN in the via holes was further removed by inductively-coupled-plasma reactive ion etching (ICP-RIE). Metal layers were then deposited on the via holes and annealed. We used lead-free solder to bond the n-GaN of LEDs to the n-electrodes on a metal-wire-patterned Si wafer. Characterization in terms of I-V, L-I curves, emission images and spectrum is reported.
GaN-based resonant-cavity light-emitting diode (RCLED) has a circular output beam with superior directionality than
conventional LED and has power scalability by using two-dimensional-array layout. In this work, blue RCLEDs with a
top reflector of approximately 50% reflectance were fabricated and characterized. An output power of more than 0.5 mW
per diode was achieved before packaging under room-temperature continuous-wave (CW) operation. The full width at
half maximum (FWHM) of the emission spectrum was approximately 3.5 and 4.5 nm for 10- and 20-μm-diameter
devices, respectively. And the peak wavelength as well as the FWHM remained stable at various currents and
temperatures.
Cr:forsterite (Cr:Mg2SiO4) single crystal fibers of diameter less than 100 μm were made for the first time to our knowledge. This novel fiber material will be used to make fiber light sources such as fiber lasers and broadband light sources for applications in biophotonics and optical communications. Cr:forsterite crystal has a broad emission spectrum ranging from 1.1 to 1.4 μm that traditional glass fibers or semiconductor light sources cannot offer. And fiber light sources are compact, efficient, maintenance-free and compatible with fiber-optic components potentially leading to new performance and functions. In this work, bulk Cr:forsterite crystal was melted, pulled and re-grown into a long fiber using laser heated pedestal growth (LHPG) technique. Single crystal rhombic structure was preserved and verified by Xray diffractometer. By using electron probe micro-analyzer, change in Cr dopant concentration and distribution profile for various fiber diameters and growth conditions was studied.
High power single-mode AlGaAs semiconductor lasers operating between 820 nm and 860 nm (SDL-5400 series diodes) have been successfully qualified for deployment in many free-space inter-satellite communication link programs. Traditionally these high power devices did not have sufficient bandwidth for direct high speed modulation because of large device and package parasitics. We have improved the device parasitics of the SDL-5430 laser diode, i.e. reduced the RC product, from 240 ps to about 40 ps. The initial measurements indicate that this device (SDL-5480) is suitable for high power optical inter-satellite link (OISL) applications at data rates greater than 1 Gbit/s. The preliminary life test indicates that the new device has better a reliability than the previous design.
Mario Dagenais, Si Cho, Ping-Hui Yeh, Stephen Fox, R. Prakasam, Peter Heim, Scott Merritt, C.-C. Lu, Vijayanand Vusirikala, Badri Gopalan, Suryaprasad Kareenahalli, Colin Wood
KEYWORDS: Optical amplifiers, Laser amplifiers, Semiconductor lasers, High power lasers, Semiconductors, High power fiber amplifiers, Near field optics, Semiconductor optical amplifiers, Near field, Gaussian beams
A normal incidence tapered laser amplifier is shown to produce more than 4.5 W optical power at 810 nm in a diffraction-limited beam. A new angled-facet tapered laser amplifier has demonstrated as much as 5 W optical power in a diffraction-limited beam at 810 nm with only a few mWs of coupled input power. Angled-facet laser amplifiers exhibit near-ideal Gaussian beam characteristics. More than 1.9 W CW is obtained in a 970 nm angled-facet tapered laser amplifier. A near-ideal beam quality factor M2 is obtained.
Recent progress on the monolithic integration of an index-guided single-lateral-mode preamplifier with a tapered semiconductor optical amplifier is reported. The suppression of the amplified spontaneous emission as a function of coupled input power and bias current is studied. With a coupled input power of only 1.2 mW, more than 1 W amplified output power is obtained at 810 nm, corresponding to 29-dB internal large-signal gain. The far-field pattern is dominated by a diffraction-limited single lobe. A new self-aligned dissipating grid, which improves the amplified- signal-to-total-output-power ratio from 72% to over 85%, is described.
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