In the early development stage of 32nm processes, identifying and isolating systematic defects
is critical to understanding the issues related to design and process interactions. Conventional
inspection methodologies using random review sampling on large defect populations do not provide
the information required to take accurate and quick corrective action. This paper demonstrates the
successful identification and isolation of systematic defects using a novel methodology that
combines Design Based Binning (DBB) and inline Defect Organizer (iDO). This new method of
integrating design and defect data produced actionable inspection data, resulting in fewer mask
revisions and reduced device development time.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.