Dr. Paul Saunier Profile

Dr. Paul Saunier

Senior Fellow at Qorvo Inc

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Author

Publications (5)

Proceedings Article | 30 November 2017 Paper

Fabrication and performances of pHEMT Ka-band 3-stage amplifiers for phased-array applications

Paul Saunier

Proceedings Volume 2250, 22508K (2017) https://doi.org/10.1117/12.2303325

KEYWORDS: Amplifiers, Ka band, Etching, Reactive ion etching, Semiconducting wafers, Gallium arsenide, Fabrication, Prototyping, Antennas, Instrument modeling

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Proceedings Article | 28 February 2008 Paper

Progress in GaN devices performances and reliability

P. Saunier, C. Lee, J. Jimenez, A. Balistreri, D. Dumka, H. Tserng, M. Kao, U. Chowdhury, P. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, M. Shur

Proceedings Volume 6894, 68941I (2008) https://doi.org/10.1117/12.765467

KEYWORDS: Reliability, Gallium nitride, Silicon carbide, Defense technologies, Piezoelectric effects, Semiconducting wafers, Gallium, Semiconductors, Gallium arsenide, Group II-VI semiconductors

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Proceedings Article | 19 August 1994 Paper

Fabrication and performances of pseudomorphic high-electron-mobility transistor (PHEMT) Ka-band three-stage amplifiers for phased-array applications

Paul Saunier, Hua Tserng

Proceedings Volume 2211, (1994) https://doi.org/10.1117/12.182992

KEYWORDS: Amplifiers, Ka band, Semiconducting wafers, Etching, Fabrication, Gallium arsenide, Prototyping, Antennas, Field effect transistors, Indium gallium arsenide

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Proceedings Article | 1 July 1991 Paper

High-efficiency Kaband monolithic pseudomorphic HEMT amplifier

Paul Saunier, Hua Tserng, Yung Kao

Proceedings Volume 1475, (1991) https://doi.org/10.1117/12.44483

KEYWORDS: Amplifiers, Field effect transistors, Heterojunctions, Ka band, Gallium arsenide, Telecommunications, Capacitors, Indium gallium arsenide, Indium, Metals

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Proceedings Article | 1 July 1991 Paper

Advances in power MMIC amplifier technology in space communications

Hua Tserng, Paul Saunier

Proceedings Volume 1475, (1991) https://doi.org/10.1117/12.44482

KEYWORDS: Amplifiers, Field effect transistors, Gallium arsenide, Microwave radiation, Transistors, X band, Aerospace engineering, Heterojunctions, Telecommunications, Instrument modeling

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