Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -< 4I11/2 Nd3+ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.
O. Nayfeh, B. Higa, B. Liu, P. Sims, C. Torres, B. Davidson, L. Lerum, H. Romero, M. Fahem, M. Lasher, R. Barua, A. deEscobar, J. Cothern, K. Simonsen, A. Ramirez, H. Banks, S. Carter, D. K. Gaskill, T. Reinecke
Defect qubits in silicon carbide are an emerging system for quantum information science and technology. It is important to passivate and protect the surface to preserve the particular defect configurations as well as to provide means to tune the opto-electronic properties via electronic or opto-electronic gating. In this work, we construct defect qubit device structures that integrate Indium-Tin-Oxide (ITO) electrodes and a thin atomic layer deposited (ALD) siliconoxide surface passivation. The devices are formed via 12C ion implantation and high temperature annealing of 4H and 6H silicon carbide. The process involves the integration of optically transparent indium tin oxide electrodes and a surface passivation film of silicon-oxide by atomic layer deposition. We find good contact is formed between ITO and SiC, and after complete processing, the measured broad-band photoluminescence (PL) with excitation at 785 nm in a scanning PL system is consistent with the formation of silicon vacancies. We find minimal change in the room temperature emission in regions beneath the ITO electrodes and the SiOx-SiC passivated surface. We evaluate the ability of an electric field to tune the optically detected magnetic resonance (ODMR) response of the qubit system by simulations of the spectrum with a modified spin Hamiltonian that considers the Stark Effect. We quantify the simulated strength of the electric-field tuning of the energy levels and ODMR response for the various identified spin 3/2 transitions of the silicon vacancy.
HgCdTe passivation process must be performed at low temperature in order to reduce Hg depletion. Low temperature
plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for thin highly conformal
films to meet the demand. Room temperature PE-ALD Al2O3 film's passivation on HgCdTe has been studied. Conformal
film was investigated through SEM images of the Al2O3 film deposited onto high aspect ratio features dry etched into
HgCdTe. Minority carrier lifetime was measured and compared by photoconductive decay transients of HgCdTe before
and after deposition. Room temperature ALD Al2O3 film increased the minority carrier lifetime of HgCdTe.
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