Dr. Nicolette S. Fender Profile

Dr. Nicolette S. Fender

Sr. Development Engineer at JSR Micro Inc

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Publications (11)

Proceedings Article | 19 March 2012 Paper

Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials

Sen Liu, Kuang-Jung Chen, Wu-Song Huang, Steven Holmes, Karen Huang, Nicolette Fender, Ranee Kwong, Brian Osborn, Cherry Tang, Chung-Hsi Wu, Mark Slezak

Proceedings Volume 8325, 83251B (2012) https://doi.org/10.1117/12.916158

KEYWORDS: Polymers, Reflectivity, Silicon, Semiconducting wafers, Bottom antireflective coatings, Lithography, Chromophores, Critical dimension metrology, Silicon films, Solids

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Proceedings Article | 16 April 2011 Paper

Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Proceedings Volume 7972, 79720G (2011) https://doi.org/10.1117/12.881489

KEYWORDS: Photoresist processing, Reactive ion etching, Lithography, Photomasks, Dielectrics, Etching, Scanning electron microscopy, Double patterning technology, Semiconductors, Optical lithography

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Proceedings Article | 30 March 2010 Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain

Stefan Harrer, John Arnold, Dario Goldfarb, Steven Holmes, Rex Chen, Cherry Tang, Mark Slezak, Nicolette Fender, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Shyng-Tsong Chen, Dave Horak, Yunpeng Yin, Rao Varanasi, Matthew Colburn

Proceedings Volume 7639, 763919 (2010) https://doi.org/10.1117/12.846593

KEYWORDS: Back end of line, Dielectrics, Etching, Lithography, Reactive ion etching, Photoresist materials, Optical lithography, Semiconducting wafers, Copper, Polishing

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A novel back-end-of-line (BEOL) patterning and integration process termed Multi-Level Multiple Exposure (MLME) technique is herein introduced. The MLME technique simplifies BEOL dual damascene (DD) integration while simultaneously being applicable to all BEOL levels. It offers a patterning resolution reaching into the sub-100nm region and improves semiconductor manufacturing cost and throughput. MLME employs a dual-layer imaging stack (via + trench resists) cast onto a customized etch transfer multilayer stack. This process implements a strict litho-litho-etch sequence for transferring the trench- and via-patterns into the dielectric layer. Under the MLME scheme, two imaging steps (i.e. via- and trench-level patterning) are executed consecutively followed by a dry etch process that transfers the lithographically-formed patterns into the customized etch transfer multilayer stack and further into the dielectric layer. The MLME integration scheme not only decreases the number of overall process steps for the full DD BEOL process but also eliminates several inter-tool wafer exchange sequences as performed in a conventional litho-etch-litho-etch process flow. All MLME process steps were demonstrated i.e. combined 193nm-dry dual-resist layer MLME via- and trench-lithography, full pattern transfer of via- and trench-patterns into the dielectric layer using reactive ion etching (RIE), as well as electroplating and polishing of the DD patterns. This paper provides a detailed description of both post-lithography steps of the DD process for a DD BEOL structure, i.e. (i) the RIE-pattern transfer process with the customized multilayer stack, and (ii) the metallization process completing the DD process for one BEOL layer. Furthermore, the integration capabilities of the MLME technique were demonstrated and characterized by generating an electrically functional via-chain connecting two neighboring BEOL layers fabricated by subsequently applying the MLME approach to both layers. An exhaustive description and evaluation of MLME lithographic patterning is given in an accompanying paper.

Proceedings Article | 26 March 2010 Paper

Process characterization of pitch-split resist materials for application at 16nm node

Steven Holmes, Cherry Tang, John Arnold, Yunpeng Yin, Rex Chen, Nicolette Fender, Brian Osborn, Gary Dabbagh, Sen Liu, Matthew Colburn, Rao Varanasi, Mark Slezak

Proceedings Volume 7639, 76392X (2010) https://doi.org/10.1117/12.846891

KEYWORDS: Lithography, Photoresist processing, Semiconducting wafers, Double patterning technology, Semiconductors, Photomasks, Reactive ion etching, Silicon, Scanning electron microscopy, Particles

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Proceedings Article | 26 March 2010 Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning

Dario Goldfarb, Stefan Harrer, John Arnold, Steven Holmes, Rex Chen, Cherry Tang, Nicolette Fender, Mark Slezak, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Roa Varanasi, Matthew Colburn

Proceedings Volume 7639, 76390I (2010) https://doi.org/10.1117/12.846443

KEYWORDS: Optical lithography, Einsteinium, Back end of line, Etching, Dielectrics, Semiconducting wafers, Lithography, Photoresist materials, Nanoimprint lithography, Reactive ion etching

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Proceedings Article | 4 December 2008 Paper

High Si content BARC for applications in dual BARC systems such as tri-layer patterning

Joseph Kennedy, Song-Yuan Xie, Ze-Yu Wu, Ron Katsanes, Kyle Flanigan, Kevin Lee, Mark Slezak, Nicolette Fender, Junichi Takahashi

Proceedings Volume 7140, 71402S (2008) https://doi.org/10.1117/12.804699

KEYWORDS: Etching, Plasma etching, Photoresist materials, Optical lithography, Plasma, Silicon, Lithography, Optical properties, Polymers, Scanning electron microscopy

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Proceedings Article | 24 July 2002 Paper

Aliphatic platforms for the design of 157-nm chemically amplified resists

Hiroshi Ito, Hoa Truong, Masaki Okazaki, Dolores Miller, Nicolette Fender, Gregory Breyta, Phillip Brock, Gregory Wallraff, Carl Larson, Robert Allen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474223

KEYWORDS: Polymers, Lithography, Data modeling, Polymerization, Fluorine, Spectroscopy, Chemically amplified resists, Absorbance, Photomasks, Systems modeling

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Proceedings Article | 24 July 2002 Paper

Characterization and acid diffusion measurements of new strong acid photoacid generators

Gregory Wallraff, Carl Larson, Nicolette Fender, Blake Davis, David Medeiros, Jeff Meute, William Lamanna, Mike Parent, T. Robeledo, Gregory Young

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474215

KEYWORDS: Polymers, Diffusion, Polymer thin films, Semiconducting wafers, Photoresist materials, Silicon, Temperature metrology, Absorbance, Laser phosphor displays, Chemically amplified resists

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Proceedings Article | 24 August 2001 Paper

Characterization of new aromatic polymers for 157-nm photoresist applications

Nicolette Fender, Phillip Brock, W. Chau, S. Bangsaruntip, Arpan Mahorowala, Gregory Wallraff, William Hinsberg, Carl Larson, Hiroshi Ito, Gregory Breyta, Kikue Burnham, Hoa Truong, P. Lawson, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436873

KEYWORDS: Polymers, Diffusion, Absorbance, Fluorine, Etching, Photoresist materials, Lithography, Silicon, Semiconducting wafers, Transparency

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Proceedings Article | 24 August 2001 Paper

Polymer design for 157-nm chemically amplified resists

Hiroshi Ito, Gregory Wallraff, Phillip Brock, Nicolette Fender, Hoa Truong, Gregory Breyta, Dolores Miller, Mark Sherwood, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436857

KEYWORDS: Polymers, Polymerization, Absorption, Chemically amplified resists, Ultraviolet radiation, Spectroscopy, Lithography, Fluorine, Opacity, Transparency

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Proceedings Article | 24 August 2001 Paper

Silicon-containing resists for 157-nm applications

Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Nicolette Fender, Gregory Wallraff, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436861

KEYWORDS: Polymers, Silicon, Lithography, Standards development, Polymer thin films, Absorbance, Etching, Semiconductor manufacturing, Resistance, Transparency

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Showing 5 of 11 publications

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