Dr. Neil Robertson Profile

Dr. Neil Robertson

Manager at HGST

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Proceedings Article | 21 March 2012 Paper

Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography

K. Patel, R. Ruiz, J. Lille, L. Wan, E. Dobiz, H. Gao, N. Robertson, T. Albrecht

Proceedings Volume 8323, 83230U (2012) https://doi.org/10.1117/12.916589

KEYWORDS: Lithography, Double patterning technology, Etching, Chromium, Optical lithography, Silicon, Reactive ion etching, Plasma, Beam propagation method, Directed self assembly

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Directed self-assembly is emerging as a promising technology to define sub-20nm features. However, a straightforward path to scale block copolymer lithography to single-digit fabrication remains challenging given the diverse material properties found in the wide spectrum of self-assembling materials. A vast amount of block copolymer research for industrial applications has been dedicated to polystyrene-b-methyl methacrylate (PS-b-PMMA), a model system that displays multiple properties making it ideal for lithography, but that is limited by a weak interaction parameter that prevents it from scaling to single-digit lithography. Other block copolymer materials have shown scalability to much smaller dimensions, but at the expense of other material properties that could delay their insertion into industrial lithographic processes. We report on a line doubling process applied to block copolymer patterns to double the frequency of PS-b-PMMA line/space features, demonstrating the potential of this technique to reach single-digit lithography. We demonstrate a line-doubling process that starts with directed self-assembly of PS-b-PMMA to define line/space features. This pattern is transferred into an underlying sacrificial hard-mask layer followed by a growth of self-aligned spacers which subsequently serve as hard-masks for transferring the 2x frequency doubled pattern to the underlying substrate. We applied this process to two different block copolymer materials to demonstrate line-space patterns with a half pitch of 11nm and 7nm underscoring the potential to reach single-digit critical dimensions. A subsequent patterning step with perpendicular lines can be used to cut the fine line patterns into a 2-D array of islands suitable for bit patterned media. Several integration challenges such as line width control and line roughness are addressed.

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