Montmorillonite (MMT) was first cation exchanged by cetyltrimethyl ammonium bromide (CTAB) and then treated by short chain silane (methyltrimethoxylsilane) or different amount of long chain silane (dodecyltrimethoxylsilane). High density polyethylene (HDPE)/clay nanocomposites were prepared through twin screw extruder using these silane modified clays without any compatibilizer. Thermal gravimetric analysis (TGA) proved the successful grafting of silanes onto clay. The effects of the chain length and content of the silanes on the dispersion state of clay and properties of the composites were studied using X-ray diffraction (XRD), transmission electron microscope (TEM), mechanical tests, creep tests and so on. The results indicate that the grafting of long chain silanes at higher content could improve the compatibility between clay and PE, thus more efficiently enhancing mechanical and creep properties of the composites than other silane treated clays.
We report the performance and reliability of a 1500 nm superluminescent diode fabricated using a post-growth quantum well intermixing technique. The one-step impurity induced quantum well intermixing technique incorporating ion implantation through graded-thickness implant mask pattern is utilized here. By thermally diffusing the vacancies through the structure to the QW region, we can obtain a differential bandgap energy shift across the wafer by an amount directly related to the implant mask thickness. We use this effect to broaden the full-width half maximum of the superluminescent diode. Output powers of multiple milliwatts with full-width half maximum larger than 90 nm and spectral modulation better than 0.2 dB have been achieved from ridge waveguide multiple quantum well structure. The superluminescent diode is able to operate up to 85°C showing good uncooled operation. The true inherent superluminescent mode operation of the superluminescent diode with full-width half maximum increases along with the increment of the current injection is also discussed. Accelerated aging at continuous constant current has been carried out at 70°C, 85°C and 100°C. The life test shows a very positive result, demonstrating that this QWI technique is reliable for fabricating active devices.
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