Mr. Matthew J. Sendelbach Profile

Matthew J. Sendelbach

Principal Process Engineer at TEL Technology Ctr America LLC

SPIE Involvement:

Conference Chair | Editor | Author

Websites:

Company Website

Publications (50)

Proceedings Article | 23 February 2021 Presentation

Contour metrology accuracy assessment using TMU analysis

Nivea Schuch, Mohamed Abaidi, Thiago Figueiro, Patrick Schiavone, Matthew Sendelbach

Proceedings Volume 11611, 1161114 (2021) https://doi.org/10.1117/12.2584617

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Proceedings Article | 2 July 2019 Presentation + Paper

Machine learning and hybrid metrology using scatterometry and LE-XRF to detect voids in copper lines

Dexin Kong, Koichi Motoyama, Abraham Arceo de la peña, Huai Huang, Brock Mendoza, Mary Breton, Gangadhara Raja Muthinti, Hosadurga Shobha, Liying Jiang, Juntao Li, James Demarest, John Gaudiello, Gauri Karve, Aron Cepler, Matthew Sendelbach, Susan Emans, Paul Isbester, Kavita Shah, Shay Wolfing, Avron Ger

Proceedings Volume 10959, 109590A (2019) https://doi.org/10.1117/12.2515257

KEYWORDS: Metrology, Machine learning, Scatterometry, Copper

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Proceedings Article | 25 June 2019 Open Access

Machine learning for predictive electrical performance using OCD (Erratum)

Sayantan Das, Joey Hung, Sandip Halder, Guillaume Schelcher, Roy Koret, Igor Turovets, Mohamed Saib, Anne-Laure Charley, Matthew Sendelbach, Avron Ger, Philippe Leray

Proceedings Volume 10959, 1095932 (2019) https://doi.org/10.1117/12.2541616

KEYWORDS: Machine learning, Metrology, Inspection, Process control, Optical lithography, Capacitance, Lithography

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Proceedings Article | 26 March 2019 Paper

Machine learning for predictive electrical performance using OCD

Sayantan Das, Joey Hung, Sandip Halder, Guillaume Schelcher, Roy Koret, Igor Turovets, Mohamed Saib, Anne-Laure Charley, Matthew Sendelbach, Avron Ger, Philippe Leray

Proceedings Volume 10959, 109590F (2019) https://doi.org/10.1117/12.2515806

KEYWORDS: Machine learning, Semiconducting wafers, Capacitance, Resistance, Critical dimension metrology, Etching, Process control, Diffractive optical elements, Oxides, Scatterometry

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Proceedings Article | 19 September 2018 Paper

Feasibility of monitoring a multiple e-beam tool using scatterometry and machine learning: stitching error detection

Guido Rademaker, Yoann Blancquaert, Thibault Labbaye, Lucie Mourier, Nivea Figueiro, Francisco Sanchez, Roy Koret, Jonathan Pradelles, Stéfan Landis, Stéphane Rey, Ronny Haupt, Barak Bringoltz, Michael Shifrin, Daniel Kandel, Avron Ger, Matthew Sendelbach, Shay Wolfling, Laurent Pain

Proceedings Volume 10775, 1077508 (2018) https://doi.org/10.1117/12.2326595

KEYWORDS: Machine learning, Scatterometry, Semiconducting wafers, Lithography, Metrology, Channel projecting optics, Wafer-level optics, Reflectance spectroscopy, Inverse optics, Electron beam direct write lithography, Maskless lithography

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Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.

Proceedings Article | 5 September 2018 Presentation + Paper

In-line characterization of non-selective SiGe nodule defects with scatterometry enabled by machine learning

Dexin Kong, Robin Chao, Mary Breton, Chi-chun Liu, Gangadhara Raja Muthinti, Soon-cheon Seo, Nicolas Loubet, Pietro Montanini, John Gaudiello, Veeraraghavan Basker, Aron Cepler, Susan Ng-Emans, Matthew Sendelbach, Itzik Kaplan, Gilad Barak, Daniel Schmidt, Julien Frougier

Proceedings Volume 10585, 1058510 (2018) https://doi.org/10.1117/12.2297377

KEYWORDS: Scatterometry, Semiconducting wafers, Scanning electron microscopy, Machine learning, Metrology, Data modeling, Scatter measurement, Mathematical modeling, Transmission electron microscopy, Field effect transistors

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As device scaling continues, controlling defect densities on the wafer becomes essential for high volume manufacturing (HVM). One type of defect, the non-selective SiGe nodule, becomes more difficult to control during SiGe epitaxy (EPI) growth for p-type field effect transistor (pFET) source and drain. The process window for SiGe EPI growth with low nodule density becomes extremely tight due to the shrinking of contact poly pitch (CPP). Any tiny process shift or incoming structure shift could introduce a high density of nodules, which could affect device performance and yield. The current defect inspection method has a low throughput, so a fast and quantitative characterization technique is preferred for measuring and monitoring this type of defect. Scatterometry is a fast and non-destructive in-line metrology technique. In this work, novel methods were developed to accurately and comprehensively measure the SiGe nodules with scatterometry information. Top-down critical dimension scanning electron microscopy (CD-SEM) images were collected and analyzed on the same location as scatterometry measurement for calibration. Machine learning (ML) algorithms are used to analyze the correlation between the raw spectra and defect density and area fraction. The analysis showed that the defect density and area fractions can be measured separately by correlating intensity variations. In addition to the defect density and area fraction, we also investigate a novel method – model-based scatterometry hybridized with machine learning capabilities – to quantify the average height of the defects along the sidewall of the gate. Hybridizing the machine learning method with the model-based one could also eliminate the possibility of misinterpreting the defect as some structural parameters. Furthermore, cross-sectional TEM and SEM measurement are used to calibrate the model-based scatterometry results. In this work, the correlation between the SiGe nodule defects and the structural parameters of the device is also studied. The preliminary result shows that there is strong correlation between the defect density and spacer thickness. Correlations between the defect density and the structural parameters provides useful information for process engineers to optimize the EPI growth process. With the advances in the scatterometry-based defect measurement metrology, we demonstrate such fast, quantitative, and comprehensive measurement of SiGe nodule defects can be used to improve the throughput and yield.

Proceedings Article | 19 March 2018 Presentation

Scatterometry for gate all around (GAA) technology enablement (Conference Presentation)

Anne-Laure Charley, Hans Mertens, Naoto Horiguchi , Philippe Leray, Nivea Figueiró, Matthew Sendelbach, Roy Koret, Avron Ger, Shay Wolfling

Proceedings Volume 10585, 1058505 (2018) https://doi.org/10.1117/12.2300972

KEYWORDS: Scatterometry, Nanowires, Gallium arsenide, Metrology, Silicon, Etching, Transmission electron microscopy, Logic, Heart

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Future of logic silicon extension lies at the heart of gate all around developments (1). Due to the increasing limitations in further FinFET flow extension, teams around the globe are researching with vertical and horizontal nanowires flavors. Horizontal NW are of great interest due to their integration similarity to the existing FinFET integration flow (2). This in turn allows to extend the usage of existing process and metrology platforms, and reduce the cost of shifting to a new technology. Even though the integration changes seem limited, it springs many new obstacle for fab metrology. New parameters of interest take place, and the metrology capability needs to reach higher performance, and develop new solution methods (3,4). The current paper will focus on one of the new rising metrology challenges, which exist at the nanowire release process step. The nanowire release step, a SiGe dummy layer is being removed by dry etching, to leave behind the active Silicon nanowires, for nfet device. A detailed metrology of these nanowire profile and thickness is required to verify the device can perform to the expected specifications. To examine the scatterometry performance at this application, a specific design of experiment was set, at multiple process step. at fin formation we begin with split condition, on the silicon-silicon germanium (Si-SiGe) multi layer deposition, where SiGe , are being varied between wafers, by increasing the SiGe layer thickness, thus different amount of SiGe material will be released (figure 1a). Scatterometry and X-ray reflectivity (XRR) are verifying this split condition (figure 1b). We continue with additional split condition for the fin reveal, allowing the lower SiGe layer to be more or less revealed to the SiGe release etching step (figure 2a). To confirm the fin height for the different splits condition we use atomic force microscope (AFM), and scatterometry (figure 2b). the last process DoE we report is the etching method in which the SiGe is released. The two etch methods, we address in this paper, provides different nanowire profile (figure 3), a circular or rectangular shapes, respectively. The last part of this paper will highlight how scatterometry nanowire profile accuracy, at the SiGe release step, is improved by incorporating the complete GAA steps scatterometry solutions, and the combination of Transmission electron microscopy (TEM) rich sampling.

Proceedings Article | 19 March 2018 Presentation

Novel hybrid metrology for process integration of gate all around (GAA) devices (Conference Presentation)

Gangadhara Muthinti, Nicolas Loubet, Robinhsinkuo Chao, Abraham Arceo De La Pena, Dexin Kong, Juntao Li, Brock Mendoza, Veeraraghavan Basker, Tenko Yamashita, John Gaudiello, Matthew Sendelbach, Aron Cepler, Susan Ng-Emans, Gilad Barak, Wei Ti Lee

Proceedings Volume 10585, 105850Z (2018) https://doi.org/10.1117/12.2297500

KEYWORDS: Metrology, Gallium arsenide, Etching, Silicon, Measurement devices, Geometrical optics, X-ray fluorescence spectroscopy, Semiconductors, Nanolithography

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Proceedings Article | 12 April 2017 Presentation + Paper

Electrical test prediction using hybrid metrology and machine learning

Mary Breton, Robin Chao, Gangadhara Raja Muthinti, Abraham de la Peña, Jacques Simon, Aron Cepler, Matthew Sendelbach, John Gaudiello, Susan Emans, Michael Shifrin, Yoav Etzioni, Ronen Urenski, Wei Ti Lee

Proceedings Volume 10145, 1014504 (2017) https://doi.org/10.1117/12.2261091

KEYWORDS: Copper, Metrology, Resistance, Machine learning, Metals, Back end of line, Semiconducting wafers, Scatterometry, X-rays, Process control

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Electrical test measurement in the back-end of line (BEOL) is crucial for wafer and die sorting as well as comparing intended process splits. Any in-line, nondestructive technique in the process flow to accurately predict these measurements can significantly improve mean-time-to-detect (MTTD) of defects and improve cycle times for yield and process learning. Measuring after BEOL metallization is commonly done for process control and learning, particularly with scatterometry (also called OCD (Optical Critical Dimension)), which can solve for multiple profile parameters such as metal line height or sidewall angle and does so within patterned regions. This gives scatterometry an advantage over inline microscopy-based techniques, which provide top-down information, since such techniques can be insensitive to sidewall variations hidden under the metal fill of the trench. But when faced with correlation to electrical test measurements that are specific to the BEOL processing, both techniques face the additional challenge of sampling. Microscopy-based techniques are sampling-limited by their small probe size, while scatterometry is traditionally limited (for microprocessors) to scribe targets that mimic device ground rules but are not necessarily designed to be electrically testable. A solution to this sampling challenge lies in a fast reference-based machine learning capability that allows for OCD measurement directly of the electrically-testable structures, even when they are not OCD-compatible. By incorporating such direct OCD measurements, correlation to, and therefore prediction of, resistance of BEOL electrical test structures is significantly improved. Improvements in prediction capability for multiple types of in-die electrically-testable device structures is demonstrated. To further improve the quality of the prediction of the electrical resistance measurements, hybrid metrology using the OCD measurements as well as X-ray metrology (XRF) is used. Hybrid metrology is the practice of combining information from multiple sources in order to enable or improve the measurement of one or more critical parameters. Here, the XRF measurements are used to detect subtle changes in barrier layer composition and thickness that can have second-order effects on the electrical resistance of the test structures. By accounting for such effects with the aid of the X-ray-based measurements, further improvement in the OCD correlation to electrical test measurements is achieved. Using both types of solution incorporation of fast reference-based machine learning on nonOCD-compatible test structures, and hybrid metrology combining OCD with XRF technology improvement in BEOL cycle time learning could be accomplished through improved prediction capability.

Proceedings Article | 31 March 2017 Paper

Materials characterization for process integration of multi-channel gate all around (GAA) devices

Gangadhara Raja Muthinti, Nicolas Loubet, Robin Chao, Abraham de la Peña, Juntao Li, Michael Guillorn, Tenko Yamashita, Sivananda Kanakasabapathy, John Gaudiello, Aron Cepler, Matthew Sendelbach, Susan Emans, Shay Wolfling, Avron Ger, Daniel Kandel, Roy Koret, Wei Ti Lee, Peter Gin, Kevin Matney, Matthew Wormington

Proceedings Volume 10145, 101451U (2017) https://doi.org/10.1117/12.2261377

KEYWORDS: Germanium, Silicon, Diffractive optical elements, Gallium arsenide, Semiconducting wafers, Etching, Solids, X-ray diffraction, X-ray fluorescence spectroscopy, Materials processing

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Proceedings Article | 28 March 2017 Paper

Scatterometry control for multiple electron beam lithography

Yoann Blancquaert, Nivea Figueiro, Thibault Labbaye, Francisco Sanchez, Stephane Heraud, Roy Koret, Matthew Sendelbach, Ralf Michel, Shay Wolfling, Stephane Rey, Laurent Pain

Proceedings Volume 10145, 101451F (2017) https://doi.org/10.1117/12.2261389

KEYWORDS: Optical metrology, Electron beam lithography, Scatterometry, Process control, Nanoimprint lithography, Critical dimension metrology, Extreme ultraviolet lithography, Optical lithography, Metrology, Inspection, Scatter measurement, Semiconducting wafers, Error analysis, Maskless lithography, Cadmium sulfide, Nano opto mechanical systems, Lithography

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Proceedings Article | 28 March 2017 Presentation + Paper

Hybrid scatterometry measurement for BEOL process control

Padraig Timoney, Alok Vaid, Byeong Cheol Kang, Haibo Liu, Paul Isbester, Marjorie Cheng, Susan Ng-Emans, Naren Yellai, Matt Sendelbach, Roy Koret, Oram Gedalia

Proceedings Volume 10145, 1014506 (2017) https://doi.org/10.1117/12.2261452

KEYWORDS: Scatterometry, Back end of line, Metrology, 3D metrology, 3D modeling, Dielectrics, Copper, Process control, Etching, Semiconducting wafers, Photomasks

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Scaling of interconnect design rules in advanced nodes has been accompanied by a reducing metrology budget for BEOL process control. Traditional inline optical metrology measurements of BEOL processes rely on 1-dimensional (1D) film pads to characterize film thickness. Such pads are designed on the assumption that solid copper blocks from previous metallization layers prevent any light from penetrating through the copper, thus simplifying the effective film stack for the 1D optical model. However, the reduction of the copper thickness in each metallization layer and CMP dishing effects within the pad, have introduced undesired noise in the measurement. To resolve this challenge and to measure structures that are more representative of product, scatterometry has been proposed as an alternative measurement. Scatterometry is a diffraction based optical measurement technique using Rigorous Coupled Wave Analysis (RCWA), where light diffracted from a periodic structure is used to characterize the profile. Scatterometry measurements on 3D structures have been shown to demonstrate strong correlation to electrical resistance parameters for BEOL Etch and CMP processes. However, there is significant modeling complexity in such 3D scatterometry models, in particlar due to complexity of front-end-of-line (FEOL) and middle-of-line (MOL) structures. The accompanying measurement noise associated with such structures can contribute significant measurement error. To address the measurement noise of the 3D structures and the impact of incoming process variation, a hybrid scatterometry technique is proposed that utilizes key information from the structure to significantly reduce the measurement uncertainty of the scatterometry measurement. Hybrid metrology combines measurements from two or more metrology techniques to enable or improve the measurement of a critical parameter. In this work, the hybrid scatterometry technique is evaluated for 7nm and 14nm node BEOL measurements of interlayer dielectric (ILD) thickness, hard mask thickness and dielectric trench etch in complex 3D structures. The data obtained from the hybrid scatterometry technique demonstrates stable measurement precision, improved within wafer and wafer to wafer range, robustness in cases where 3D scatterometry measurements incur undesired shifts in the measurements, accuracy as compared to TEM and correlation to process deposition time. Process capability indicator comparisons also demonstrate improvement as compared to conventional scatterometry measurements. The results validate the suitability of the method for monitoring of production BEOL processes.

Proceedings Article | 28 March 2017 Presentation + Paper

Complex metrology on 3D structures using multi-channel OCD

Taher Kagalwala, Sridhar Mahendrakar, Alok Vaid, Paul Isbester, Aron Cepler, Charles Kang, Naren Yellai, Matthew Sendelbach, Mihael Ko, Ovadia Ilgayev, Yinon Katz, Lilach Tamam, Ilya Osherov

Proceedings Volume 10145, 101451C (2017) https://doi.org/10.1117/12.2261419

KEYWORDS: 3D metrology, Metrology, Thin films, Process control, Scatterometry, Thin film devices, Semiconducting wafers, Photomasks, Chemical species, Dielectrics, Transmission electron microscopy, Diffractive optical elements, Solids, Channel projecting optics, Etching

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Proceedings Article | 28 March 2017 Paper

Application of advanced hybrid metrology method to nanoimprint lithography

Ilya Osherov, Limor Issacharoff, Oram Gedalia, Koichi Wakamoto, Matthew Sendelbach, Masafumi Asano

Proceedings Volume 10145, 101451X (2017) https://doi.org/10.1117/12.2266577

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Metrology, Scatterometry, Lithography, Scatter measurement, Critical dimension metrology, Semiconductors, Optical lithography, Quality measurement, Scanning electron microscopy, 3D modeling

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Proceedings Article | 30 March 2016 Paper

Advanced in-line metrology strategy for self-aligned quadruple patterning

Robin Chao, Mary Breton, Benoit L'herron, Brock Mendoza, Raja Muthinti, Florence Nelson, Abraham De La Pena, Fee li Le, Eric Miller, Stuart Sieg, James Demarest, Peter Gin, Matthew Wormington, Aron Cepler, Cornel Bozdog, Matthew Sendelbach, Shay Wolfling, Tom Cardinal, Sivananda Kanakasabapathy, John Gaudiello, Nelson Felix

Proceedings Volume 9778, 977813 (2016) https://doi.org/10.1117/12.2220601

KEYWORDS: Critical dimension metrology, Metrology, Transmission electron microscopy, Optical lithography, Semiconducting wafers, Etching, Process control, Scatterometry, Reactive ion etching, Diffractive optical elements

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Self-Aligned Quadruple Patterning (SAQP) is a promising technique extending the 193-nm lithography to manufacture structures that are 20nm half pitch or smaller. This process adopts multiple sidewall spacer image transfers to split a rather relaxed design into a quarter of its original pitch. Due to the number of multiple process steps required for the pitch splitting in SAQP, the process error propagates through each deposition and etch, and accumulates at the final step into structure variations, such as pitch walk and poor critical dimension uniformity (CDU). They can further affect the downstream processes and lower the yield. The impact of this error propagation becomes significant for advanced technology nodes when the process specifications of device design CD requirements are at nanometer scale. Therefore, semiconductor manufacturing demands strict in-line process control to ensure a high process yield and improved performance, which must rely on precise measurements to enable corrective actions and quick decision making for process development. This work aims to provide a comprehensive metrology solution for SAQP.

During SAQP process development, the challenges in conventional in-line metrology techniques start to surface. For instance, critical-dimension scanning electron microscopy (CDSEM) is commonly the first choice for CD and pitch variation control. However, it is found that the high aspect ratio at mandrel level processes and the trench variations after etch prevent the tool from extracting the true bottom edges of the structure in order to report the position shift. On the other hand, while the complex shape and variations can be captured with scatterometry, or optical CD (OCD), the asymmetric features, such as pitch walk, show low sensitivity with strong correlations in scatterometry. X-ray diffraction (XRD) is known to provide useful direct measurements of the pitch walk in crystalline arrays, yet the data analysis is influenced by the incoming geometry and must be used carefully.

A successful implementation of SAQP process control for yield improvement requires the metrology issues to be addressed. By optimizing the measurement parameters and beam configurations, CDSEM measurements distinguish each of the spaces corresponding to the upstream mandrel processes and report their CDs separately to feed back to the process team for the next development cycle. We also utilize the unique capability in scatterometry to measure the structure details in-line and implement a “predictive” process control, which shows a good correlation between the “predictive” measurement and the cross-sections from our design of experiments (DOE). The ability to measure the pitch walk in scatterometry was also demonstrated. This work also explored the frontier of in-line XRD capability by enabling an automatic RSM fitting on tool to output pitch walk values. With these advances in metrology development, we are able to demonstrate the impacts of in-line monitoring in the SAQP process, to shorten the patterning development learning cycle to improve the yield.

Proceedings Article | 29 March 2016 Paper

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)

Raja Muthinti, Nicolas Loubet, Robin Chao, John Ott, Michael Guillorn, Nelson Felix, John Gaudiello, Parker Lund, Aron Cepler, Matthew Sendelbach, Oded Cohen, Shay Wolfling, Cornel Bozdog, Mark Klare

Proceedings Volume 9778, 977810 (2016) https://doi.org/10.1117/12.2220379

KEYWORDS: Nanowires, Silicon, Germanium, Metrology, Gallium arsenide, Optical lithography, Scatterometry, Metals, Semiconducting wafers, Multilayers

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Proceedings Article | 24 March 2016 Paper

Hybrid enabled thin film metrology using XPS and optical

Alok Vaid, Givantha Iddawela, Sridhar Mahendrakar, Michael Lenahan, Mainul Hossain, Padraig Timoney, Abner Bello, Cornel Bozdog, Heath Pois, Wei Ti Lee, Mark Klare, Michael Kwan, Byung Cheol Kang, Paul Isbester, Matthew Sendelbach, Naren Yellai, Prasad Dasari, Tom Larson

Proceedings Volume 9778, 97780M (2016) https://doi.org/10.1117/12.2220299

KEYWORDS: Metrology, Thin films, X-rays, X-ray optics, Semiconducting wafers, Wafer-level optics, Process control, Ellipsometry, Diffractive optical elements, Deposition processes, Optical testing, Dielectrics, Optical properties

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SPIE Journal Paper | 26 June 2015 Open Access

Special Section Guest Editorial: Control of IC Patterning Variance Part 1: Metrology, Process Monitoring, and Control of Critical Dimension

Alexander Starikov, Matthew Sendelbach

JM3, Vol. 14, Issue 02, 021101, (June 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021101

KEYWORDS: Process control, Metrology, Critical dimension metrology, Electron beam lithography, Optical lithography, Optical proximity correction, Scanning electron microscopy, Calibration, Device simulation, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Scatterometry-based defect detection for DSA in-line process control

Robin Chao, Chi-Chun Liu, Cornel Bozdog, Aron Cepler, Matthew Sendelbach, Oded Cohen, Shay Wolfling, Todd Bailey, Nelson Felix

Proceedings Volume 9424, 942419 (2015) https://doi.org/10.1117/12.2087093

KEYWORDS: Defect detection, Scatterometry, Semiconducting wafers, Scanning electron microscopy, Process control, Inspection, Metrology, Optical lithography, Image analysis, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Improved scatterometry time-to-solution using virtual reference

Alok Vaid, Givantha Iddawela, Jamie Tsai, Gilad Wainreb, Paul Isbester, Byung Cheol (Charles) Kang, Michael Klots, Yinon Katz, Cornel Bozdog, Matt Sendelbach

Proceedings Volume 9424, 94240X (2015) https://doi.org/10.1117/12.2087232

KEYWORDS: Scatterometry, Metrology, Data modeling, Etching, Time metrology, Silicon, Model-based design, Transmission electron microscopy, Geometrical optics

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SPIE Journal Paper | 19 December 2014

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Matthew Sendelbach, Niv Sarig, Koichi Wakamoto, Hyang Kyun (Helen) Kim, Paul Isbester, Masafumi Asano, Kazuto Matsuki, Carmen Osorio, Chas Archie

JM3, Vol. 13, Issue 04, 041414, (December 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041414

KEYWORDS: Metrology, Transmission electron microscopy, Statistical analysis, Semiconducting wafers, Error analysis, Manufacturing, Scatterometry, Semiconductors, Uncertainty analysis, Quality measurement

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SPIE Journal Paper | 8 December 2014

Hybrid metrology co-optimization of critical dimension scanning electron microscope and optical critical dimension

Alok Vaid, Carmen Osorio, Jamie Tsai, Cornel Bozdog, Matthew Sendelbach, Eyal Grubner, Roy Koret, Shay Wolfling

JM3, Vol. 13, Issue 04, 041413, (December 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041413

KEYWORDS: Critical dimension metrology, Metrology, Semiconducting wafers, Scanning electron microscopy, Electron microscopes, Image analysis, Modulation, Diffractive optical elements, Data modeling

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SPIE Journal Paper | 6 November 2014

Hybrid metrology: from the lab into the fab

Alok Vaid, Alexander Elia, Givantha Iddawela, Cornel Bozdog, Matthew Sendelbach, Byungcheol Kang, Paul Isbester, Shay Wolfling

JM3, Vol. 13, Issue 04, 041410, (November 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041410

KEYWORDS: Line edge roughness, Metrology, Scatterometry, Data modeling, Semiconducting wafers, Critical dimension metrology, Photoresist materials, Transmission electron microscopy, Etching, Scatter measurement

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Proceedings Article | 2 April 2014 Paper

Hybrid metrology universal engine: co-optimization

Alok Vaid, Carmen Osorio, Jamie Tsai, Cornel Bozdog, Matthew Sendelbach, Eyal Grubner, Roy Koret, Shay Wolfling

Proceedings Volume 9050, 905009 (2014) https://doi.org/10.1117/12.2048939

KEYWORDS: Semiconducting wafers, Metrology, Image analysis, Critical dimension metrology, Diffractive optical elements, Modulation, Scanning electron microscopy, Model-based design, Detection and tracking algorithms

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Proceedings Article | 2 April 2014 Paper

Impact of shrinking measurement error budgets on qualification metrology sampling and cost

Matthew Sendelbach, Niv Sarig, Koichi Wakamoto, Hyang Kyun (Helen) Kim, Paul Isbester, Masafumi Asano, Kazuto Matsuki, Alok Vaid, Carmen Osorio, Chas Archie

Proceedings Volume 9050, 90501M (2014) https://doi.org/10.1117/12.2048933

KEYWORDS: Metrology, Transmission electron microscopy, Statistical analysis, Error analysis, Semiconducting wafers, Scatterometry, Semiconductors, Statistical modeling, Calibration, Measurement devices

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Proceedings Article | 13 May 2013 Paper

Mueller matrix characterization using spectral reflectometry

Dror Shafir, Gilad Barak, Michal Yachini, Matthew Sendelbach, Cornel Bozdog, Shay Wolfling

Proceedings Volume 8789, 878903 (2013) https://doi.org/10.1117/12.2022549

KEYWORDS: Metrology, Polarization, Reflectometry, Reflectivity, Ellipsometry, Light scattering, Critical dimension metrology, Scattering, Signal to noise ratio, Scatterometry

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Proceedings Article | 10 April 2013 Paper

Implementation of hybrid metrology at HVM fab for 20nm and beyond

Alok Vaid, Lokesh Subramany, Givantha Iddawela, Carl Ford, John Allgair, Gaurav Agrawal, John Taylor, Carsten Hartig, Byung Cheol (Charles) Kang, Cornel Bozdog, Matthew Sendelbach, Paul Isbester, Limor Issascharoff

Proceedings Volume 8681, 868103 (2013) https://doi.org/10.1117/12.2012339

KEYWORDS: Metrology, Semiconducting wafers, Critical dimension metrology, Transmission electron microscopy, Etching, Process control, Reactive ion etching, Data modeling, High volume manufacturing

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Proceedings Article | 10 April 2013 Paper

Hybrid approach to optical CD metrology of directed self-assembly lithography

Stephane Godny, Masafumi Asano, Akiko Kawamoto, Koichi Wakamoto, Kazuto Matsuki, Cornel Bozdog, Matthew Sendelbach, Igor Turovets, Ronen Urenski, Renan Milo

Proceedings Volume 8681, 86812D (2013) https://doi.org/10.1117/12.2012660

KEYWORDS: Metrology, Critical dimension metrology, Scanning transmission electron microscopy, Semiconducting wafers, Lithography, Polymers, Process control, Chemical elements, Geometrical optics, Directed self assembly

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Proceedings Article | 4 April 2012 Paper

Hybrid metrology solution for 1X-node technology

Alok Vaid, Alexander Elia, Mark Kelling, John Allgair, Carsten Hartig, Peter Ebersbach, Erin McLellan, Matthew Sendelbach, Nedal Saleh, Narender Rana, Hiroki Kawada, Toru Ikegami, Masahiko Ikeno, Takahiro Kawasaki, Cornel Bozdog, Helen Kim, Elad Arnon, Roy Koret, Igor Turovets

Proceedings Volume 8324, 832404 (2012) https://doi.org/10.1117/12.916940

KEYWORDS: Line edge roughness, Scatterometry, Data modeling, Metrology, Critical dimension metrology, Metals, Semiconducting wafers, Extreme ultraviolet, Scatter measurement

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SPIE Journal Paper | 1 October 2011

Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin McLellan, Charles Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

JM3, Vol. 10, Issue 04, 043016, (October 2011) https://doi.org/10.1117/12.10.1117/1.3655726

KEYWORDS: Metrology, Scatterometry, Critical dimension metrology, Semiconducting wafers, Data modeling, Atomic force microscopy, Transmission electron microscopy, Inspection, 3D metrology

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Proceedings Article | 20 April 2011 Paper

A holistic metrology approach: multi-channel scatterometry for complex applications

Cornel Bozdog, Hyang Kyun Kim, Susan Emans, Boris Sherman, Igor Turovets, Ronen Urensky, Boaz Brill, Alok Vaid, Matthew Sendelbach

Proceedings Volume 7971, 797113 (2011) https://doi.org/10.1117/12.881638

KEYWORDS: Etching, Scatterometry, Channel projecting optics, Metrology, Data modeling, Polarization, Optics manufacturing, Metals, Semiconducting wafers

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Proceedings Article | 29 March 2011 Paper

A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Chas Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Proceedings Volume 7971, 797103 (2011) https://doi.org/10.1117/12.881632

KEYWORDS: Metrology, Critical dimension metrology, Scatterometry, Semiconducting wafers, Metals, Transmission electron microscopy, Data modeling, Atomic force microscopy, Inspection

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SPIE Journal Paper | 1 October 2010

Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry targets

Alok Vaid, Matthew Sendelbach, Daniel Moore, Timothy Brunner, Nelson Felix, Pawan Rawat, Cornel Bozdog, Hyang Kyun Kim, Michael Sendler, Stanislav Stepanov, Victor Kucerov

JM3, Vol. 9, Issue 04, 041306, (October 2010) https://doi.org/10.1117/12.10.1117/1.3514707

KEYWORDS: Scatterometry, Semiconducting wafers, Optical properties, Critical dimension metrology, Optical testing, Finite element methods, Diffractive optical elements, Lithography, Data modeling, Metrology

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Proceedings Article | 2 April 2010 Paper

Use of multiple azimuthal angles to enable advanced scatterometry applications

Matthew Sendelbach, Alok Vaid, Pedro Herrera, Ted Dziura, Michelle Zhang, Arun Srivatsa

Proceedings Volume 7638, 76381G (2010) https://doi.org/10.1117/12.846692

KEYWORDS: Metals, Scatterometry, Silicon, Transmission electron microscopy, Metrology, Semiconducting wafers, Critical dimension metrology, Data modeling, Back end of line, Semiconductors

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Proceedings Article | 2 April 2010 Paper

Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry gratings

Alok Vaid, Matthew Sendelbach, Daniel Moore, Timothy Brunner, Nelson Felix, Pawan Rawat, Cornel Bozdog, Helen Kim, Michael Sendler, Stanislav Stepanov, Victor Kucerov

Proceedings Volume 7638, 76381H (2010) https://doi.org/10.1117/12.846648

KEYWORDS: Scatterometry, Finite element methods, Semiconducting wafers, Optical properties, Critical dimension metrology, Diffractive optical elements, Metrology, Data modeling, Optical testing, Scatter measurement

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Proceedings Article | 24 March 2009 Paper

Monitoring measurement tools: new methods for driving continuous improvements in fleet measurement uncertainty

Eric Solecky, Chas Archie, Matthew Sendelbach, Ron Fiege, Mary Zaitz, Dmitriy Shneyder, Carlos Strocchia-rivera, Andres Munoz, Srinivasan Rangarajan, William Muth, Andrew Brendler, Bill Banke, Bernd Schulz, Carsten Hartig, Jon-Tobias Hoeft, Alok Vaid, Mark Kelling, Benjamin Bunday, John Allgair

Proceedings Volume 7272, 72721H (2009) https://doi.org/10.1117/12.814089

KEYWORDS: Semiconducting wafers, Metrology, Scatterometry, Process control, Calibration, Manufacturing, Overlay metrology, Time metrology, Atomic force microscopy

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Ever shrinking measurement uncertainty requirements are difficult to achieve for a typical metrology toolset, especially over the entire expected life of the fleet. Many times, acceptable performance can be demonstrated during brief evaluation periods on a tool or two in the fleet. Over time and across the rest of the fleet, the most demanding processes often have measurement uncertainty concerns that prevent optimal process control, thereby limiting premium part yield, especially on the most aggressive technology nodes. Current metrology statistical process control (SPC) monitoring techniques focus on maintaining the performance of the fleet where toolset control chart limits are derived from a stable time period. These tools are prevented from measuring product when a statistical deviation is detected. Lastly, these charts are primarily concerned with daily fluctuations and do not consider the overall measurement uncertainty. It is possible that the control charts implemented for a given toolset suggest a healthy fleet while many of these demanding processes continue to suffer measurement uncertainty issues. This is especially true when extendibility is expected in a given generation of toolset. With this said, there is a need to continually improve the measurement uncertainty of the fleet until it can no longer meet the needed requirements at which point new technology needs to be entertained. This paper explores new methods in analyzing existing SPC monitor data to assess the measurement performance of the fleet and look for opportunities to drive improvements. Long term monitor data from a fleet of overlay and scatterometry tools will be analyzed. The paper also discusses using other methods besides SPC monitors to ensure the fleet stays matched; a set of SPC monitors provides a good baseline of fleet stability but it cannot represent all measurement scenarios happening in product recipes. The analyses presented deal with measurement uncertainty on non-measurement altering metrology toolsets such as scatterometry, overlay, atomic force microscopy (AFM) or thin film tools. The challenges associated with monitoring toolsets that damage the sample such as the CD-SEMs will also be discussed. This paper also explores improving the monitoring strategy through better sampling and monitor selection. The industry also needs to converge regarding the metrics used to describe the matching component of measurement uncertainty so that a unified approach is reached regarding how to best drive the much needed improvements. In conclusion, there will be a discussion on automating these new methods3,4 so they can complement the existing methods to provide a better method and system for controlling and driving matching improvements in the fleet.

Proceedings Article | 23 March 2009 Paper

Product-driven material characterization for improved scatterometry time-to-solution

Alok Vaid, Carsten Hartig, Matthew Sendelbach, Cornel Bozdog, Hyang Kyun Kim, Michael Sendler, Yoel Cohen, Victor Kucherov, Boaz Brill, Stanislav Stepanov

Proceedings Volume 7272, 72720V (2009) https://doi.org/10.1117/12.814380

KEYWORDS: Scatterometry, Material characterization, Optical properties, Semiconducting wafers, Metals, Critical dimension metrology, Etching, Silicon, Metrology, Wafer-level optics

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Proceedings Article | 22 March 2008 Paper

Assessing scatterometry for measuring advanced spacer structures with embedded SiGe

Matthew Sendelbach, Shahin Zangooie, Alok Vaid, Pedro Herrera, Jingmin Leng, InKyo Kim

Proceedings Volume 6922, 69220R (2008) https://doi.org/10.1117/12.774823

KEYWORDS: Transmission electron microscopy, Semiconducting wafers, Deep ultraviolet, Single crystal X-ray diffraction, Ultraviolet radiation, Oxides, Scatterometry, UV optics, Metrology, Scatter measurement

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Proceedings Article | 22 March 2008 Paper

Characterization of 32nm node BEOL grating structures using scatterometry

Shahin Zangooie, Matthew Sendelbach, Matthew Angyal, Charles Archie, Alok Vaid, Itty Matthew, Pedro Herrera

Proceedings Volume 6922, 69220S (2008) https://doi.org/10.1117/12.773088

KEYWORDS: Copper, Scatterometry, Back end of line, Metals, Critical dimension metrology, Semiconducting wafers, Chemical mechanical planarization, Metrology, Inspection, Dielectrics

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Proceedings Article | 22 March 2008 Paper

Scatterometry as technology enabler for embedded SiGe process

Alok Vaid, Rohit Pal, Matthew Sendelbach, Shahin Zangooie, Kevin Lensing, Carsten Hartig

Proceedings Volume 6922, 69220U (2008) https://doi.org/10.1117/12.774564

KEYWORDS: Scatterometry, Metrology, Semiconducting wafers, Transmission electron microscopy, Scatter measurement, Etching, Diffractive optical elements, Silicon, Process control, Germanium

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Proceedings Article | 6 April 2007 Paper

Enabling gate etch process development using scatterometry

Jophy Koshy, Matthew Sendelbach, Pedro Herrera

Proceedings Volume 6518, 65184X (2007) https://doi.org/10.1117/12.716723

KEYWORDS: Scatterometry, Scatter measurement, Semiconducting wafers, Etching, Metrology, Calibration, Critical dimension metrology, Plasma etching, Error analysis, Oxides

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Proceedings Article | 5 April 2007 Paper

Characterization of capacitive 3D deep trench mask open structures using scatterometry

Shahin Zangooie, Pedro Herrera, Abebe Mesfin, Chas Archie, Matthew Sendelbach

Proceedings Volume 6518, 651827 (2007) https://doi.org/10.1117/12.712763

KEYWORDS: Scatterometry, Silicon, Metrology, Semiconducting wafers, Critical dimension metrology, Photomasks, 3D metrology, Scatter measurement, Scanning electron microscopy, Etching

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Proceedings Article | 5 April 2007 Paper

Predicting electrical measurements by applying scatterometry to complex spacer structures

Matthew Sendelbach, Javier Ayala, Pedro Herrera

Proceedings Volume 6518, 651825 (2007) https://doi.org/10.1117/12.714870

KEYWORDS: Scatterometry, Error analysis, Scatter measurement, Resistance, Semiconducting wafers, Oxides, Transistors, Picosecond phenomena, Data modeling, Control systems

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Proceedings Article | 24 March 2006 Paper

Integrated scatterometry in high-volume manufacturing for polysilicon gate etch control

Matthew Sendelbach, Andres Munoz, Kenneth Bandy, Dan Prager, Merritt Funk

Proceedings Volume 6152, 61520F (2006) https://doi.org/10.1117/12.659946

KEYWORDS: Semiconducting wafers, Scatterometry, Etching, Scatter measurement, Control systems, Process control, Metrology, Error analysis, Critical dimension metrology, Feedback control

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Proceedings Article | 10 May 2005 Paper

Comparison of scatterometry, atomic force microscope, dual beam system, and XSEM to measure etched via depths

Matthew Sendelbach, Dmitriy Shneyder, Wei Lu, Kevin Boyd

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600737

KEYWORDS: Atomic force microscopy, Semiconducting wafers, Metrology, Scatterometry, Etching, Critical dimension metrology, Error analysis, Composites, Atomic force microscope, Optical testing

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Proceedings Article | 10 May 2005 Paper

Improving STI etch process development by replacing XSEM metrology with scatterometry

Matthew Sendelbach, Andres Munoz, Pedro Herrera

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600880

KEYWORDS: Silicon, Scatterometry, Calibration, Etching, Scatter measurement, Semiconducting wafers, Metrology, Critical dimension metrology, Laser induced breakdown spectroscopy, Error analysis

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Proceedings Article | 24 May 2004 Paper

Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology

Bill Banke, Charles Archie, Matthew Sendelbach, Jim Robert, James Slinkman, Phil Kaszuba, Rick Kontra, Mick DeVries, Eric Solecky

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.546880

KEYWORDS: Metrology, Transmission electron microscopy, Calibration, Error analysis, Atomic force microscopy, Scatterometry, Manufacturing, Capacitance, Statistical analysis, Scanning electron microscopy

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Perhaps never before in semiconductor microlithography has there been such an interest in the accuracy of measurement. This interest places new demands on our in-line metrology systems as well as the supporting metrology for verification. This also puts a burden on the users and suppliers of new measurement tools, which both challenge and complement existing manufacturing metrology. The metrology community needs to respond to these challenges by using new methods to assess the fab metrologies. An important part of this assessment process is the ability to obtain accepted reference measurements as a way of determining the accuracy and Total Measurement Uncertainty (TMU) of an in-line critical dimension (CD). In this paper, CD can mean any critical dimension including, for example, such measures as feature height or sidewall angle. This paper describes the trade-offs of in-line metrology systems as well as the limitations of Reference Measurement Systems (RMS). Many factors influence each application such as feature shape, material properties, proximity, sampling, and critical dimension. These factors, along with the metrology probe size, interaction volume, and probe type such as e-beam, optical beam, and mechanical probe, are considered. As the size of features shrinks below 100nm some of the stalwarts of reference metrology come into question, such as the electrically determined transistor gate length. The concept of the RMS is expanded to show how multiple metrologies are needed to achieve the right balance of accuracy and sampling. This is also demonstrated for manufacturing metrology. Various comparisons of CDSEM, scatterometry, AFM, cross section SEM, electrically determined CDs, and TEM are shown. An example is given which demonstrates the importance in obtaining TMU by balancing accuracy and precision for selecting manufacturing measurement strategy and optimizing manufacturing metrology. It is also demonstrated how the necessary supporting metrology will bring together formerly unlinked technology fields requiring new measurement science. The emphasis on accuracy will increase the importance and role of NIST and similar metrology organizations in supporting the semiconductor industry in this effort.

Proceedings Article | 24 May 2004 Paper

Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control

Matthew Sendelbach, Wesley Natzle, Charles Archie, Bill Banke, Dan Prager, Dan Engelhard, Jason Ferns, Asao Yamashita, Merritt Funk, Fumihiko Higuchi, Masayuki Tomoyasu

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.537969

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Calibration, Metrology, Control systems, Photomasks, Silver, Error analysis, Silicon

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Proceedings Article | 24 May 2004 Paper

Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis

Matthew Sendelbach, Charles Archie, Bill Banke, Jason Mayer, Hideaki Nii, Pedro Herrera, Matt Hankinson

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.538009

KEYWORDS: Scatterometry, Semiconducting wafers, Scatter measurement, Scanning electron microscopy, Critical dimension metrology, Metrology, Manufacturing, Electrodes, Data modeling, Capacitance

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Proceedings Article | 2 June 2003 Paper

Scatterometry measurement precision and accuracy below 70 nm

Matthew Sendelbach, Charles Archie

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.488117

KEYWORDS: Semiconducting wafers, Scatterometry, Transmission electron microscopy, Metrology, Scatter measurement, Calibration, Etching, Composites, Precision measurement, Critical dimension metrology

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Scatterometry is a contender for various measurement applications where structure widths and heights can be significantly smaller than 70 nm within one or two ITRS generations. For example, feedforward process control in the post-lithography transistor gate formation is being actively pursued by a number of RIE tool manufacturers. Several commercial forms of scatterometry are available or under development which promise to provide satisfactory performance in this regime. Scatterometry, as commercially practiced today, involves analyzing the zeroth order reflected light from a grating of lines. Normal incidence spectroscopic reflectometry, 2-theta fixed-wavelength ellipsometry, and spectroscopic ellipsometry are among the optical techniques, while library based spectra matching and realtime regression are among the analysis techniques. All these commercial forms will find accurate and precise measurement a challenge when the material constituting the critical structure approaches a very small volume. Equally challenging is executing an evaluation methodology that first determines the true properties (critical dimensions and materials) of semiconductor wafer artifacts and then compares measurement performance of several scatterometers. How well do scatterometers track process induced changes in bottom CD and sidewall profile? This paper introduces a general 3D metrology assessment methodology and reports upon work involving sub-70 nm structures and several scatterometers. The methodology combines results from multiple metrologies (CD-SEM, CD-AFM, TEM, and XSEM) to form a Reference Measurement System (RMS). The methodology determines how well the scatterometry measurement tracks critical structure changes even in the presence of other noncritical changes that take place at the same time; these are key components of accuracy. Because the assessment rewards scatterometers that measure with good precision (reproducibility) and good accuracy, the most precise scatterometer is not necessarily the best.