Mr. Martin Drapeau Profile

Martin Drapeau

Corporate Application Engineer at Synopsys Inc

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Publications (10)

Proceedings Article | 17 October 2008 Paper

Automated OPC model collection, cleaning, and calibration flow

Martin Drapeau, Brian Ward, Brad Falch

Proceedings Volume 7122, 71221O (2008) https://doi.org/10.1117/12.801525

KEYWORDS: Calibration, Data modeling, Optical proximity correction, Metrology, Scanning electron microscopy, Semiconducting wafers, Optical alignment, Photomasks, Data conversion, Nomenclature

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Proceedings Article | 19 May 2008 Paper

OPC model enhancement using parameter sensitivity methodology

Brian Ward, Martin Drapeau

Proceedings Volume 7028, 70280N (2008) https://doi.org/10.1117/12.793030

KEYWORDS: Data modeling, Picosecond phenomena, Calibration, Optimization (mathematics), Optical proximity correction, Performance modeling, Statistical modeling, Process modeling, Logic, Metrology

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Proceedings Article | 19 March 2008 Paper

Decomposition difficulty analysis for double patterning and the impact on photomask manufacturability

Yuichi Inazuki, Nobuhito Toyama, Takaharu Nagai, Takanori Sutou, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Martin Drapeau, Kevin Lucas, Chris Cork

Proceedings Volume 6925, 69251O (2008) https://doi.org/10.1117/12.773291

KEYWORDS: Inspection, Photomasks, Double patterning technology, Optical proximity correction, Lithography, Printing, Lithographic illumination, Binary data, Critical dimension metrology, Logic

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Proceedings Article | 27 March 2007 Paper

Patterning control budgets for the 32-nm generation incorporating lithography, design, and RET variations

Kevin Lucas, Chris Cork, Jonathan Cobb, Brian Ward, Martin Drapeau, Charlie Zhang, John Allgair, Mike Kling, Mike Rieger

Proceedings Volume 6520, 65200N (2007) https://doi.org/10.1117/12.715166

KEYWORDS: Optical lithography, Optical proximity correction, Error analysis, Resolution enhancement technologies, SRAF, Lithography, OLE for process control, Photomasks, Manufacturing, Metrology

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An important outcome of the 90nm and 65nm device generations was the realization that new methods for predicting and controlling patterning were required to ensure successful transfer for all design rule compliant features through the required process window. This realization led to a strong increase in the use of CD-based and process window aware post-optical proximity correction (OPC) verification in production mask tapeouts. Accurate post-OPC verification is a necessity but many patterning issues could have been detected and removed earlier in the product development lifecycle. Of course, the 45nm and 32nm device generations are only expected to further strain the ability of device manufacturers to predict process control requirements, robust patterning design rules and first-time right reticle enhancement technology (RET) recipes. Therefore, improvements to the traditional process, OPC and design rule prediction/evaluation steps are needed. In this paper we propose a patterning and CD control prediction methodology which incorporates not only the traditional dose, defocus and mask variation parameters but also implements RET parameter variations such as layout edge discretization, model inaccuracy, metrology error and assist feature placement. This methodology allows a more accurate prediction of process control requirements, worst case CD control layout geometries and RET subsystem accuracy/control requirements. Lithography engineers have long operated with specific (if not always fully understood) dose and focus control success requirements. To efficiently determine real worst design situations, we utilize a new methodology for quickly verifying the RET-ability of a lithography process + design rule set + OPC correction recipe based on coupling iterative layout generation with OPC testing. Our aim in this paper is to provide additional engineering rigor to the traditional experience-based OPC success requirements by looking at the total Litho + RET + metrology patterning problem and analyzing the individual component control needs.

Proceedings Article | 21 March 2007 Paper

Double patterning design split implementation and validation for the 32nm node

Martin Drapeau, Vincent Wiaux, Eric Hendrickx, Staf Verhaegen, Takahiro Machida

Proceedings Volume 6521, 652109 (2007) https://doi.org/10.1117/12.712139

KEYWORDS: Double patterning technology, Optical lithography, Process control, Lithography, Logic, Optical proximity correction, Photomasks, Etching, Image processing, Immersion lithography

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Proceedings Article | 20 October 2006 Paper

Identification of subresolution assist features that are susceptible to imaging through process

Lawrence Melvin, Martin Drapeau, Jensheng Huang

Proceedings Volume 6349, 63491Q (2006) https://doi.org/10.1117/12.692464

KEYWORDS: SRAF, Semiconducting wafers, Data modeling, Printing, Process modeling, Photoresist materials, Etching, Critical dimension metrology, Image processing, Optical proximity correction

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Proceedings Article | 20 October 2006 Paper

Accounting for lens aberrations in OPC model calibration

Laurent Depre, Christopher Cork, Martin Drapeau

Proceedings Volume 6349, 63494L (2006) https://doi.org/10.1117/12.686044

KEYWORDS: Calibration, Monochromatic aberrations, Scanners, Optical proximity correction, Data modeling, Reticles, Semiconducting wafers, Critical dimension metrology, Photomasks, Statistical modeling

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Proceedings Article | 20 October 2006 Paper

Combined resist and etch modeling and correction for the 45-nm node

Martin Drapeau, Dan Beale

Proceedings Volume 6349, 634921 (2006) https://doi.org/10.1117/12.693080

KEYWORDS: Etching, Optical calibration, Calibration, Scanning electron microscopy, Photomasks, Silicon, Optical proximity correction, Logic, Model-based design, Photoresist processing

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Proceedings Article | 20 May 2006 Paper

Resist and etch modeling for the 45nm node

Martin Drapeau, Dan Beale

Proceedings Volume 6283, 628334 (2006) https://doi.org/10.1117/12.681822

KEYWORDS: Etching, Scanning electron microscopy, Calibration, Data modeling, Optical proximity correction, Model-based design, Semiconducting wafers, Metrology, Photoresist processing, Plasma etching

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Proceedings Article | 5 November 2005 Paper

A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

Martin Drapeau, Paul J. van Adrichem, Lieve van Look, Bryan Kasprowicz

Proceedings Volume 5992, 59921T (2005) https://doi.org/10.1117/12.632040

KEYWORDS: 3D modeling, Etching, Phase shifts, Photomasks, Optical proximity correction, Semiconducting wafers, Calibration, Light scattering, Critical dimension metrology, Resolution enhancement technologies

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Showing 5 of 10 publications

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