For almost a decade Nanomachining application has been studied and developed to repair next generation of
photomasks. This technique, based on Atomic Force Microscopy (AFM), applies a mechanical removing of the defects
with almost negligible quartz-damage, high accuracy of the edge-placement and without spurious depositions (stain,
implanted elements, etc.) that may affect the optical transmission. SII NanoTechnology Inc. (SIINT) is carrying out a
joint-development project with DNP Photomask Europe S.p.A. (DPE) that has allowed the installation in DPE of the
next generation state-of-the-art AFM based system SPR6300 to meet the repair specifications for the 65 nm Node.
Drift phenomena of the AFM probe represent one of the major obstacles for whichever kind of nano-manipulation
(imaging and material or pattern modification). AFM drift undermines the repeatability and accuracy performances of
the process. The repair methodology, called NewDLock, implemented on SPR6300, is a semi-automated procedure by
which the drift amount, regardless of its origin, is estimated in advance and compensated during the process. Now AFM
Nanomachining approach is going to reveal properties of repeatability and user-friendly utilization that make it suitable
for the production environment.
Various material and functional properties have been measured in lithium niobate crystals (LiNbO3) with different compositions, starting from conventional congruent composition, up to off-congruent and quasi-stoichiometric ones. The UV absorption edge has been measured and correlated with the crystal composition, showing the edge shift towards shorter wavelengths. The ferroelectric transition Curie temperatures have been determined by differential scanning calorimetry, and it increases with Li2O content in the crystal. The surface composition has been checked by micro-Raman spectroscopy. A narrowing of the linewidths has been observed for quasi-stoichiometric crystal, showing an ordered structure, if compared with congruent composition. The coercive field has been measured as a function of temperature for two different crystal compositions, and it has been found lower in the off-congruent substrate. The Ti-indiffusion process has been studied and compared in congruent and off-congruent LiNbO3 substrates by secondary ion mass spectrometry. The main diffusion process parameters have been determined. The Ti diffusion process has been found considerably slower in off-congruent substrates, if compared with conventional congruent LiNbO3, and resulted almost isotropic. The Li-outdiffusion phenomenon has been observed and correlated wit the Ti concentration profile. A careful control on LiNbO3 composition and material properties allows one to find the proper compositional window for the realization of various advanced optical and electro-optical devices.
In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices.
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