KEYWORDS: Lithography, Zirconium, Atomic force microscopy, Metals, Coating, Image processing, Electron beam lithography, Oxides, Atomic force microscope, Line edge roughness
New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM)
lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium
phosphonate system are newly synthesized for spin-coatable materials in aqueous solutions and leads to negative tone
pattern for improving line edge roughness. Low electron exposure by AFM lithography could generate a pattern by
electrochemical reaction and cross-linking of metal-oxo complexes. It has been reported that the minimum pattern results
are affected by lithographic speed, and the applied voltage between a tip and a substrate.
As the design rule has decreased in semiconductor manufacturing, the ITRS roadmap requires significantly tighter
critical dimension control. Especially, CD error caused by develop loading become significant in the overall error
budget and has approached to over 5nm. It is very difficult to control dissolution product making the change of
dissolution rate by chemical flow direction in develop process.
These days, the study of develop loading within global area has significantly progressed. However, we will focus on CD
error in mid-local area by using a detailed analysis. And we evaluate these phenomenon caused by pattern density
difference, called chemical flare. Even though using several developer types, CD error appears at the chip to chip
boundary. It is impossible to correct CD error in this area by electron beam correction. Therefore, this paper analyzed
about CD error in a value of several tens ~ hundreds nm. In view of develop loading, we will optimize develop process
for improvement of CD error.
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