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Manish Sharma
Research Assistant
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Publications (1)
Proceedings Article | 31 August 2017 Paper
Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy
Proceedings Volume 10354, 103540F (2017) https://doi.org/10.1117/12.2274669
KEYWORDS: Molecular beam epitaxy, Electron beam lithography, Gallium arsenide, Finite-difference time-domain method, Silicon, Optical components, Control systems, Gallium, Light emitting diodes, Absorption
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