In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
We report a type-II interband cascade laser grown on an on-axis silicon substrate. We demonstrate continuous-wave lasing operation at temperatures up to 50°C at 3.5µm with a threshold current of 45 mA at room temperature and 20 mW/facet output power. We extrapolate a mean time to failure of at least 300,000 h, which we attribute to the design of the active region eliminating the non-radiative recombination process.
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on GaSb-based laser diodes (LDs) and InAs/AlSb quantum-cascade lasers (QCLs), grown on on-axis (001) Si substrates by molecular-beam epitaxy, and covering emission wavelengths from 2 to 10 µm. Threshold current densities well below 1 kA.cm-2 are achieved in both cases. Ridge LDs operate cw up to 80 °C and emit around 10 mW at room temperature whereas QCLs exhibit performances comparable to their counterpart grown on native InAs substrates. In addition, we will demonstrate that etching facets is a viable route toward cavity definition.
The monolithic integration of III-V semiconductors on on-axis silicon is currently under active consideration. In this work we propose a novel epitaxial procedure to grow high quality, anti-phase boundary free GaSb layers on on-axis Si. Broad-area laser diodes based on AlGaAsSb/GaInAsSb QWs exhibit threshold current densities lower than 1 kA.cm-2 whereas narrow-ridge lasers operate cw above room temperature. Our results open the way to the epitaxial integration of a variety of IR lasers on on-axis Si.
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