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Modeling tools for use of displacement Talbot lithography for high volume AR waveguide manufacturing
Preliminary studies show that mask absorber sidewall angle (SWA) impacts pattern formation partially through aerial image asymmetries. The light and dark-side of the absorbers form a standing wave in the gap between them due to absorber side wall reflection and corner scattering. The absorbers’ standing waves further interact with the standing waves from the mask stack. Optimizing the absorber SWA is hypothesized to improve contrast thereby improving patterning robustness.
This study investigated the impact of absorber SWA on aerial image shape using simulation. The study was designed to understand if an optimal SWWA exists that improves patterning robustness in a manufacturing environment. CD, contrast, focus response, and other data were gathered and presented to understand the impact of SWA on patterning. From these simulated data, the possibility of an optimum SWA was explored.
Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias
This study explores the relationship between EUV mask stack reflectivity and horizontal to vertical pattern bias. In this computational study, the MoSi2 thickness is varied at systematic locations in the mask stack, then data on horizontal to vertical bias (H to V bias) for multiple features are gathered. The data will be used to understand the relationship between mask substrate reflectance, mask material thickness, and H to V bias. The study will also investigate the impact of high numerical aperture (0.55 NA anamorphic) imaging on the final H to V bias. Initial work indicates that a 1% variation in substrate reflectance results in approximately a 4% variation in CD.
The present study continues beyond the initial work to better understand the interaction between source errors and OPC. In this case, partial transmission and zero transmission errors are introduced into the study. The initial study found a CD bias and extra CD variation when the error was located in the transmissive area for the source error case. As the result of a previous study, these effects are thought to be due to scattered background illumination and pattern shift, respectively. These effects were not as readily observed in the mask error case. This study looks at the interaction of different errors in the source during both exposure and OPC generation to better understand the effects of source errors on the final pattern.
A resulting analysis of study is presented. The analysis explains whether scattered background illumination and pattern shift are the mechanisms of the source effects. This can be concluded if the same effects can be generated in the mask error case using various source errors. The software methodology used to execute these studies is presented in detail.
This study is a continuation of the previous work of source imperfection impacts on optical proximity correction to better understand the interaction between source defects and pattern shift during mask synthesis. Two variations of the study are executed: the first variation is the mask error case where random intensity variations are introduced in the pixelated source and an OPC model is created, then the corrected pattern is imaged with an ideal source. The second variation is the exposure error case where the OPC correction is performed with an ideal source, then exposed with a random defect in the manufacturing source. For both cases a pixel transmission variation is introduced in pixelated source using 11 various pixel selection methodology. Each experiment for the mask and exposure defects are conducted five times. This aims to quantify the effects on pattern uniformity while assuming defects in source manufacturing. This also allows you to better understand the limitation of scanner systems that might not be able to 100% represent the source pixels that were created during an aggressive Source Mask Optimization (SMO) session. Detailed analysis and studies are conducted to quantify the source defects impact on pattern formation.
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