Dr. Kuang-Jung Chen Profile

Dr. Kuang-Jung Chen

at GlobalFoundries

SPIE Involvement:

Author

Publications (32)

Proceedings Article | 16 April 2013 Paper

Paper

Development of KrF hybrid resist for a dual-isolation application

Sen Liu, Steven Holmes, Kuang Jung Chen, Wu-song Huang, Ranee Kwong, Greg Breyta, Bruce Doris, Kangguo Cheng, Scott Luning, Maud Vinet, Laurent Grenouillet, Qing Liu, Matt Colburn, Chung-Hsi Wu

Proceedings Volume 8682, 86820T (2013) https://doi.org/10.1117/12.2011515

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Silicon, Reactive ion etching, Polymers, Lithographic illumination, Photoresist processing, Chemistry, Photoresist developing

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Proceedings Article | 19 March 2012 Paper

Paper

Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials

Sen Liu, Kuang-Jung Chen, Wu-Song Huang, Steven Holmes, Karen Huang, Nicolette Fender, Ranee Kwong, Brian Osborn, Cherry Tang, Chung-Hsi Wu, Mark Slezak

Proceedings Volume 8325, 83251B (2012) https://doi.org/10.1117/12.916158

KEYWORDS: Polymers, Reflectivity, Silicon, Semiconducting wafers, Bottom antireflective coatings, Lithography, Chromophores, Critical dimension metrology, Silicon films, Solids

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Proceedings Article | 16 April 2011 Paper

Paper

Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Proceedings Volume 7972, 79720G (2011) https://doi.org/10.1117/12.881489

KEYWORDS: Photoresist processing, Reactive ion etching, Lithography, Photomasks, Dielectrics, Etching, Scanning electron microscopy, Double patterning technology, Semiconductors, Optical lithography

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Proceedings Article | 30 March 2010 Paper

Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain

Stefan Harrer, John Arnold, Dario Goldfarb, Steven Holmes, Rex Chen, Cherry Tang, Mark Slezak, Nicolette Fender, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Shyng-Tsong Chen, Dave Horak, Yunpeng Yin, Rao Varanasi, Matthew Colburn

Proceedings Volume 7639, 763919 (2010) https://doi.org/10.1117/12.846593

KEYWORDS: Back end of line, Dielectrics, Etching, Lithography, Reactive ion etching, Photoresist materials, Optical lithography, Semiconducting wafers, Copper, Polishing

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A novel back-end-of-line (BEOL) patterning and integration process termed Multi-Level Multiple Exposure (MLME) technique is herein introduced. The MLME technique simplifies BEOL dual damascene (DD) integration while simultaneously being applicable to all BEOL levels. It offers a patterning resolution reaching into the sub-100nm region and improves semiconductor manufacturing cost and throughput. MLME employs a dual-layer imaging stack (via + trench resists) cast onto a customized etch transfer multilayer stack. This process implements a strict litho-litho-etch sequence for transferring the trench- and via-patterns into the dielectric layer. Under the MLME scheme, two imaging steps (i.e. via- and trench-level patterning) are executed consecutively followed by a dry etch process that transfers the lithographically-formed patterns into the customized etch transfer multilayer stack and further into the dielectric layer. The MLME integration scheme not only decreases the number of overall process steps for the full DD BEOL process but also eliminates several inter-tool wafer exchange sequences as performed in a conventional litho-etch-litho-etch process flow. All MLME process steps were demonstrated i.e. combined 193nm-dry dual-resist layer MLME via- and trench-lithography, full pattern transfer of via- and trench-patterns into the dielectric layer using reactive ion etching (RIE), as well as electroplating and polishing of the DD patterns. This paper provides a detailed description of both post-lithography steps of the DD process for a DD BEOL structure, i.e. (i) the RIE-pattern transfer process with the customized multilayer stack, and (ii) the metallization process completing the DD process for one BEOL layer. Furthermore, the integration capabilities of the MLME technique were demonstrated and characterized by generating an electrically functional via-chain connecting two neighboring BEOL layers fabricated by subsequently applying the MLME approach to both layers. An exhaustive description and evaluation of MLME lithographic patterning is given in an accompanying paper.

Proceedings Article | 26 March 2010 Paper

Paper

Process characterization of pitch-split resist materials for application at 16nm node

Steven Holmes, Cherry Tang, John Arnold, Yunpeng Yin, Rex Chen, Nicolette Fender, Brian Osborn, Gary Dabbagh, Sen Liu, Matthew Colburn, Rao Varanasi, Mark Slezak

Proceedings Volume 7639, 76392X (2010) https://doi.org/10.1117/12.846891

KEYWORDS: Lithography, Photoresist processing, Semiconducting wafers, Double patterning technology, Semiconductors, Photomasks, Reactive ion etching, Silicon, Scanning electron microscopy, Particles

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Proceedings Article | 26 March 2010 Paper

Paper

A silicon-containing resist for immersion lithography

Ratnam Sooriyakumaran, Wu-Song Huang, Sally Swanson, Hoa Truong, Phillip Brock, Alexander Friz, Kuang-Jung Chen, Robert Allen

Proceedings Volume 7639, 76390F (2010) https://doi.org/10.1117/12.846280

KEYWORDS: Silicon, Polymers, Immersion lithography, Etching, Lithography, Photoresist materials, Reactive ion etching, Anisotropic etching, Silicon films, Multilayers

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Proceedings Article | 26 March 2010 Paper

Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning

Dario Goldfarb, Stefan Harrer, John Arnold, Steven Holmes, Rex Chen, Cherry Tang, Nicolette Fender, Mark Slezak, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Roa Varanasi, Matthew Colburn

Proceedings Volume 7639, 76390I (2010) https://doi.org/10.1117/12.846443

KEYWORDS: Optical lithography, Einsteinium, Back end of line, Etching, Dielectrics, Semiconducting wafers, Lithography, Photoresist materials, Nanoimprint lithography, Reactive ion etching

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Proceedings Article | 1 April 2009 Paper

Paper

Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes

Steven Holmes, Chiew-Seng Koay, Karen Petrillo, Kuang-Jung Chen, Matthew Colburn, Jason Cantone, Kenichi Ueda, Andrew Metz, Shannon Dunn, Youri van Dommelen, Michael Crouse, Judy Galloway, Emil Schmitt-Weaver, Aiquin Jiang, Robert Routh, Cherry Tang, Mark Slezak, Sumanth Kini, Tony DiBiase

Proceedings Volume 7273, 727305 (2009) https://doi.org/10.1117/12.828483

KEYWORDS: Overlay metrology, Semiconducting wafers, Double patterning technology, Lithography, Semiconductors, Defect inspection, Scanning electron microscopy, Logic, Polymers, Photomasks

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Proceedings Article | 15 April 2008 Paper

Paper

A new class of low bake resists for 193-nm immersion lithography

Ratnam Sooriyakumaran, Richard DiPietro, Hoa Truong, Phillip Brock, Robert Allen, Luisa Bozano, Irene Popova, Wu-Song Huang, Rex Chen, Mahmoud Khojasteh, Pushkara Rao Varanasi

Proceedings Volume 6923, 69230C (2008) https://doi.org/10.1117/12.772947

KEYWORDS: Polymers, Immersion lithography, Diffusion, Image processing, 193nm lithography, Lithography, Chemically amplified resists, Humidity, Photoresist processing, Standards development

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Proceedings Article | 26 March 2008 Paper

Paper

Resist freezing process for double exposure lithography

Kuang-Jung Rex Chen, Wu-Song Huang, Wai-Kin Li, P. Rao Varanasi

Proceedings Volume 6923, 69230G (2008) https://doi.org/10.1117/12.772852

KEYWORDS: Polymers, Semiconducting wafers, Distortion, Photoresist processing, Polymer thin films, Lithography, Prototyping, Image processing, Temperature metrology, Switches

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Proceedings Article | 23 March 2007 Paper

Paper

High-performance 193-nm photoresists based on fluorosulfonamide

Wenjie Li, Kuang-Jung Chen, Ranee Kwong, Margaret Lawson, Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Tsutomu Shimokawa, Yoshikazu Yamaguchi, Shiro Kusumoto, Makoto Sugiura, Takanori Kawakami, Mark Slezak, Gary Dabbagh, Zhi Liu

Proceedings Volume 6519, 65190F (2007) https://doi.org/10.1117/12.712231

KEYWORDS: Polymers, Etching, Fluorine, Resistance, Lithography, Immersion lithography, 193nm lithography, Chemical species, Photoresist materials, Lithographic illumination

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Proceedings Article | 4 May 2005 Paper

Paper

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers

Pushkara Varanasi, Ranee Kwong, Mahmoud Khojasteh, Kaushal Patel, Kuang-Jung Chen, Wenjie Li, M. Lawson, Robert Allen, Ratnam Sooriyakumaran, P. Brock, Linda Sundberg, Mark Slezak, Gary Dabbagh, Z. Liu, Yukio Nishimura, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599700

KEYWORDS: Polymers, 193nm lithography, Lithography, Etching, Photoresist materials, Fluorine, Immersion lithography, Modulation, Photomasks, Reactive ion etching

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Proceedings Article | 4 May 2005 Paper

Paper

Line edge roughness reduction by plasma curing photoresists

Arpan Mahorowala, Kuang-Jung Chen, Ratnam Sooriyakumaran, Aleksandra Clancy, Dakshi Murthy, Stacy Rasgon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600043

KEYWORDS: Photoresist materials, Plasma, Etching, Line edge roughness, Polymers, Surface roughness, Polymer thin films, Semiconducting wafers, Atomic force microscopy, FT-IR spectroscopy

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Proceedings Article | 4 May 2005 Paper

Paper

A new long range proximity effect in chemically amplified photoresist processes: chemical flare

Timothy Brunner, Z. Chen, Kuang-Jung Chen, S. Scheer

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598822

KEYWORDS: Photoresist processing, Photomasks, Semiconducting wafers, Image processing, Critical dimension metrology, Chemical reactions, Lithography, Optical proximity correction, Atomic force microscopy, Photoresist materials

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Proceedings Article | 4 May 2005 Paper

Paper

Progress toward developing high performance immersion compatible materials and processes

Karen Petrillo, Kaushal Patel, Rex Chen, Wenjie Li, Ranee Kwong, Peggy Lawson, Rao Varanasi, Chris Robinson, Steven Holmes, Dario Gil, Kurt Kimmel, Mark Slezak, Gary Dabbagh, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601621

KEYWORDS: Polymers, Lithography, Immersion lithography, Materials processing, Semiconducting wafers, Particles, Photoresist materials, Image processing, Photoresist processing, Scanners

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Proceedings Article | 12 June 2003 Paper

Paper

Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa Truong, Robert Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485100

KEYWORDS: Polymers, Etching, Lithography, Resistance, Fluorine, Surface roughness, Dry etching, Semiconducting wafers, 193nm lithography, Polymer thin films

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Proceedings Article | 12 June 2003 Paper

Paper

High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester functionalities

Mahmoud Khojasteh, K. Rex Chen, Ranee Kwong, Margaret Lawson, Pushkara Varanasi, Kaushal Patel, Eiichi Kobayashi

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485126

KEYWORDS: Polymers, Lithography, Photoresist materials, Polymerization, Photoresist processing, Manufacturing, Logic, Medium wave, Microelectronics, Resistance

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Proceedings Article | 12 June 2003 Paper

Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 24 August 2001 Paper

Paper

ArF resist for contact hole application

K. Rex Chen, Margaret Lawson, Timothy Hughes, William Brunsvold, Pushkara Varanasi, Robin Keller, George Jordhamo

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436910

KEYWORDS: Polymers, Floods, Laser induced plasma spectroscopy, Contamination, Photomasks, Semiconducting wafers, Scanners, Printing, Manufacturing, Microelectronics

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Proceedings Article | 24 August 2001 Paper

Paper

Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement

ChungHsi Wu, Wu-Song Huang, K. Rex Chen, Charles Archie, Mark Lagus

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436848

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Floods, Atomic force microscopy, Polymers, Environmental sensing, Annealing, Critical dimension metrology, Wafer bonding, Photoresist processing

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Proceedings Article | 24 August 2001 Paper

Paper

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Varanasi, G. Jordahamo, Margaret Lawson, R. Chen, William Brunsvold, Wenjie Li, Robert Allen, Hiroshi Ito, Hoa Truong, Thomas Wallow

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436833

KEYWORDS: Etching, Monochromatic aberrations, Chemistry, Polymers, Lithography, Polymerization, Resistance, Imaging systems, Surface roughness, Transparency

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Proceedings Article | 23 June 2000 Paper

Paper

Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Varanasi, George Jordhamo, Margaret Lawson, K. Rex Chen, William Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert Allen, Hiroshi Ito, Juliann Opitz, Hoa Truong, Thomas Wallow

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388280

KEYWORDS: Polymers, Etching, Lithography, Reactive ion etching, Surface roughness, Photomasks, 193nm lithography, Phase shifts, Deep ultraviolet, Photoresist materials

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Proceedings Article | 23 June 2000 Paper

Paper

Defect printing issues with high-contrast chemically amplified resists

Zhijian Lu, Wayne Moreau, Xiaoming Yin, K. Rex Chen, Alan Thomas, Peggy Lawson, George Jordhamo, ChungHsi Wu

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388284

KEYWORDS: Polymers, Printing, Semiconducting wafers, Floods, Photomasks, Chemically amplified resists, Etching, Inspection, Sulfur, Microelectronics

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Proceedings Article | 11 June 1999 Paper

Paper

Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution

Steven Holmes, Toshiharu Furukawa, Mark Hakey, David Horak, Paul Rabidoux, K. Rex Chen, Wu-Song Huang, Mahmoud Khojasteh, Niranjan Patel

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350218

KEYWORDS: Reticles, Lithography, Deep ultraviolet, Photomasks, Non-optical lithography, Image processing, Logic, Phase shifts, Chlorine, Image resolution

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Proceedings Article | 11 June 1999 Paper

Paper

Correlations between dissolution data and lithography of various resists

Ronald DellaGuardia, Wu-Song Huang, K. Rex Chen, Doris Kang

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350215

KEYWORDS: Polymers, Lithography, Data modeling, Absorbance, Deep ultraviolet, Modeling, Photography, Systems modeling, Photoresist materials, Semiconductors

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Proceedings Article | 11 June 1999 Paper

Paper

Selection of attenuated phase shift mask compatible contact hole resists for KrF optical lithography

Zhijian Lu, Yuping Cui, Alan Thomas, Scott Mansfield, Gerhard Kunkel, David Dobuzinsky, Franz Zach, Daniel Liu, K. Rex Chen, George Jordhamo, Alois Gutmann, Timothy Farrell

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350280

KEYWORDS: Printing, Etching, Photomasks, Oxides, Phase shifts, Lithography, Optical lithography, Optical properties, Electroluminescence, Resistance

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Proceedings Article | 29 June 1998 Paper

Paper

Acid diffusion in a chemically amplified negative i-line photoresist

Judy Connolly, K. Rex Chen, Ranee Kwong, Margaret Lawson, Leo Linehan, Wayne Moreau

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312474

KEYWORDS: Diffusion, Photoresist materials, Oxides, Photoresist processing, Semiconducting wafers, Temperature metrology, Critical dimension metrology, Manufacturing, Photochemistry, Image quality

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Proceedings Article | 7 July 1997 Paper

Paper

Structure and property relationships of fractionated novolac resins

K. Rex Chen, Ranee Kwong, George Jordhamo, Robert Allen, Paula Gallagher-Wetmore

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275862

KEYWORDS: Picture Archiving and Communication System, Lithography, Manganese, Carbon, Microfluidics, Standards development, Spectroscopy, Polymers, Photoresist materials, Liquids

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Proceedings Article | 7 July 1997 Paper

Paper

Conducting polyaniline coatings for submicron lithography and SEM metrology

Teresita Graham, Marie Angelopoulos, Bruce Furman, K. Rex Chen, Wayne Moreau

Proceedings Volume 3048, (1997) https://doi.org/10.1117/12.275809

KEYWORDS: Polymers, Scanning electron microscopy, Metrology, Photomasks, Lithography, Photoresist materials, Metals, Photoresist technology, Submicron lithography, Nondestructive evaluation

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Proceedings Article | 14 June 1996 Paper

Paper

Dissolution behavior of novolak resins

K. Rex Chen, George Jordhamo, Wayne Moreau

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241854

KEYWORDS: Polymers, Coating, Silicon, Anisotropy, Distortion, Refractive index, Laser interferometry, Skin, Solids, Interfaces

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Proceedings Article | 14 June 1996 Paper

Paper

Negative-tone resist system using vinyl cyclic acetal crosslinker

Wu-Song Huang, Kim Lee, K. Rex Chen, Dominic Schepis

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241829

KEYWORDS: Polymers, Deep ultraviolet, Chemistry, Lithography, Polymerization, Carbon, Absorption, Photoresist materials, Resistance, FT-IR spectroscopy

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Most high performance negative tone resists are chemically amplified systems. The chemistry involves a creation of acid during photo-exposure and subsequent crosslinking of the polymer matrix during post-exposure bake. The commonly used crosslinkers are epoxies, melamines, benzyl alcohol and benzyl acetates. In light of the high reactivity of vinyl group on vinyl ether type compounds, literature has suggested that photochemical addition reaction of a polymer- bearing pendant vinyl ether with various thiol compounds can potentially be highly sensitive negative-type photoresists. Recently, bis-dihydropyrane derivative has been used for the first time to develop high performance negative tone resists for DUV, E-beam and x-ray applications. A cyclic acetal system based on acetal blocked aromatic aldehyde has also been demonstrated to be a good crosslinker for negative DUV resist. In order to take advantage of the above chemistries, we have investigated a crosslinker, 3,9-divinylspirobi(M-dioxane) (DVSDO), which contains both cyclic acetal groups and vinyl groups. Different loadings of DVSDO from 8% to 17% were formulated in combination with triphenyl sulfonyl triflate and N-sulfonyl triflate derivatives in polyhydroxystyrene matrix. One composition contains 8% N- sulfonyloxy derivative, 12% DVSDO in 20% solid of polyhydroxystyrene has shown resolution to 0.35 micrometer from Canon 0.37 NA DUV stepper. It also shows promising resolution in E-beam lithography. Varying the post apply bake (PAB) temperatures and post exposure bake temperatures (PEB) demonstrate a great dependency of sensitivity to baking temperature. The sensitivity increases with decreasing PAB, while decreases with decreasing PEB. Insufficient baking time (less than 4 - 5 minutes) at lower PEB temperature 90 degrees Celsius causes significant film loss after development in 0.14N TMAH for 60 - 75s. On the other hand, when the PEB temperature is too high (greater than 120 degrees Celsius), the resist's resolution is degraded. Recent literature report has shown that high resolution can be achieved on negative resist system by raising PAB temperature. However, most of the known resist systems cannot tolerate high temperature, due to background crosslinking. The crosslinker, DVSDO, introduced in this paper seems to have higher heat resistance toward thermal induced background crosslinking. The resist formulated here can tolerate 140 degrees Celsius bake without seeing residues on the unexposed area. In this paper, we also discuss some IR studies on the crosslinking mechanism in addition to the lithographic evaluation.

Proceedings Article | 9 June 1995 Paper

Paper

Performance properties of near-monodisperse novolak resins

Robert Allen, K. Rex Chen, Paula Gallagher-Wetmore

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210346

KEYWORDS: Lithography, Polymers, Photoresist materials, Liquids, Carbon dioxide, Distributed interactive simulations, Microfluidics, Solids, Glasses, Standards development

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Showing 5 of 32 publications

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