Nikon has developed a state-of-the-art wafer topography sensor dubbed S-meter-Z, which is based on an optical spectroscopy and novel correction function based on an optical model. The measurement repeatability is roughly 10 nm and has the potential to reach down to a few nm with additional improvements. Processed wafers with lithography patterns often have a complicated surface film structure, which induces the amplitude change and phase shift of the reflected light. This phase shift often causes errors in wafer topography measurement. The S-meter-Z minimizes these errors and provides accurate wafer geometry data for wafer process monitoring, which is essential for manufacturing today’s leading-edge microchip devices.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.