Ms. Julie Tournet Profile

Julie Tournet

PhD candidate at Univ de Montpellier

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Publications (2)

Proceedings Article | 8 March 2019 Presentation

InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation)

Eric Tournié, Hoang Nguyen Van, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Grégoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Roland Teissier, Alexei Baranov

Proceedings Volume 10926, 1092618 (2019) https://doi.org/10.1117/12.2514551

KEYWORDS: Quantum cascade lasers, Silicon, Semiconductor lasers, Indium arsenide, Gallium indium arsenide antimonide phosphide, Quantum wells, Gallium antimonide, Binary data, Semiconductors, Optical alignment

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Sb-based materials rely on the GaSb, InAs, AlSb, InSb binary compounds and their quaternary or pentanary alloys (AlGaAsSb, GaInAsSb, AlGaInAsSb,.. ). This technology exhibits several distinctive properties as compared to other semiconductors: type-I to type-III band alignments, giant band offsets, low effective masses of electrons and holes, direct bandgaps between 0.15 and 1.7 eV. Conventional laser diodes (LDs) rely essentially on GaInAsSb type-I quantum wells (QWs) confined by AlGa(In)AsSb barrier layers. Low threshold currents and high T0 have been demonstrated between 1.5 and 3.4 µm. The AlGaInAsSb pentanary barrier is needed to extend the wavelength beyond 3 µm while keeping a type-I band alignment [3] even though it makes the epitaxial growth complex. Single mode operation has been achieved with both DFB lasers and VCSELs using the same active zone. At longer wavelength, interband cascade lasers (ICLs) based on GaInSb/InAs type-II p-n junctions stacked in series exhibit room temperature cw emission between 3.5 and 5 µm, including single mode operation of DFB lasers. At still longer wavelength InAs/AlSb quantum cascade lasers (QCLs) benefit from the low InAs effective mass and giant conduction band offset. High performance have been demonstrated all the way from 2.6 µm up to 25 µm, particularly at long wavelength which is an asset of this technology. The evolution toward smart, integrated, sensors requires integrating III-V optoelectronic devices with Si-based platforms. The epitaxial growth of III-V compounds on Si has thus been the focus of renewed attention for about a decade now. We have shown that the Si substrate preparation and the III-Sb nucleation on Si are crucial steps. This allowed us demonstrating a variety of epitaxially integrated optoelectronic devices such as laser diodes, photodetectors and the first ever QCL grown on Si. In this presentation we review the recent results obtained on the integration of antimonide-based QCLs epitaxially grown on Si substrates. We will show that this technology is very attractive for future III-V on Si integration, and we will discuss future integration schemes.

Proceedings Article | 16 February 2018 Presentation + Paper

AlInAsSb for GaSb-based multi-junction solar cells

J. Tournet, Y. Rouillard, E. Tournié

Proceedings Volume 10527, 105270A (2018) https://doi.org/10.1117/12.2289791

KEYWORDS: Gallium antimonide, Aluminum, Photovoltaics, Multijunction solar cells, Epitaxy

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