The InAs/InAsSb nBn structure detector without Ga (GA-free) has fewer internal defects, and the barrier blocks majority carrier while allowing the normal transport of photogenerated carriers. The unique structure can effectively suppress the generation-composite current generated by SRH, and achieve low dark current at high operating temperature. In this paper, a mid-infrared Ga-free nBn T2SL detector is investigated. The device exhibited 7.43x10-6 A/cm2 under 0.5 V bias at 127 K. At 120K, the detector achieves quantum efficiency values of 56%, exhibits excellent photoelectric performance.
The band structures of the InAs/GaSb type-Ⅱ superlattice are investigated using the 8-band k.p method. The finite difference method (FDE) is used for solving the Schrödinger equation. It is found that a small variation in the valence band offset (VBO, one of the input parameters) could cause a great change in cut-off wavelength, especially at the long-wavelength range. We also developed a GUI application based on this method. Users could quickly get band structure details, such as bandgap energy, miniband energy, and wavefunctions with this GUI. The program and its code are available at https://github.com/STONEDIY/K.p-Mehtod-for-InAs-GaSb-Superlattice-Band-Structure-Calculation.
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